Xuelin Yang

发表

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Z. Qin, Xianbin Li, Xue-Peng Wang, 2020, Advanced science.

Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs

Xiaodong Wang, Z. Qin, W. Ge, 2016 .

Investigation of carrier compensation traps in n−-GaN drift layer by high-temperature deep-level transient spectroscopy

W. Ge, Fujun Xu, N. Tang, 2020 .

The effect of kink and vertical leakage mechanisms in GaN-on-Si epitaxial layers

Maojun Wang, B. Shen, Xuelin Yang, 2020, Semiconductor Science and Technology.

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

W. Ge, Maojun Wang, Fujun Xu, 2020 .

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance

C. Wen, Maojun Wang, B. Xie, 2020, IEEE Electron Device Letters.

High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure

V. Kozlovsky, M. Albrecht, Z. Qin, 2016, Advanced materials.

O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Kevin J. Chen, C. Liu, Sen Huang, 2015 .

Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt

V. Kozlovsky, Tongjun Yu, Z. Qin, 2019, Advanced Optical Materials.

High-electron-mobility InN epilayers grown on silicon substrate

Mo Li, Xiaodong Wang, W. Ge, 2018 .

Al diffusion at AlN/Si interface and its suppression through substrate nitridation

W. Ge, Fujun Xu, B. Shen, 2020, Applied Physics Letters.

Hysteresis phenomena of the two dimensional electron gas density in lattice-matched InAlN/GaN heterostructures

Xiaodong Wang, Tongjun Yu, W. Ge, 2015 .

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Z. Qin, W. Ge, Fujun Xu, 2021 .

High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer

W. Ge, Fujun Xu, N. Tang, 2020 .

Period size effect induced crystalline quality improvement of AlN on a nano-patterned sapphire substrate

Xiaodong Wang, Z. Qin, W. Ge, 2019, Japanese Journal of Applied Physics.

Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique

Z. Qin, N. Tang, B. Shen, 2015 .

Structural and optical properties of m-plane GaN/AlGaN quantum wires grown by metalorganic chemical vapor deposition

Y. Arakawa, M. Arita, S. Kako, 2011 .

Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure

Sen Huang, Junfeng Li, Chao Zhao, 2016 .

High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

Xiaodong Wang, Fujun Xu, N. Tang, 2015 .

Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates

Tongjun Yu, Fujun Xu, B. Shen, 2017 .

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates

W. Ge, F. Zheng, Fujun Xu, 2022, Advanced Functional Materials.

Fluorine plasma treatment induced deep level traps and their effect on current transportation in Al0.83In0.17N/AlN/GaN Schottky barrier diodes

Tongjun Yu, Guoyi Zhang, B. Shen, 2016 .

β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

Xiaodong Wang, A. Imran, Xiantong Zheng, 2019, Journal of Semiconductors.

Role of hole trapping in the unintentionally doped GaN layer in suppressing the two-dimensional electron gas degradation in AlGaN/GaN heterostructures on Si

X. He, Xia Guo, B. Shen, 2019, Nanotechnology.

Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

W. Ge, Fujun Xu, N. Tang, 2014 .

High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications

L. Sang, M. Liao, M. Sumiya, 2021, Fundamental Research.

Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer

Mo Li, Shibo Wang, Qi Qi, 2018, Sensors.

High-mobility n−-GaN drift layer grown on Si substrates

Zheng-hao Chen, L. Sang, W. Ge, 2021 .

Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN

W. Ge, Shiping Guo, Peng Zhang, 2019, Applied Physics Express.

Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers

Y. Arakawa, M. Arita, S. Kako, 2011 .

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Z. Qin, Fujun Xu, B. Shen, 2020, Advanced Functional Materials.

Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier

W. Ge, N. Tang, B. Shen, 2016, Scientific reports.

Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires

Mo Li, Xiaodong Wang, Z. Qin, 2017 .

Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells

L. Sang, M. Liao, Y. Koide, 2021, Applied Physics Letters.

Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid

Xin He, W. Ge, Fujun Xu, 2014, Scientific Reports.

Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements

Xiaodong Wang, Z. Qin, W. Ge, 2016 .

Vertical leakage induced current degradation and relevant traps with large lattice relaxation in AlGaN/GaN heterostructures on Si

Xiaodong Wang, W. Ge, Zonghai Hu, 2018 .

Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

Guoyi Zhang, Xuelin Yang, Cunda Wang, 2014 .

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Z. Qin, W. Ge, N. Zhang, 2020 .

Temperature sensitive photoconductivity observed in InN layers

Xiaodong Wang, W. Ge, Xiantong Zheng, 2013 .

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Zhizhong Chen, G. Y. Zhang, B. Shen, 2006 .

Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate

A. Imran, W. Ge, Xiantong Zheng, 2021, Fundamental Research.

An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps

Kevin J. Chen, Maojun Wang, Y. Hao, 2023, IEEE Electron Device Letters.

Temperature-dependent polarization characteristics in Al0.25Ga0.75N/AlN/GaN heterostructure

Guoyi Zhang, B. Shen, X. Kang, 2016 .

Self‐assembled m ‐plane InGaN quantum dots: formation and shape evolution

Y. Arakawa, M. Arita, S. Kako, 2012 .

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

W. Ge, N. Tang, B. Shen, 2019, Advanced Functional Materials.

2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT

P. Han, Hengjing Tang, Xue Li, 2014 .

Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration

Zhihong Zhang, Kaihui Liu, B. Sheng, 2021, Advanced materials.

Epitaxial growth mechanisms of single-crystalline GaN on single-crystalline graphene

W. Ge, B. Shen, Zhihong Zhang, 2021, CrystEngComm.

Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

Z. Qin, W. Ge, X. Kang, 2022, Superlattices and Microstructures.

Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN.

Mo Li, W. Ge, Xiantong Zheng, 2017, Optics express.

Tuning the graphene work function by uniaxial strain

W. Ge, Lin Gan, N. Tang, 2015 .

Migration of carbon from Ga sites to N sites in GaN: a combined PAS and hybrid DFT study

W. Ge, Peng Zhang, Xingzhong Cao, 2019, Japanese Journal of Applied Physics.

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

W. Ge, Wensheng Yan, N. Tang, 2022, Applied Physics Letters.

Elastic strain engineered nanomechanical GaN resonators with thermoelastic dissipation dilution up to 600 K

J. You, L. Sang, M. Liao, 2022, Journal of Applied Physics.

Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures

W. Ge, Xiaosong Wu, N. Tang, 2020, Advanced Functional Materials.

Theoretical Simulation and Experimental Verification of the Competition between Different Recombination Channels in GaN Semiconductor

Lin Shi, Xiaobao Yang, Xuelin Yang, 2022, Journal of Materials Chemistry C.

Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN.

W. Ge, Qing Zhang, N. Tang, 2018, Physical review letters.

Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

Xuan Liu, W. Ge, Maojun Wang, 2023, Advanced Electronic Materials.

High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH 3 pulse flow cleaning process

B. Shen, Xuelin Yang, Xinqiang Wang, 2017 .

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Jie Zhang, Ning Tang, Chenguang He, 2016, Scientific Reports.

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

Mo Li, M. Albrecht, Mathias Müller, 2017, Scientific Reports.

Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN

Z. Qin, W. Ge, Xiantong Zheng, 2019, Advanced Functional Materials.

Step-Graded AlGaN vs superlattice: role of strain relief layer in dynamic on-resistance degradation

W. Ge, Xuelin Yang, Bo Shen, 2021, Applied Physics Express.

GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion

C. Wen, Maojun Wang, B. Xie, 2023, IEEE Transactions on Electron Devices.

Interface charge engineering in down-scaled AlGaN (<6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs

Sen Huang, Xinyu Liu, Xinhua Wang, 2020 .

Formation of p-n-p junction with ionic liquid gate in graphene

Xiaodong Wang, W. Ge, Yuewei Zhang, 2014 .

Mechanism for self-compensation in heavily carbon doped GaN

W. Ge, N. Tang, Xuelin Yang, 2023, AIP Advances.

Electronic properties of polycrystalline graphene under large local strain

Xiaodong Wang, W. Ge, N. Tang, 2014 .

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Mo Li, W. Guo, W. Ge, 2018, Advanced science.

High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

W. Ge, Huarui Sun, N. Tang, 2021 .

Direct evidence of hydrogen interaction with carbon: C–H complex in semi-insulating GaN

W. Ge, B. Shen, Xuelin Yang, 2020 .

Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

W. Ge, Qing Zhang, Xuelin Yang, 2022, Applied Physics Letters.

Planar anisotropic Shubnikov-de-Haas oscillations of two-dimensional electron gas in AlN/GaN heterostructure

W. Ge, Xiaosong Wu, B. Shen, 2019, Applied Physics Letters.

Deep-level traps induced dark currents in extended wavelength InxGa1−xAs/InP photodetector

Xiaoli Ji, Hengjing Tang, Haimei Gong, 2013 .

Low-Resistive Ohmic Contacts in High-Electron-Mobility AlN/GaN Heterostructures by Suppressing the Oxygen Incorporation

F. Liu, W. Ge, B. Sheng, 2022, ACS Applied Electronic Materials.

Shear strain induced modulation to the transport properties of graphene

Xiaodong Wang, W. Ge, N. Tang, 2014 .

Enhanced transport properties in InAlGaN/AlN/GaN heterostructures on Si (111) substrates: The role of interface quality

Jie Zhang, Panfeng Ji, Ning Tang, 2017 .

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Z. Qin, W. Ge, X. Kang, 2022, Light, science & applications.

Evolution of traps in TiN/O3-sourced Al2O3/GaN gate structures with thermal annealing temperature

Sen Huang, Chao Zhao, Qilong Bao, 2018 .

Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods

Jian Zhang, Xuelin Yang, Bowen Sheng, 2017 .

Stress evolution in AlN growth on nano-patterned sapphire substrates

W. Ge, N. Zhang, B. Shen, 2019, Applied Physics Express.

Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN.

W. Ge, Qing Zhang, N. Tang, 2018, Physical review letters.

Determination of CN deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach

W. Ge, N. Tang, Xuelin Yang, 2023, Journal of Applied Physics.

Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates

Hongping Ma, Xuelin Yang, Bo Shen, 2023, AIP Advances.

Progress in efficient doping of Al-rich AlGaN

Xuelin Yang, Bo Shen, Xinqiang Wang, 2024, Journal of Semiconductors.

Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor.

N. Tang, B. Shen, Xuelin Yang, 2016, ACS applied materials & interfaces.

Raman scattering and ferromagnetism of (Ga, Mn)N films grown by MOCVD

Jiejun Wu, Guoyi Zhang, Xuelin Yang, 2007 .

Magnetic and magneto-transport properties of Ga1−xMnxN grown by MOCVD

Jiejun Wu, Guoyi Zhang, Xuelin Yang, 2007 .

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Shan Wu, Yue Xu, Bo Shen, 2019, Applied Sciences.

Hot electron assisted vertical leakage/breakdown in AlGaN/GaN heterostructures on Si substrates

W. Ge, N. Tang, B. Shen, 2017 .

Group-III nitride heteroepitaxial films approaching bulk-class quality

W. Ge, N. Tang, X. Kang, 2023, Nature Materials.

Influence of barrier thickness on luminescence lifetime of the two-dimensional electron gas in InAlN/GaN heterostructures

W. Ge, L. Fu, N. Tang, 2017 .