J. Lahnemann

发表

Luminescence associated with stacking faults in GaN

O. Brandt, H. Grahn, T. Flissikowski, 2014, 1405.1261.

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency

O. Brandt, H. Grahn, C. Hauswald, 2014, 1408.5263.

Comparison of the Luminous Efficiencies of Ga- and N-Polar In x Ga 1 -x N /In y Ga 1 -y N Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy

M. Albrecht, O. Brandt, C. Hauswald, 2015, 1510.06512.

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

E. Monroy, C. Bougerol, J. Lähnemann, 2017, 1903.09375.

Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

H. Grahn, B. Jenichen, U. Jahn, 2013, 1301.4138.

Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Implications for Light-Emitting Devices

O. Brandt, M. Ramsteiner, J. Herranz, 2022, ACS Applied Nano Materials.

Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing

O. Bierwagen, J. Varley, J. Lähnemann, 2022, Applied Physics Letters.

Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities

K. Sabelfeld, O. Brandt, V. Kaganer, 2019, Physical Review Applied.

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions

C. Bougerol, E. Monroy, E. Monroy, 2015, 1504.04989.

Luminescent Defects in a Few-Layer h -BN Film Grown by Molecular Beam Epitaxy

P. Santos, A. Hern'andez-M'inguez, J. Lopes, 2018, Physical Review Applied.

Direct experimental determination of the spontaneous polarization of GaN

Oliver Brandt, Achim Trampert, Friedhelm Bechstedt, 2012, 1201.4294.

Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

O. Brandt, M. Ramsteiner, L. Geelhaar, 2012, Physical Review B.

Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires

Abbes Tahraoui, Oliver Brandt, Henning Riechert, 2014, 1410.3709.

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

Oliver Brandt, Achim Trampert, Michael Hanke, 2011, 1109.6039.

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

O. Brandt, T. Flissikowski, C. Skierbiszewski, 2017, 1710.08351.

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

D. Jena, H. Xing, O. Brandt, 2023, 2305.10542.

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

D. Jena, H. Xing, O. Brandt, 2023, APL Materials.

Validation of Satellite Ozone Measurements Over Nairobi Using MAX-DOAS 2003-2004

J. Lahnemann, 2005 .

Current path in light emitting diodes based on nanowire ensembles

C. Hauswald, L. Geelhaar, F. Limbach, 2012, Nanotechnology.