D. Fuhrmann

发表

Catalyst-free vapor-phase transport growth of vertically aligned ZnO nanorods on 6H-SiC and (11-20)Al2O3

A. Waag, A. Bakin, A. El-Shaer, 2006 .

Comparison of GaInN laser structures grown on different substrates

H. Schenk, A. D. Dräger, A. Hangleiter, 2008 .

Recombination Mechanism in Short-Wavelength GaN/AlGaN Quantum Wells

A. Hangleiter, D. Fuhrmann, U. Rossow, 2004 .

Vapour transport growth of ZnO nanorods

A. Waag, A. Bakin, F. Bertram, 2007 .

Stark shift of interband transitions in AlN∕GaN superlattices

M. Eickhoff, G. Gobsch, F. Furtmayr, 2007 .

Experimental Analysis of the Spontaneous Polarization Field in GaN by UHV-cathodoluminescence

A. Hangleiter, D. Fuhrmann, U. Rossow, 2006 .

Optimization of GaN/AlGaN Quantum Wells for Ultraviolet Emitters

A. Hangleiter, D. Fuhrmann, U. Rossow, 2003 .

Aqueous chemical growth and patterning of ZnO nanopillars on different substrate materials

A. Waag, H. Wehmann, A. Hangleiter, 2006 .

Reflectance difference spectroscopy RDS/RAS combined with spectroscopic ellipsometry for a quantitative analysis of optically anisotropic materials

R. Goldhahn, A. Hangleiter, D. Fuhrmann, 2005 .

Recombination of free excitons in polar and nonpolar nitride quantum wells

A. Hangleiter, D. Fuhrmann, U. Rossow, 2010 .

Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

P. Hinze, A. Hangleiter, D. Fuhrmann, 2007 .

Emission and recombination characteristics of Ga 1-x In x N/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits

Heiko Bremers, Uwe Rossow, Andreas Hangleiter, 2007 .

Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity

O. Ambacher, M. Eickhoff, G. Gobsch, 2003 .

Study of Exciton Dead Layers in GaN Schottky Diodes with N and Ga‐Face Polarity

O. Ambacher, G. Gobsch, D. Fuhrmann, 2002 .

High quality, high efficiency and ultrahigh In‐content InGaN QWs – the problem of thermal stability

A. Hangleiter, D. Fuhrmann, H. Bremers, 2008 .

Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes

P. Hinze, A. Hangleiter, D. Fuhrmann, 2006 .

Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency.

P. Hinze, A. Hangleiter, D. Fuhrmann, 2005, Physical review letters.

Controlled low-temperature fabrication of ZnO nanopillars with a wet-chemical approach

Andrey Bakin, Andreas Waag, Hergo-Heinrich Wehmann, 2007 .

Growth of AlxGa1−xN-layers on planar and patterned substrates

J. Bläsing, G. Ecke, A. Krost, 2004 .

Optimizing the internal quantum efficiency of GaInN SQW structures for green light emitters

P. Hinze, A. Hangleiter, D. Fuhrmann, 2006 .

Influence of excitons and electric fields on the dielectric function of GaN: Theory and experiment

Rüdiger Goldhahn, Gerhard Gobsch, Armin Dadgar, 2006 .

Dielectric function and critical points of the band structure for AlGaN alloys

Uwe Rossow, Christoph Cobet, Rüdiger Goldhahn, 2005 .

Dislocation screening and strongly increased internal quantum efficiency in heteroepitaxial GaN / Al x Ga 1 − x N ultraviolet-emitting quantum wells

P. Hinze, A. Hangleiter, D. Fuhrmann, 2009 .

Towards understanding the emission efficiency of nitride quantum wells

A. Hangleiter, D. Fuhrmann, C. Netzel, 2004 .

Large internal quantum efficiency of In-free UV-emitting GaN∕AlGaN quantum-well structures

P. Hinze, A. Hangleiter, D. Fuhrmann, 2006 .