Jossue A. Montes

发表

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

D. Vasileska, F. Ponce, H. Chen, 2020, IEEE Transactions on Electron Devices.

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

S. Denbaars, C. Ning, S. Nakamura, 2020, Nano Energy.

High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings

S. Goodnick, F. Ponce, H. Chen, 2020, IEEE Electron Device Letters.

Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings

H. Chen, Xuanqi Huang, Yuji Zhao, 2020, IEEE Journal of the Electron Devices Society.

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

H. Chen, Xuanqi Huang, Yuji Zhao, 2018, IEEE Electron Device Letters.

Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations

Zhijian Lu, H. Chen, Xuanqi Huang, 2017 .

Optical Cavity Effects in InGaN Micro-Light-Emitting Diodes With Metallic Coating

Zhijian Lu, H. Chen, Xuanqi Huang, 2017, IEEE Photonics Journal.

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

Zhijian Lu, H. Chen, Xuanqi Huang, 2017, IEEE Electron Device Letters.

Effect of Proton Radiation on Ultrawide Bandgap AlN Schottky Barrier Diodes

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, IEEE Transactions on Nuclear Science.

InGaN-based solar cells for space applications

Hong Chen, Zhijian Lu, Xuanqi Huang, 2017, 2017 IEEE 60th International Midwest Symposium on Circuits and Systems (MWSCAS).

On-chip directional octave-spanning supercontinuum generation from high order mode in near ultraviolet to infrared spectrum using AlN waveguides

A. K. Vinod, C. Ning, C. Wong, 2019, 1908.04719.

Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices

F. Ponce, Hanxiao Liu, Yuji Zhao, 2020, Semiconductor Science and Technology.

Characterizations of the nonlinear optical properties for (010) and (2¯01) beta-phase gallium oxide.

H. Chen, Xuanqi Huang, Yuji Zhao, 2017, Optics express.

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

David J. Smith, S. Goodnick, H. Chen, 2020, IEEE Journal of the Electron Devices Society.

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

F. Ponce, H. Chen, Hanxiao Liu, 2018, Applied Physics Letters.

Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension

Yuji Zhao, K. Fu, H. Fu, 2021, Semiconductor Science and Technology.

Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, Journal of Semiconductors.

Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing

David J. Smith, Yuji Zhao, K. Fu, 2021, IEEE Electron Device Letters.

Radiation Effects in Ultra-Wide Bandgap AlN Schottky Diodes

H. Chen, Xuanqi Huang, Yuji Zhao, 2018 .

Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, IEEE Electron Device Letters.

Characterizations of the nonlinear optical properties for (010) and (2¯01) beta-phase gallium oxide.

H. Chen, Xuanqi Huang, Yuji Zhao, 2017, Optics express.

A Comparative Study on the Electrical Properties of Vertical ( $\bar{\sf2}01$ ) and (010) $\beta$ -Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates

H. Chen, Xuanqi Huang, Yuji Zhao, 2018, IEEE Transactions on Electron Devices.

Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK.

Xiaoyan Liu, Hong Chen, Zhijian Lu, 2017, Optics express.

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

R. Nemanich, Yuji Zhao, K. Fu, 2021, Applied Physics Letters.

Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, Applied Physics Letters.

Supercontinuum Generation in High Order Waveguide Mode with near-Visible Pumping Using Aluminum Nitride Waveguides

A. K. Vinod, C. Ning, C. Wong, 2021, ACS Photonics.

Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV-visible spectral wavelengths using volume current method.

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, Optics express.

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

David J. Smith, S. Goodnick, R. Nemanich, 2021, Applied Physics Letters.

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

H. Barnaby, M. Kozicki, R. Fang, 2019, Nanotechnology.

A Novel PN junction between Mechanically Exfoliated \b{eta}-Ga2O3 and p-GaN

H. Chen, Xuanqi Huang, Yuji Zhao, 2018, 1812.05729.

Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications.

H. Chen, Xuanqi Huang, Yuji Zhao, 2017, Optics express.

Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency

S. Denbaars, S. Nakamura, Zhijian Lu, 2017 .

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Xuanqi Huang, Houqiang Fu, Jossue Montes, 2018, Applied Physics Letters.

Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress

Zhijian Lu, H. Chen, D. Koleske, 2017 .

Experimental demonstration of non-line-of-sight visible light communication with different reflecting materials using a GaN-based micro-LED and modified IEEE 802.11ac

Yi Liu, Xiaodong Zhang, Li-Rong Zheng, 2018, AIP Advances.

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ - ${n}$ Junctions With Low Leakage for GaN Power Electronics

Xuanqi Huang, Houqiang Fu, Chen Yang, 2019, IEEE Electron Device Letters.

Demonstration of Low Loss β-Ga2O3 Optical Waveguides in the UV-NIR Spectra

Baoshun Zhang, H. Chen, Xuanqi Huang, 2019, 2020 Conference on Lasers and Electro-Optics (CLEO).

Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga2O3

H. Chen, Xuanqi Huang, Yuji Zhao, 2020 .

Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications.

H. Chen, Xuanqi Huang, Yuji Zhao, 2017, Optics express.

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

H. Barnaby, M. Kozicki, R. Fang, 2019, Nanotechnology.