Prudhvi Peri

发表

Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power p-n Diodes

David J. Smith, R. Nemanich, Yuji Zhao, 2020, Microscopy and Microanalysis.

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

P. R. Berger, David J. Smith, E. Brown, 2020 .

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

David J. Smith, S. Goodnick, H. Chen, 2020, IEEE Journal of the Electron Devices Society.

Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing

David J. Smith, Yuji Zhao, K. Fu, 2021, IEEE Electron Device Letters.

Structural, electrical, and electromagnetic properties of nanostructured vanadium dioxide thin films

S. Dey, R. Katiyar, G. Subramanyam, 2021, Thin Film Nanophotonics.

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

David J. Smith, S. Goodnick, R. Nemanich, 2021, Applied Physics Letters.

Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

P. R. Berger, David J. Smith, E. Brown, 2020 .

Physicochemical Characterization of PZT-Based Ultrasonic Transducer Stacks

Prudhvi Peri, 2018 .

Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

E. Yu, A. Allerman, David J. Smith, 2021, Materials Today.