S. Sundaram

发表

Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride

A. Ougazzaden, G. Patriarche, P. Voss, 2019, Advanced Materials Interfaces.

Effects of dc bias on electrolyte electroreflectance spectra

L. Bassett, S. Sundaram, J. Wrobel, 1986 .

Bandgap energy bowing parameter of strained and relaxed InGaN layers

Nicolas Fressengeas, T. Moudakir, G. Orsal, 2014 .

Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

A. Ougazzaden, G. Patriarche, T. Moudakir, 2013 .

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

I. Ferguson, M. Razeghi, A. Ougazzaden, 2017, Nanotechnology.

Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors

A. Ougazzaden, M. B. Assouar, P. Voss, 2015 .

Investigation of deformation of the cornea during tonometry using FEM

G. Prabhu, S. Sundaram, Bharathi R. B., 2020 .

Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN.

A. Ougazzaden, G. Patriarche, P. Voss, 2020, ACS applied materials & interfaces.

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

A. Ougazzaden, G. Patriarche, T. Leichlé, 2020, Scientific Reports.

Experimental Study and Device Design of NO, NO2, and NH3Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

A. Ougazzaden, A. Soltani, P. Voss, 2016 .

Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280nm

R. Dupuis, A. Ougazzaden, G. Patriarche, 2015 .

Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi‐bulk InGaN buffer for blue to green regime emission

A. Ougazzaden, P. Voss, J. Salvestrini, 2017 .

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

A. Ougazzaden, G. Patriarche, R. Puybaret, 2014 .

Microstructural and electrical investigation of Pd/Au ohmic contact on p-GaN

A. Ramdane, A. Ougazzaden, Anthony Martinez, 2015 .

Investigation of new approaches for InGaN growth with high indium content for CPV application

A. Ougazzaden, Anthony Martinez, G. Patriarche, 2015 .

Exfoliation of AlN film using two-dimensional multilayer hexagonal BN for deep-ultraviolet light-emitting diodes

A. Ougazzaden, Xuecheng Wei, Jianchang Yan, 2018, Applied Physics Express.

MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics

A. Ougazzaden, G. Patriarche, P. Voss, 2021, APL Materials.

Wafer-scale MOVPE growth and characterization of highly ordered h-BN on patterned sapphire substrates

A. Ougazzaden, G. Patriarche, S. Sundaram, 2019, Journal of Crystal Growth.

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

A. Ougazzaden, G. Patriarche, P. Voss, 2017, Scientific Reports.

Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors

A. Ougazzaden, Xiaohang Li, P. Voss, 2021, ACS omega.

Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

A. Ougazzaden, A. Soltani, P. Voss, 2016, IEEE Sensors Journal.

Raman scattering by epitaxial GaAs on a Si substrate

M. Kallergi, B. Roughani, S. Sundaram, 1989 .

Impact of the sensor temperature on low acetone concentration detection using AlGaN/GaN HEMTs

A. Ougazzaden, P. Voss, S. Gautier, 2020, Proceedings of 7th International Electronic Conference on Sensors and Applications.

Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

Suresh Sundaram, Ali Soltani, Abdallah Ougazzaden, 2016, Sensors.

Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature

N. Bourzgui, A. Ougazzaden, A. Soltani, 2019, 2019 IEEE SENSORS.

Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery

K. Merghem, A. Ramdane, A. Ougazzaden, 2018 .

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

C. Pradalier, A. Ougazzaden, G. Patriarche, 2016, Nanotechnology.

Effects of implantant depth distribution on photoluminescence spectra in Be-implanted GaAs

S. G. Bishop, B. McCombe, S. Sundaram, 1977 .

Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

A. Ougazzaden, P. Voss, S. Gautier, 2021, Nanomaterials.

Synthesis and characterization of InN nanocrystals on glass substrate by plasma assisted reactive evaporation

M. Alizadeh, A. Shuhaimi, K. Hakim, 2017 .

Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

A. Ougazzaden, G. Patriarche, R. Puybaret, 2015 .

ffThermal Stability of Thin hexagonal Boron Nitride grown by MOVPE on Epigraphene

C. Berger, W. D. de Heer, A. Ougazzaden, 2022, Journal of Crystal Growth.

Electroreflectance study of Hg1−xMnxTe in the E1 and E1+Δ1 energy regions

P. Becla, L. Bassett, S. Sundaram, 1986 .

Single Crystal YIG and Allied Materials

S. Sundaram, T. Kutty, 1994 .

Spectroscopic ellipsometry studies of YBa2Cu3O7−δ deposited on SrTiO3

L. Sengupta, D. Huang, B. Roughani, 1991 .

Modulated reflectance study of strain in epitaxial GaAs on silicon

M. Kallergi, S. Sundaram, J. Aubel, 1989 .

Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN

J. Brault, A. Michon, A. Ougazzaden, 2022, Materials.

Lattice damage and atomic mixing induced by As++ implantation and thermal annealing in AlAs/GaAs multiple quantum‐well structures

M. Kallergi, D. Huang, G. Desalvo, 1991 .

Effects of implantation and annealing on the Raman spectrum of InP and GaAs

R. L. Schmidt, S. Sundaram, J. Comas, 1981 .

InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop

A. Ougazzaden, P. Voss, J. Salvestrini, 2017 .

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs

K. Chattopadhyay, K. Evans, R. Kaspi, 1997 .

Vertical full-colour micro-LEDs via 2D materials-based layer transfer

Young Joon Hong, V. Bulović, A. Ougazzaden, 2023, Nature.

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Xin Li, Gilles Patriarche, Abdallah Ougazzaden, 2016 .

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

Abdallah Ougazzaden, Paul L. Voss, Xin Li, 2016 .

MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates

A. Ougazzaden, G. Patriarche, P. Voss, 2019, Journal of Crystal Growth.

Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance

Xin Li, Abdallah Ougazzaden, Paul L. Voss, 2018, ACS Photonics.

MOVPE grown periodic AlN/BAlN heterostructure with high boron content

R. Dupuis, A. Ougazzaden, J. Leymarie, 2015 .

BAlN thin layers for deep UV applications

Xin Li, Sophie Bouchoule, Gilles Patriarche, 2015 .

Study of ion-implantation damage in GaAs:Be and InP:Be using Raman scattering

C. R. Rao, R. L. Schmidt, S. Sundaram, 1983 .

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

Xin Li, Gilles Patriarche, Abdallah Ougazzaden, 2017, Scientific Reports.

AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

R. Dupuis, A. Ougazzaden, G. Patriarche, 2015 .

Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

A. Ougazzaden, G. Patriarche, P. Voss, 2021 .

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

A. Ougazzaden, G. Patriarche, P. Voss, 2017, Scientific Reports.

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

A. Ougazzaden, G. Patriarche, P. Voss, 2017, Scientific Reports.

Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition.

James V. Gigliotti, U. Landman, C. Berger, 2020, ACS nano.

Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template

A. Ougazzaden, G. Patriarche, T. Ngo, 2023, Advanced Materials Technologies.

Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications

Abdallah Ougazzaden, Paul L. Voss, Yacine Halfaya, 2019, Advanced Materials Technologies.

Interband transitions in molecular‐beam‐epitaxial AlxGa1−xAs/GaAs

W. T. Beard, S. Sundaram, J. Comas, 1985 .

Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

A. Migan, A. Ougazzaden, G. Patriarche, 2017 .

Design and fabrication process flow for high-efficiency and flexible InGaN solar cells

A. Ougazzaden, E. Monroy, P. Voss, 2023, Micro and Nanostructures.

Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

C. Pradalier, A. Ougazzaden, G. Patriarche, 2017 .

Correlation of interference effects in photoreflectance spectra with GaAs homolayer thickness

B. Roughani, S. Sundaram, J. Aubel, 1990 .

Single crystalline boron rich B(Al)N alloys grown by MOVPE

A. Ougazzaden, G. Patriarche, K. Krishnan, 2020 .

Electroreflectance of ion-implanted GaAs

R. L. Brown, P. M. Raccah, S. Sundaram, 1981 .

Modifications of Defects Concentration Induced by Ammonia Flow Rate and its Effects on Gallium Nitride Grown by MOCVD

K. Baskar, V. Ganesan, V. Ganesh, 2009 .

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

C. Berger, A. Ougazzaden, G. Patriarche, 2016 .

Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics.

C. Berger, A. Ougazzaden, G. Patriarche, 2015, 1510.04513.

Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices

L. Largeau, A. Ougazzaden, G. Patriarche, 2022, ACS Applied Nano Materials.

Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well

A. Ougazzaden, G. Patriarche, P. Voss, 2017 .

Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates

A. Ougazzaden, P. Voss, T. Moudakir, 2023, Advanced Materials Technologies.

Photoinduced doping in hexagonal boron nitride

A. Ougazzaden, P. Voss, J. Salvestrini, 2023, Applied Physics Letters.

Electroreflectance studies above the fundamental gap on InxGa1−xAs layers deposited on GaAs

J. Salerno, S. Sundaram, J. V. Gormley, 1986 .

High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

A. Ougazzaden, G. Patriarche, R. Puybaret, 2015 .