H. Fu

发表

Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes

George T. Wang, S. Nakamura, Yuji Zhao, 2018 .

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

D. Vasileska, F. Ponce, H. Chen, 2020, IEEE Transactions on Electron Devices.

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

S. Denbaars, C. Ning, S. Nakamura, 2020, Nano Energy.

High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings

S. Goodnick, F. Ponce, H. Chen, 2020, IEEE Electron Device Letters.

Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings

H. Chen, Xuanqi Huang, Yuji Zhao, 2020, IEEE Journal of the Electron Devices Society.

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

F. Ponce, Hanxiao Liu, Yuji Zhao, 2019, Applied Physics Letters.

Dopant profiling in p-i-n GaN structures using secondary electrons

F. Ponce, Hanxiao Liu, Yuji Zhao, 2019, Journal of Applied Physics.

Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

M. McCartney, F. Ponce, Hanxiao Liu, 2019, Applied Physics Letters.

Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m-plane GaN substrates

Baoshun Zhang, Ke Xu, F. Ponce, 2018, Applied Physics Express.

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

H. Chen, Xuanqi Huang, Yuji Zhao, 2018, IEEE Electron Device Letters.

High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier

S. Denbaars, S. Nakamura, Yuh-Renn Wu, 2015 .

Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect

Zhijian Lu, Yuji Zhao, H. Fu, 2016 .

Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence

S. Denbaars, S. Nakamura, Zhijian Lu, 2016, Journal of Display Technology.

Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating.

Zhijian Lu, H. Chen, Xuanqi Huang, 2016, Optics express.

Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations

Zhijian Lu, H. Chen, Xuanqi Huang, 2017 .

Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes

Zhijian Lu, H. Chen, Xuanqi Huang, 2017, IEEE Electron Device Letters.

Optical Cavity Effects in InGaN Micro-Light-Emitting Diodes With Metallic Coating

Zhijian Lu, H. Chen, Xuanqi Huang, 2017, IEEE Photonics Journal.

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers

Zhijian Lu, H. Chen, Xuanqi Huang, 2017 .

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

Zhijian Lu, H. Chen, Xuanqi Huang, 2017, IEEE Electron Device Letters.

Effect of Proton Radiation on Ultrawide Bandgap AlN Schottky Barrier Diodes

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, IEEE Transactions on Nuclear Science.

Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD

Zhijian Lu, H. Chen, Xuanqi Huang, 2017, IEEE Journal of the Electron Devices Society.

InGaN-based solar cells for space applications

Hong Chen, Zhijian Lu, Xuanqi Huang, 2017, 2017 IEEE 60th International Midwest Symposium on Circuits and Systems (MWSCAS).

On-chip directional octave-spanning supercontinuum generation from high order mode in near ultraviolet to infrared spectrum using AlN waveguides

A. K. Vinod, C. Ning, C. Wong, 2019, 1908.04719.

Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices

F. Ponce, Hanxiao Liu, Yuji Zhao, 2020, Semiconductor Science and Technology.

GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress

H. Chen, A. Neviani, M. Meneghini, 2020 .

Study of Crystalline Defect Induced Optical Scattering Loss inside AlN Waveguides in UV-Visible Spectral Wavelengths

H. Chen, Xuanqi Huang, Yuji Zhao, 2019 .

Characterizations of the nonlinear optical properties for (010) and (2¯01) beta-phase gallium oxide.

H. Chen, Xuanqi Huang, Yuji Zhao, 2017, Optics express.

Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II

T. Palacios, Yuji Zhao, K. Fu, 2021, IEEE Transactions on Electron Devices.

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

David J. Smith, S. Goodnick, H. Chen, 2020, IEEE Journal of the Electron Devices Society.

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

F. Ponce, H. Chen, Hanxiao Liu, 2018, Applied Physics Letters.

Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping

S. Long, Yuji Zhao, Rajendra Singh, 2020, Journal of Physics D: Applied Physics.

Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension

Yuji Zhao, K. Fu, H. Fu, 2021, Semiconductor Science and Technology.

External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy

R. Nemanich, Yuji Zhao, K. Fu, 2022, Journal of Applied Physics.

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

Baoshun Zhang, Guohao Yu, K. Fu, 2022, Electronics.

Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, Journal of Semiconductors.

Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing

David J. Smith, Yuji Zhao, K. Fu, 2021, IEEE Electron Device Letters.

Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications

Yuji Zhao, H. Fu, D. Mudiyanselage, 2022, Journal of Applied Physics.

Radiation Effects in Ultra-Wide Bandgap AlN Schottky Diodes

H. Chen, Xuanqi Huang, Yuji Zhao, 2018 .

MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

A. Neal, A. Osinsky, S. Mou, 2020 .

Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing m-plane GaN substrates

Baoshun Zhang, Ke Xu, F. Ponce, 2018, Applied Physics Express.

Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, IEEE Electron Device Letters.

Characterizations of the nonlinear optical properties for (010) and (2¯01) beta-phase gallium oxide.

H. Chen, Xuanqi Huang, Yuji Zhao, 2017, Optics express.

A Comparative Study on the Electrical Properties of Vertical ( $\bar{\sf2}01$ ) and (010) $\beta$ -Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates

H. Chen, Xuanqi Huang, Yuji Zhao, 2018, IEEE Transactions on Electron Devices.

High-Photoresponsivity Self-Powered a-, ε-, and β-Ga2O3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD.

H. Fu, Xiaodong Zhang, Xin Zhou, 2022, ACS applied materials & interfaces.

Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

M. Meneghini, G. Meneghesso, E. Zanoni, 2022, Journal of Applied Physics.

The Mechanism of Performance Variations in MoS2 Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory

Xingqiang Liu, Guoxia Liu, Xuming Zou, 2022, IEEE Transactions on Electron Devices.

Self‐Powered and Spectrally Distinctive Nanoporous Ga 2 O 3 /GaN Epitaxial Heterojunction UV Photodetectors

Baoshun Zhang, Yaming Fan, Yong Cai, 2021, Advanced Photonics Research.

Toward High Efficiency at High Temperatures: Recent Progress and Prospects on InGaN-Based Solar Cells

Hongxing Jiang, Xuanqi Huang, Yuji Zhao, 2022, Materials Today Energy.

Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK.

Xiaoyan Liu, Hong Chen, Zhijian Lu, 2017, Optics express.

Mis-cut direction of substrate effect on the photoresponse characteristic of β-Ga2O3 film

Baoshun Zhang, H. Fu, Xiaodong Zhang, 2022, Vacuum.

X-ray topography characterization of gallium nitride substrates for power device development

A. Allerman, M. Dudley, Yuji Zhao, 2020, Journal of Crystal Growth.

Effect of HAc treatment on an open-environment prepared organic redox couple based on hydroquinone/benzoquinone and its application in dye-sensitized solar cells

Xingzhong Zhao, Shi-shang Guo, N. Huang, 2013 .

Ultrawide bandgap vertical β-(AlxGa1−x)2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

H. Fu, D. Mudiyanselage, Dawei Wang, 2023, Journal of Vacuum Science & Technology A.

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

R. Nemanich, Yuji Zhao, K. Fu, 2021, Applied Physics Letters.

Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well

Zhijian Lu, H. Chen, Xuanqi Huang, 2017 .

Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications

Zhijian Lu, H. Chen, Xuanqi Huang, 2016 .

Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, Applied Physics Letters.

Supercontinuum Generation in High Order Waveguide Mode with near-Visible Pumping Using Aluminum Nitride Waveguides

A. K. Vinod, C. Ning, C. Wong, 2021, ACS Photonics.

Development of AlN integrated photonic platform for octave-spanning supercontinuum generation in visible spectrum

H. Chen, Yuji Zhao, H. Fu, 2021, Ultrawide Bandgap Semiconductors.

Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV-visible spectral wavelengths using volume current method.

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, Optics express.

Study of Crystalline Defect Induced Optical Scattering Loss inside AlN Waveguides in UV-Visible Spectral Wavelengths

Xuanqi Huang, Yuji Zhao, Hong Chen, 2019, 2019 Conference on Lasers and Electro-Optics (CLEO).

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

David J. Smith, S. Goodnick, R. Nemanich, 2021, Applied Physics Letters.

High-performance β-Ga2O3 solar-blind ultraviolet photodetectors epitaxially grown on (110) TiO2 substrates by metalorganic chemical vapor deposition

Baoshun Zhang, T. He, H. Fu, 2021 .

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

H. Barnaby, M. Kozicki, R. Fang, 2019, Nanotechnology.

High-performance ε-Ga2O3 solar-blind ultraviolet photodetectors on Si (100) substrate with molybdenum buffer layer

Baoshun Zhang, Z. Zeng, H. Fu, 2023, Vacuum.

A Novel PN junction between Mechanically Exfoliated \b{eta}-Ga2O3 and p-GaN

H. Chen, Xuanqi Huang, Yuji Zhao, 2018, 1812.05729.

Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer

Kunpeng Hu, Haiding Sun, H. Fu, 2022, Journal of Physics D: Applied Physics.

Design Space of Delta-Doped β-(AlxGa1-x)2O3/Ga2O3 High-Electron Mobility Transistors

H. Fu, D. Mudiyanselage, Dawei Wang, 2022, IEEE Transactions on Electron Devices.

Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications.

H. Chen, Xuanqi Huang, Yuji Zhao, 2017, Optics express.

Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency

S. Denbaars, S. Nakamura, Zhijian Lu, 2017 .

Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I

T. Palacios, Yuji Zhao, K. Fu, 2021, IEEE Transactions on Electron Devices.

Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling

Shuti Li, H. Fu, Jian Yin, 2022, Electronics.

Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model

H. Chen, Xuanqi Huang, Yuji Zhao, 2016, 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).

High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects

S. Denbaars, C. Ning, S. Nakamura, 2019, ACS Photonics.

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Xuanqi Huang, Houqiang Fu, Jossue Montes, 2018, Applied Physics Letters.

Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress

Zhijian Lu, H. Chen, D. Koleske, 2017 .

Experimental demonstration of non-line-of-sight visible light communication with different reflecting materials using a GaN-based micro-LED and modified IEEE 802.11ac

Yi Liu, Xiaodong Zhang, Li-Rong Zheng, 2018, AIP Advances.

Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

E. Yu, A. Allerman, David J. Smith, 2021, Materials Today.

Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films

F. Ponce, Hanxiao Liu, Yuji Zhao, 2020, Applied Physics Letters.

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ - ${n}$ Junctions With Low Leakage for GaN Power Electronics

Xuanqi Huang, Houqiang Fu, Chen Yang, 2019, IEEE Electron Device Letters.

2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

Baoshun Zhang, Guohao Yu, H. Fu, 2023, IEEE Electron Device Letters.

Effect of off-axis substrate angles on β-Ga2O3 thin films and solar-blind ultraviolet photodetectors grown on sapphire by MOCVD

T. He, Baoshun Zhang, H. Fu, 2021 .

High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant

H. Fu, Xiaodong Zhang, Xin Zhou, 2022, Applied Physics Letters.

Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation

M. Meneghini, G. Meneghesso, E. Zanoni, 2022, Microelectronics Reliability.

Controlled lateral epitaxial growth in vertical β-Ga2O3 nanowires on sapphire by MOCVD

T. He, Baoshun Zhang, Junshuai Li, 2021, Journal of Physics D: Applied Physics.

Demonstration of Low Loss β-Ga2O3 Optical Waveguides in the UV-NIR Spectra

Baoshun Zhang, H. Chen, Xuanqi Huang, 2019, 2020 Conference on Lasers and Electro-Optics (CLEO).

Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga2O3

H. Chen, Xuanqi Huang, Yuji Zhao, 2020 .

Microneural Network System Based on MoS2/h-BN/Graphene van der Waals Heterojunction Transistor

Zhenyu Yang, Xingqiang Liu, F. Shan, 2023, ACS Applied Nano Materials.

Surface-plasmon-enhanced MoS2 multifunctional optoelectronic memory for emulating human retinal imaging

Zhenyu Yang, Xingqiang Liu, F. Shan, 2023, Applied Physics Letters.

Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating.

Zhijian Lu, H. Chen, Xuanqi Huang, 2016, Optics express.

Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications.

H. Chen, Xuanqi Huang, Yuji Zhao, 2017, Optics express.

Picosecond magneto-optic thermometry measurements of nanoscale thermal transport in AlN thin films

Yuji Zhao, Mingfei Xu, Richard B. Wilson, 2023, APL Materials.

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

H. Barnaby, M. Kozicki, R. Fang, 2019, Nanotechnology.

Degradation of GaN-based InGaN-GaN MQWs solar cells caused by thermally-activated diffusion

M. Meneghini, G. Meneghesso, E. Zanoni, 2023, OPTO.

Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells

M. Meneghini, G. Meneghesso, E. Zanoni, 2023, IEEE Transactions on Electron Devices.

Epitaxial Growth of Ga2O3: A Review

H. Fu, D. Mudiyanselage, I. Rahaman, 2024, Materials.