J. Powell

发表

Growth of step-free surfaces on device-size (0001)SiC mesas

R. W. Hoffman, P. Neudeck, G. Beheim, 2000 .

The forward-in-time upstream advection scheme:extension to higher orders

R. Pielke, W. Cotton, C. Tremback, 1987 .

A bias in amplitude measurements

J. Powell, 1985 .

Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers

W. J. Choyke, P. Pirouz, J. Powell, 1990 .

Beam collapse as an explanation for anomalous ocular damage

Jerome V Moloney, Alan C. Newell, Richard A. Albanese, 1993 .

Thermal oxidation of single-crystal silicon carbide - Kinetic, electrical, and chemical studies

P. Neudeck, J. Powell, L. Matus, 1992 .

Accurate Lattice Constant and Mismatch Measurements of SiC Heterostructures by X-Ray Multiple-Order Reflections

P. Neudeck, M. Dudley, J. Powell, 2002 .

Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals

J. Powell, A. J. Trunek, D. J. Larkin, 1997 .

Optical zero-differential pressure switch and its evaluation in a multiple pressure measuring system

J. Powell, 1977 .

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

P. Neudeck, C. Salupo, J. Powell, 1993, IEEE Electron Device Letters.

Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Cyclotron Resonance over a wide Temperature Range

D. Taylor, J. Powell, D. Bagguley, 1957 .

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

P. Neudeck, M. Skowronski, M. Dudley, 2003 .

Recent Developments in SiC (USA)

J. Powell, L. Matus, 1989 .

Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

A. Steckl, J. Powell, D. J. Larkin, 1993 .

Growth and characterizaton of 3C-SiC and 6H-SiC films on 6H-SiC wafers

J. Powell, L. Matus, J. Petit, 1992 .

Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers

J. Edgar, J. Powell, D. J. Larkin, 1992 .

Synchrotron white-beam topographic studies of 2H–SiC crystals

P. Neudeck, M. Dudley, J. Powell, 2001 .

Crystal Growth of 2H Silicon Carbide

J. Powell, 1969 .

Raman determination of layer stresses and strains for heterostructures and its application to the cubic SiC/Si system

W. J. Choyke, Z. Feng, J. Powell, 1988 .

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

P. Neudeck, J. Powell, A. J. Trunek, 2004 .

Strain relief and dislocation motion in III-nitride films grown on stepped and step-free 4H‐SiC mesas

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Low‐temperature photoluminescence studies of chemical‐vapor‐deposition‐grown 3C‐SiC on Si

W. J. Choyke, Z. Feng, J. Powell, 1988 .

Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC

W. J. Choyke, R. Devaty, H. Kong, 1993 .

High voltage 6H-SiC rectifiers: prospects and progress

P. Neudeck, J. Powell, L. Matus, 1993, 51st Annual Device Research Conference.

Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication

J. Powell, L. Matus, J. Petit, 1991 .

Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

Herbert A. Will, Shigehiro Nishino, S. Nishino, 1983 .

Low‐Temperature Solid‐State Phase Transformations in 2H Silicon Carbide

J. Powell, H. Will, 1972 .

Silicon carbide, a high temperature semiconductor

J. A. Powell, J. Powell, 1983 .

Silicon Carbide: Progress in Crystal Growth

J. Powell, 1987 .

Epitaxial growth of 6H SiC in the temperature range 1320–1390°C

J. Powell, H. Will, 1973 .

Growth of 2H silicon carbide crystals

J. Powell, 1969 .

Electron channeling contrast imaging of atomic steps and threading dislocations in 4H-SiC

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Raman scattering studies of chemical‐vapor‐deposited cubic SiC films of (100) Si

W. J. Choyke, A. Mascarenhas, Z. Feng, 1988 .

Growth and Characterization of Cubic SiC Single‐Crystal Films on Si

Maria A. Kuczmarski, Lawrence G. Matus, J. Powell, 1987 .

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

P. Neudeck, C. Eddy, M. Twigg, 2010 .

Simulation of Forescattered Electron Channeling Contrast Imaging of Threading Dislocations Penetrating SiC Surfaces

P. Neudeck, C. Eddy, M. Twigg, 2008 .

Site‐competition epitaxy for superior silicon carbide electronics

Philip G. Neudeck, Lawrence G. Matus, P. Neudeck, 1994 .

White-beam synchrotron topographic analysis of multi-polytype SiC device configurations

J. A. Powell, Shaoping Wang, P. Neudeck, 1995 .

Computer Aided Synchrotron White Beam X-Ray Topographic Analysis of Multipolytype SiC Device Configurations

P. Neudeck, M. Dudley, J. Powell, 1994 .

SiC Growth by Solvent-Laser Heated Floating Zone

Philip G. Neudeck, David J. Spry, Andrew J. Trunek, 2012 .

Lattice defects in beta-SiC grown epitaxially on silicon substrates

J. A. Powell, C. M. Chorey, P. Pirouz, 1987 .

Stress-Induced Polytypic Transformation in Sic

P. Pirouz, J. Powell, Tetsuya Suzuki, 1992 .

Non-generic connections corresponding to front solutions

M. Tabor, J. Powell, 1992 .

Laser Anemometer Measurements in a Transonic Axial Flow Compressor Rotor

A. J. Strazisar, J. A. Powell, J. Powell, 1981 .

Conditional stability of front solutions

J. Powell, 1997 .

Localized states in fluid convection and multi-photon lasers

P. Jakobsen, J. Powell, 1993 .

Nonlinear fronts near a first-order phase transition.

J. Powell, 1990 .

Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects

P. Neudeck, J. Powell, A. J. Trunek, 2004 .

Performance limiting micropipe defects in silicon carbide wafers

P. Neudeck, J. Powell, P.G. Neudeck, 1994, IEEE Electron Device Letters.

The “Buffer” Layer in the Cvd Growth of β-SiC on (001) Silicon

P. Pirouz, J. Powell, T. Cheng, 1989 .

Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas

P. Neudeck, J. Powell, 2004 .

Improved β-SiC heteroepitaxial films using off-axis Si substrates

C. M. Chorey, P. Pirouz, J. Powell, 1987 .

Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas

P. Neudeck, K. Hobart, C. Eddy, 2006 .

A statistical study of earthquake occurrence

J. Powell, S. Duda, James A. Powell, 1975 .

Antiphase boundaries in epitaxially grown β‐SiC

J. A. Powell, C. M. Chorey, P. Pirouz, 1987 .

Surface morphology of silicon carbide epitaxial films

Phillip B. Abel, P. Abel, J. Powell, 1995 .

High-Temperature Electronic Requirements in Aeropropulsion Systems

W. C. Nieberding, William C. Nieberding, J. Anthony Powell, 1981, IEEE Transactions on Industrial Electronics.

Application of oxidation to the structural characterization of SiC epitaxial films

W. J. Choyke, P. Pirouz, J. Edgar, 1991 .

Growth of improved quality 3C-SiC films on 6H-SiC substrates

W. J. Choyke, P. Pirouz, J. Powell, 1990 .

Process‐Induced Morphological Defects in Epitaxial CVD Silicon Carbide

J. A. Powell, J. Powell, D. J. Larkin, 1997 .

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy

Balaji Raghothamachar, Michael Dudley, Philip G. Neudeck, 2012 .

Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

P. Neudeck, C. Eddy, M. Twigg, 2005 .

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

P. Neudeck, C. Eddy, M. Twigg, 2007 .

Dislocation Nucleation and Growth in MOCVD GaN/AlN Films on Stepped and Step-free 4H-SiC Mesa Substrates

P. Neudeck, C. Eddy, M. Twigg, 2008 .

Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC

P. Neudeck, C. Eddy, M. Twigg, 2006 .

Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates

P. Neudeck, C. Eddy, M. Twigg, 2004 .

Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC

P. Neudeck, C. Eddy, M. Twigg, 2006 .

A Transmission Electron Microscopy Investigation of GaN grown on Patterned, Step-Free 4H-SiC Mesas

P. Neudeck, C. Eddy, M. Twigg, 2005, 2005 International Semiconductor Device Research Symposium.

Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers

P. Neudeck, G. Beheim, M. Dudley, 2002 .

CFD Growth of 3C-SiC on 4H/6H Mesas

P. Neudeck, M. Skowronski, Xianrong Huang, 2006 .

Growth Evolution of Gallium Nitride Films on Stepped and Step-Free SiC Surfaces

P. Neudeck, C. Eddy, M. Twigg, 2003 .

HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces

P. Neudeck, J. Powell, A. J. Trunek, 2009 .

2000 V 6H-SIC P-N JUNCTION DIODES GROWN BY CHEMICAL VAPOR DEPOSITION

Philip G. Neudeck, Lawrence G. Matus, P. Neudeck, 1994 .

Modeling of the SiC chemical vapor deposition process and comparison with experimental results

K. Annen, C. Stinespring, J. Powell, 1990 .

Comparison of Dilutely Doped p-Type 6H-SiC from a Variety of Sources

W. J. Choyke, R. Devaty, H. Kong, 1992 .

Calibration of 1-nm SiC step height standards

Ndubuisi G. Orji, Ronald G. Dixson, Theodore V. Vorburger, 2010, Advanced Lithography.

An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center

Gary W. Hunter, Liang-Yu Chen, Glenn M. Beheim, 2003 .

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

P. Neudeck, C. Salupo, J. Powell, 1994 .

Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers

W. J. Choyke, P. Pirouz, J. Edgar, 1991 .

Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas

P. Neudeck, M. Skowronski, C. Eddy, 2006 .

Optical reflectivity of 3C and 4H‐SiC polytypes: Theory and experiment

W. J. Choyke, W. Suttrop, M. Alouani, 1993 .

Site-Competition Epitaxy for Controlled Doping of CVD Silicon Carbide

P. Neudeck, J. Powell, L. Matus, 1998 .

Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas

Philip G. Neudeck, Andrew J. Trunek, Phillip B. Abel, 2005 .

Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces

P. Neudeck, G. Beheim, M. Dudley, 2002 .

The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers

P. Pirouz, J. Powell, W. Zhou, 1997 .

An earthquake migration pattern of high statistical significance

J. Powell, S. Duda, 1975 .

Atomic Force Microscope Observation of Growth and Defects on As-Grown (111) 3C-SiC Mesa Surfaces

P. Neudeck, J. Powell, A. J. Trunek, 2004 .

Defects In 4H Silicon Carbide CVD Epilayers

L. Zhou, P. Pirouz, J. Powell, 1996 .

High‐voltage 6H‐SiC p‐n junction diodes

C. Salupo, J. Powell, L. Matus, 1991 .

Investigation of Defects in Epitaxial 3 CSiC , 4 H-SiC , and 6 H-SiC Films Grown on SiC Substrates

P. Neudeck, P. Pirouz, J. Powell, 1998 .

Nearly real fronts in a Ginzburg–Landau equation

T. Kapitula, J. Powell, C. Jones, 1990, Proceedings of the Royal Society of Edinburgh: Section A Mathematics.