Wei Jia

发表

GaN epitaxial layers grown on multilayer graphene by MOCVD

Tianbao Li, Lin Gan, Bing-she Xu, 2018 .

Geometric and electronic structures of non-IPR metallofullerene La@C72

X. Fang, Xuguang Liu, Bing-she Xu, 2007 .

Improvement of light extraction efficiency of GaN-based light-emitting diodes using Ag nanostructure and indium tin oxide grating.

Sui-hu Dang, Tianbao Li, Bing-she Xu, 2012, Optics express.

Ultra-simple two color WOLEDs with CRI exceeding 90 based on electron-transporting Bepp2 simultaneously as blue emitter and exciplex acceptor

Bingshe Xu, Zhixiang Gao, Yingjuan Zhou, 2018, Journal of Luminescence.

Photoluminescence close to V-shaped pits in the quantum wells and enhanced output power for InGaN light emitting diode

Xuguang Liu, Peizhi Liu, Bing-she Xu, 2017 .

Effects of polarization field distribution on photoelectric properties of InGaN light-emitting diodes

Sui-hu Dang, Tianbao Li, Bing-she Xu, 2014 .

Morphological evolution of ZnO microspheres from Zn5(OH)8Ac2·2H2O by ultrasonic irradiation method

G. Shao, Bing-she Xu, Jianwei Liang, 2013 .

Light-extraction enhancement and directional emission control of GaN-based LED with transmission grating

Peide Han, Suihu Dang, Bingshe Xu, 2014 .

The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate

Xuguang Liu, Bing-she Xu, Guangmei Zhai, 2016 .

Solvent-mediated surface ligand exchange to enhance the performance of quantum-dot light-emitting diodes

Bingshe Xu, Yanqin Miao, Hua Wang, 2022, Organic Electronics.

Effects of GaxZn1−xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes

Rui Li, Tianbao Li, Bing-she Xu, 2017 .

p-Cu2O/n-ZnO heterojunction fabricated by hydrothermal method

Sui-hu Dang, Tianbao Li, Xuguang Liu, 2012 .

Evidence of the formation mechanism of ZnO in aqueous solution

Sui-hu Dang, Xuguang Liu, Bing-she Xu, 2012 .

Evolution mechanism of InGaN quantum dots and their optical properties

Kai Qu, Xuguang Liu, Bing-she Xu, 2020 .

Sky-blue phosphorescent organic light-emitting diode with superior performance based on novel chlorine functionalized iridium(III) complex

Bingshe Xu, Peng Tao, Yanqin Miao, 2018 .

Density functional theory of polonium-doped endohedral fullerenes Po@C60

X. Fang, Xuguang Liu, Bing-she Xu, 2007 .

Geometric and electronic structures of new endohedral fullerenes: Eu@C72

X. Fang, Hongbiao Dong, P. Han, 2008, Journal of molecular modeling.

The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits

Tianbao Li, Hailiang Dong, Shufang Ma, 2021 .

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

Tianbao Li, Lin Gan, Hailiang Dong, 2018, Nanoscale Research Letters.

Effect of Indium doping on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes

Rui Li, Tianbao Li, Hailiang Dong, 2018, Superlattices and Microstructures.

Endohedral Regulator for Metallofullerene Chemical Property: Diels–Alder Reaction Studies of ScxY3‐xN@C80‐Ih (x=0‐3)

Lan Wang, Wei Jia, Zhen Guo, 2018 .

CN bond orientation in metal carbonitride endofullerenes: A density functional theory study*

Wei Jia, Wenhua Xue, Zhuxia Zhang, 2017 .

Improved carrier transport and photoelectric properties of InGaN/GaN multiple quantum wells with wider well and narrower barrier

Xuguang Liu, Hailiang Dong, Jianwei Liang, 2020 .

Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip

Peizhi Liu, Dan Han, Hailiang Dong, 2017 .

The morphologies and optical properties of three-dimensional GaN nano-cone arrays

Shufang Ma, Jianwei Liang, Haotian Wang, 2016 .

Theoretical studies on transforming a GaN semiconductor into a photonic crystal under a periodic external magnetic field

Xuguang Liu, Jianwei Liang, P. Han, 2013, Journal of Materials Science.

Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer

Tianbao Li, Hailiang Dong, Wei Jia, 2022, AIP Advances.

Reduction of nonradiative recombination for high-power 808 nm laser diode adopting InGaAsP/InGaAsP/GaAsP active region

Hailiang Dong, Jianwei Liang, Wei Jia, 2023, Optics Communications.

Numerical study on photoelectric properties of semi-polar 101̄1 green InGaN light-emitting diodes with quaternary AlInGaN quantum barriers

Tianbao Li, Hailiang Dong, Wei Jia, 2022, AIP Advances.

Effects of Ag nanoparticles on morphology and photocatalytic activities of GaN microrods arrays

Wei Jia, Yanchun Hu, Yanjie Wei, 2014 .

Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD

Tianbao Li, Hailiang Dong, J. Zhigang, 2018 .

InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure

Hailiang Dong, Jianwei Liang, Wei Jia, 2023, AIP Advances.