Lianshan Wang

发表

Shallow–Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar ($$ 11\bar{2}2 $$) Facet GaN

Zhiqin Lu, Z. Feng, Lianshan Wang, 2011 .

Fabrication of Freestanding GaN Micromechanical Structures on Silicon-on-Insulator Substrates

Soo Jin Chua, J. Arokiaraj, Lianshan Wang, 2005 .

Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors

Lianshan Wang, Shao-yan Yang, Zhanguo Wang, 2019, Semiconductor Science and Technology.

Raman scattering spectra in C-implanted GaN epilayers

S. Chua, G. Qin, Lianshan Wang, 2001 .

Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2018 .

Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1)

C. Thompson, S. Chua, Lianshan Wang, 2004 .

Hydride vapor phase epitaxy for gallium nitride substrate

Hongyuan Wei, Zhan-guo Wang, Lianshan Wang, 2019, Journal of Semiconductors.

Micro-Raman scattering in laterally epitaxial overgrown GaN

S. Chua, S. Tripathy, E. Sia, 2002 .

Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy

Hongyuan Wei, Lianshan Wang, Yuxia Feng, 2014 .

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2018 .

Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2016, Scientific Reports.

Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes

S. Chua, Lianshan Wang, C. B. Soh, 2011 .

Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates

Hongyuan Wei, Zhan-guo Wang, Qinsheng Zhu, 2014 .

InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization

S. Chua, Hailong Zhou, S. Tripathy, 2007 .

Photoluminescence of rapid-thermal annealed Mg-doped GaN films

C. Surya, W. Fong, Zhan-guo Wang, 2001 .

Impact of Cone‐Shape‐Patterned Sapphire Substrate and Temperature on the Epitaxial Growth of p‐GaN via MOCVD

Lianshan Wang, Shao-yan Yang, Zhanguo Wang, 2019, physica status solidi (a).

Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors

Hongyuan Wei, Qinsheng Zhu, Lianshan Wang, 2013 .

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

S. Chua, S. Tripathy, Lianshan Wang, 2005 .

Investigation of coherency stress-induced phase separation in AlN/AlxGa1−xN superlattices grown on sapphire substrates

Hongyuan Wei, Lianshan Wang, Shao-yan Yang, 2020 .

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2017 .

Competitive growth mechanisms of AlN on Si (111) by MOVPE

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2014, Scientific Reports.

Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2015 .

Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2017 .

Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates

S. Chua, S. Tripathy, Lianshan Wang, 2004 .

Carrier distribution characteristics of AlGaN-based ultraviolet light-emitting diodes at elevated temperatures

Xinglin Zhu, Wenhong Sun, Lianshan Wang, 2022, Journal of Materials Science: Materials in Electronics.

Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2015 .

Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer

Hongyuan Wei, Z. Wang, Qinsheng Zhu, 2014 .

The same band alignment of two hybrid 2D/3D vertical heterojunctions formed by combining monolayer MoS2 with semi-polar (11-22) GaN and c-plane (0001) GaN

Jianhong Yang, Wenge Yang, Guipeng Liu, 2022, Applied Surface Science.

Analysis of growth rate and crystal quality of AlN epilayers by flow-modulated metal organic chemical vapor deposition

Lianshan Wang, Shao-yan Yang, Zhanguo Wang, 2020 .

Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures

Hongyuan Wei, Qinsheng Zhu, Liuwan Zhang, 2014 .

Micro‐Raman spectroscopy of Si‐, C‐, Mg‐ and Be‐implanted GaN layers

S. Chua, S. Tripathy, Lianshan Wang, 2004 .

Outgoing multiphonon resonant Raman scattering and luminescence in Be- and C-implanted GaN

S. Chua, Xiaohong Zhang, Lianshan Wang, 2002 .

Raman Spectra of Semi-polar (11-22) InGaN Thick Films

Wenhong Sun, Lianshan Wang, Shao-yan Yang, 2022, Vibrational Spectroscopy.

Anisotropic Strain Relaxation in Semipolar (112¯2) InGaN/GaN Superlattice Relaxed Templates

Lianshan Wang, Shao-yan Yang, Huan-hua Wang, 2022, Nanomaterials.

Nanoheteroepitaxy of GaN on a nanopore array of Si(111) surface

C. Thompson, S. Chua, Y. D. Wang, 2007 .

Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays.

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2015, Nanoscale.

Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing

S. Chua, Baojun Li, E. Sia, 2003 .

Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films

C. Thompson, S. Chua, Lianshan Wang, 2003 .

Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2016, Nanoscale Research Letters.

Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer

Lianshan Wang, Zhanguo Wang, Xianglin Liu, 1998 .

Red Emission of InGaN/GaN Multiple‐Quantum‐Well Light‐Emitting Diode Structures with Indium‐Rich Clusters

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2018, physica status solidi (a).

Synthesis and ferroelectric properties of c‐axis oriented Bi4Ti3O12 thin films by sol‐gel process on platinum coated silicon

H. Gu, D. Bao, Lianshan Wang, 1996 .

Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes

Lianshan Wang, Shao-yan Yang, X. Liu, 2021 .

Nanoscale lateral epitaxial overgrowth of GaN on Si (111)

Soo Jin Chua, Lianshan Wang, S. Chua, 2005 .

Anisotropically biaxial strain in non-polar (112–0) plane InxGa1−xN/GaN layers investigated by X-ray reciprocal space mapping

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2017, Scientific Reports.

Structural, Surface and Optical Studies of m- and c-Face AlN Crystals Grown by Physical Vapor Transport Method

I. Ferguson, Z. Feng, Gu Xu, 2023, Materials.

The immiscibility of InAlN ternary alloy

Xiaoqing Xu, Hongyuan Wei, Lianshan Wang, 2016, Scientific Reports.

A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition

I. Ferguson, B. Klein, Z. Feng, 2022, Semiconductor Science and Technology.

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

Xiaohui Wang, Lianshan Wang, D. Wang, 1998 .

Influence of Rapid Thermal Annealing on the Luminescence Properties of Nanoporous GaN Films

Soo Jin Chua, Lianshan Wang, B. C. Foo, 2006 .

Improvements of Structural and Optical Properties of GaN/Al0.10Ga0.9N Multi-Quantum Wells by Isoelectronic In-doping

S. Chua, Lianshan Wang, W. -. Sun, 2001 .

Outgoing Multiphonon Resonant Raman Scattering in Be‐ and C‐Implanted GaN

S. Chua, Lianshan Wang, Xiong Zhang, 2001 .

Nanoscale epitaxial overgrowth process and properties of GaN layers on Si (111) substrates

Soo Jin Chua, Lianshan Wang, Sudhiranjan Tripathy, 2006 .

Structural properties of ZnO grown on GaN/sapphire templates : The transition from nanorods to thin films

J. Lin, S. Chua, H. Pan, 2007 .

The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy

Xiaohui Wang, Lianshan Wang, Xianglin Liu, 1998 .

High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

Soo Jin Chua, Peng Chen, Eugene A. Fitzgerald, 2005 .

Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms

Soo Jin Chua, Lianshan Wang, S. Vicknesh, 2007 .

Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si(111)

C. Thompson, S. Chua, Y. D. Wang, 2006 .

InGaN Multiple Quantum Well Blue LED Grown on Patterned Sapphire Substrates

Lianshan Wang, Shengwa Liu, Zhechuan Feng, 2011, Symposium on Photonics and Optoelectronics.

Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE*

Hongyuan Wei, Lianshan Wang, Guijuan Zhao, 2016 .

Growth and characterization of amber light-emitting diodes with dual-wavelength InGaN/GaN multiple-quantum-well structures

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2019, Materials Research Express.

Wet etching of semi-polar (11–22) GaN on m-sapphire by different methods

Lianshan Wang, Shao-yan Yang, Wenlong Li, 2021 .

Regrowth characterisics of semipolar (11–22) GaN epitaxial film on corroded semipolar GaN template

Lianshan Wang, Wenlong Li, Ruohao Chai, 2023, Micro and Nanostructures.

Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates

Lianshan Wang, Zhanguo Wang, Xianglin Liu, 1998 .

Optical activation of Eu ions in nanoporous GaN films

E. Fitzgerald, S. Chua, B. Foo, 2006 .

The influence of high-temperature nitridation process on the crystalline quality of semipolar (112¯

Wenhong Sun, Lianshan Wang, Shao-yan Yang, 2022, Current Applied Physics.

Raman Scattering and Photoluminescence of Mg‐Implanted GaN Films

Lianshan Wang, Soo Jin Chua, Wenhong Sun, 2001 .

The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy

Ze Zhang, Zhan-guo Wang, Lianshan Wang, 1998 .

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

Lianshan Wang, Guijuan Zhao, Shao-yan Yang, 2016, Nanomaterials.