P. Bonanno

发表

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

A. Ramdane, A. Ougazzaden, Anthony Martinez, 2011 .

Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

T. Wunderer, A. Sirenko, A. Kazimirov, 2008 .

New Mechanical Testing Methods for Structural Materials at Small Size Scales

Chae Un Kim, Eric Verploegen, M. Volder, 2009 .

High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography

K. Hobart, T. Anderson, R. Stahlbush, 2019, APL Materials.

Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction

A. Ramdane, A. Ougazzaden, Anthony Martinez, 2013 .

X-ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi-facet GaN ridges

T. Wunderer, A. Sirenko, A. Kazimirov, 2008 .

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

A. Ougazzaden, G. Patriarche, R. Puybaret, 2014 .

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

C. Pradalier, A. Ougazzaden, G. Patriarche, 2016, Nanotechnology.

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

N. Bourzgui, A. Ougazzaden, G. Patriarche, 2014 .

Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

A. Ougazzaden, G. Patriarche, R. Puybaret, 2015 .

Defects in 4H-SiC epilayers affecting device yield and reliability

A. Agarwal, B. Odekirk, N. Mahadik, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Evolution of lattice distortions in 4H-SiC wafers with varying doping

R. Stahlbush, S. Stoupin, V. Rengarajan, 2020, Scientific Reports.

Nano-selective-area growth of group III-nitrides on silicon and conventional substrates

J. Salvestrini, P. Bonanno, Josyane Roschitz, 2016 .

Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures

A. Ramdane, A. Ougazzaden, Anthony Martinez, 2010 .

Highly aligned epitaxial nanorods with a checkerboard pattern in oxide films.

S. Cheong, A. Sirenko, A. Kazimirov, 2008, Nano letters.

On the Cover : New testing for small size scales

Benjamin B. Oswald, S. Cheong, A. Sirenko, 2009 .

Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

C. Pradalier, A. Ougazzaden, G. Patriarche, 2017 .