C. Dua

发表

Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers

O. Noblanc, F. Meyer, V. Aubry-Fortuna, 1999 .

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

S. Delage, G. Meneghesso, F. Rampazzo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Testing the Temperature Limits of GaN-Based HEMT Devices

Christian Dua, Nicolas Grandjean, David Maier, 2010, IEEE Transactions on Device and Materials Reliability.

Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power

Christian Brylinski, Christian Dua, Farid Temcamani, 2003 .

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

Christian Dua, Ali Soltani, J. Laureyns, 2007 .

High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers

D. Pavlidis, S. Mohammadi, J. Guyaux, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

S. Delage, J. Kováč, J. Jacquet, 2019, Journal of Electronic Packaging.

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

J. Bluet, V. Hoel, N. Malbert, 2010, 2010 IEEE International Reliability Physics Symposium.

Electrical characterization of inhomogeneous Ti:4H-SiC Schottky contacts

O. Noblanc, F. Meyer, D. Defives, 1999 .

Development of InAlN/GaN HEMTs Power Devices in S-Band

S. Delage, J. Jacquet, S. Piotrowicz, 2011, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Temperature dependent degradation modes in AlGaN/GaN HEMTs

J. Bluet, V. Hoel, N. Malbert, 2010, The 5th European Microwave Integrated Circuits Conference.

Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs

O. Noblanc, E. Chartier, C. Dua, 1999 .

Deuterium passivation of electrically active defects in nonintentionally doped n-GaN

S. Delage, M. Forte-Poisson, J. Chevallier, 2007 .

Achievement and perspective of GaN technology for microwave applications

S. Delage, C. Gaquière, J. Jacquet, 2010, 18-th INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS.

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

J. Bluet, N. Sarazin, M. Poisson, 2010 .

Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs

A. Paccagnella, S. Delage, M. Meneghini, 2015 .

InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications

S. Delage, J. Jacquet, S. Piotrowicz, 2017, International Journal of Microwave and Wireless Technologies.

160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management

S. Delage, C. Gaquière, J. Jacquet, 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-Band

S. Delage, J. Jacquet, S. Piotrowicz, 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

S. Delage, V. Palankovski, S. Vitanov, 2012 .

S. Delage, W. Knap, D. Coquillat, 2011 .

Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes

Christian Dua, Mourad Oualli, Sylvain L. Delage, 2018, Microelectron. Reliab..

Wide band gap semiconductor reliability : Status and trends

Christian Dua, Sylvain L. Delage, S. Delage, 2003, Microelectron. Reliab..

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences

Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment

S. Delage, N. Grandjean, C. Dua, 2012, IEEE Electron Device Letters.

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, 2009, Microelectron. Reliab..

Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT

Enrico Zanoni, Sylvain Delage, Christian Dua, 2005 .

Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals

P. Godignon, N. Mestres, E. Morvan, 2004 .

InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz

N. Michel, C. Dua, S. Piotrowicz, 2016, 2016 11th European Microwave Integrated Circuits Conference (EuMIC).

Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy

Sylvain Delage, Christian Dua, B. Dessertenne, 2005 .

ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

C. Dua, S. Piotrowicz, O. Jardel, 2016, IEEE Electron Device Letters.

Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications

Z. Ouarch, S. Delage, D. Floriot, 2010, International Journal of Microwave and Wireless Technologies.

State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers

D. Floriot, T. Reveyrand, O. Drisse, 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters

R. Quéré, S. Delage, J. Jacquet, 2015, International Journal of Microwave and Wireless Technologies.

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

G. Meneghesso, F. Fantini, E. Zanoni, 2008, IEEE Transactions on Device and Materials Reliability.

Development of SiC Devices for Microwave and RF Power Amplifiers

Christian Brylinski, Christian Dua, Alexandre Kerlain, 2004 .

Influence of Material Properties on Wide-Bandgap Microwave Power Device Characteristics

E. Morvan, C. Dua, C. Brylinski, 2003 .

Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

J. Bluet, G. Guillot, E. Morvan, 2004 .

SiC Microwave Power Devices

Christian Brylinski, Christian Dua, O. Noblanc, 2001 .

Evidence of surface states for 4H-SiC MESFETs on semi-insulating substrates by current transient spectroscopy

N. Sghaier, I. Dermoul, F. Chekir, 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).

Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer

Eric Chartier, Christian Brylinski, Christian Dua, 2000 .

Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs

Christian Dua, Mourad Oualli, Dominique Carisetti, 2009, Microelectron. Reliab..

Optimized ohmic contacts for InAlGaN/GaN HEMTs

S. Delage, P. Ruterana, F. Medjdoub, 2022, International Conference on Advanced Semiconductor Devices and Microsystems.

InAlN/GaN HEMTs based L-band high-power packaged amplifiers

Sylvain Delage, Christian Dua, Jean-Claude Jacquet, 2014, International Journal of Microwave and Wireless Technologies.

Drain Current Recovery Time Analyses of InAlGaN/GaN HEMTs Realized with a Back-Barrier Buffer Layer

N. Michel, M. Prigent, E. Chartier, 2019, 2019 14th European Microwave Integrated Circuits Conference (EuMIC).

Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

J. Kováč, E. Morvan, P. Kordos, 2011 .

A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications

Christian Dua, Sylvain L. Delage, A. Sozza, 2005, Microelectron. Reliab..

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

Nathalie Labat, Nathalie Malbert, André Touboul, 2006, Microelectron. Reliab..