S. Yamaguchi

发表

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

A. Uedono, S. Denbaars, S. Kamiyama, 2006, Nature materials.

Intrinsic luminescence excitation spectra near the K and Cl 1s edges in KCl and KBr

Y. Kondo, M. Yanagihara, S. Yamaguchi, 1988 .

Impact of temperature dependence of resistivity on thermal time constant of direct‐current‐driven Peltier device

S. Yamaguchi, Toru Anzai, 2017 .

Photopumped lasing properties in ZnCdSe—ZnSSe multiple quantum wells

Y. Kawakami, S. Fujita, K. Ichino, 1994 .

Optical Properties of Ag-Based 3d-Transition Metal Alloys I. Virtual Bound States in Ag-Matrix

S. Yamaguchi, T. Hanyu, H. Koike, 1975 .

Preparation of Large Crystals of Photoactive Yellow Protein for Neutron Diffraction and High Resolution Crystal Structure Analysis †

N. Shimizu, H. Kamikubo, M. Kataoka, 2007, Photochemistry and photobiology.

Control of strain in GaN by a combination of H2 and N2 carrier gases

H. Amano, I. Akasaki, S. Nitta, 2001 .

Theory of the Optical Properties of Very Thin Inhomogeneous Films

S. Yamaguchi, 1962 .

The Resonance Type Absorption of Very Thin Silver and Gold Films

S. Yamaguchi, 1960 .

Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques

A. Uedono, S. Denbaars, S. Kamiyama, 2007 .

The optical absorption of the alloy AuV in the far-infrared

H. Ohkuma, S. Yamaguchi, 1987 .

Extreme Ultraviolet Absorption Spectra of Barium and Rare Earth Metals

H. Ohkuma, H. Kato, S. Yamaguchi, 1984 .

Mass transport and the reduction of threading dislocation in GaN

H. Amano, I. Akasaki, T. Kashima, 2000 .

The Valence Band Spectra of AgRu, AgRh and AgPd Alloys

S. Yamaguchi, T. Hanyu, H. Ishii, 1978 .

Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices

H. Amano, I. Akasaki, S. Nitta, 2001 .

Microscopic Investigation of Al0.43Ga0.57N on Sapphire

H. Amano, I. Akasaki, Takayuki Kashima, 1999 .

Dielectric constants of C60 and C70 thin films

H. Kataura, Y. Achiba, K. Kikuchi, 1997 .

Extreme Ultraviolet Absorption Spectra of Alkali Metals

T. Ishii, Shigeru Sato, S. Yamaguchi, 1979 .

Optical Properties of Potassium

S. Yamaguchi, T. Hanyu, 1971 .

In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology

H. Amano, I. Akasaki, M. Iwaya, 2002 .

Thermoelectric properties of Al1−xInxN and Al1−y−zGayInzN prepared by radio-frequency sputtering: Toward a thermoelectric power device

A. Yamamoto, S. Yamaguchi, Y. Iwamura, 2003 .

Fabrication of Thermoelectric Devices Using AlInN and InON Films prepared by reactive radio-frequency sputtering

A. Yamamoto, S. Yamaguchi, Ryohei Izaki, 2003 .

Thermal and thermoelectric properties of III-nitride and III-oxynitride films prepared by reactive RF sputtering

A. Yamamoto, S. Yamaguchi, Ryohei Izaki, 2003 .

Thermoelectric Properties of Electrically Conductive III-Oxynitrides of Al1-xInxOsNt and InOsNt Prepared by Radio-Frequency Reactive Sputtering: Toward a Thermopower Device

A. Yamamoto, S. Yamaguchi, Y. Iwamura, 2002 .

Thermoelectric properties of III-nitrides and III-oxynitrides prepared by reactive rf-sputtering: targetting a thermopower device

A. Yamamoto, S. Yamaguchi, Y. Iwamura, 2002 .

X-Ray Photoemission Spectroscopy of Nd2-xCexCuO4-y and La2-xSrxCuO4

H. Kataura, S. Yamaguchi, K. Mizoguchi, 1989 .

Low-barrier hydrogen bond in photoactive yellow protein

Kazuo Kurihara, Yoichi Yamazaki, Hironari Kamikubo, 2009, Proceedings of the National Academy of Sciences.

Thermoelectric properties and figure of merit of a Te-doped InSb bulk single crystal

A. Yamamoto, S. Yamaguchi, Takayuki Matsumoto, 2005 .

Thermoelectric properties of InSb and Ga0.03In0.97Sb thin films grown by metalorganic vapor-phase epitaxy

A. Yamamoto, S. Yamaguchi, Nakaba Kaiwa, 2005 .

Optical Properties of Ag-Based 3d-Transition Metal Alloys. II. Effects of Alloying on the Characteristic Absorption of Ag

S. Yamaguchi, T. Hanyu, H. Koike, 1976 .

Optical Properties of Silver Films–Direct Observation of the \(\textIm\) 1/ε-Spectrum

S. Yamaguchi, 1963 .

Photoelectron Spectra of Pure Rh Metal and CuRh Alloys

S. Yamaguchi, T. Miyahara, T. Hanyu, 1984 .

Soft X-Ray Absorption Spectra of Metals and Alloys. I. Be, Al, Sb, Bi and Al-Mg Alloys

T. Oshio, S. Yamaguchi, Taizo Sasaki, 1966 .

Threshold Singularities of p-shell Absorption in Potassium, Rubidium and Cesium Metals

T. Ishii, S. Yamaguchi, T. Hanyu, 1977 .

Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy

H. Amano, I. Akasaki, S. Nitta, 2000 .

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

S. Yamaguchi, T. Ishii, H. Homma, 2011 .

The Effect of a Buffer Layer on the Electric Properties of InSb Thin Films Grown by Metalorganic Vapor Phase Epitaxy

S. Yamaguchi, T. Ishii, H. Homma, 2011 .

Stress reduction and electric properties of InSb thin films grown by metalorganic vapor phase epitaxy on sapphire substrates with an InAs buffer layer

M. Matsumoto, S. Yamaguchi, 2010 .

Thermoelectric properties and thermoelectric devices of free-standing GaN and epitaxial GaN layer

A. Yamamoto, S. Yamaguchi, M. Hoshino, 2007 .

Thermoelectric and Electrical Properties of InSb Thin Films Prepared by Metalorganic Chemical Vapor Deposition

M. Matsumoto, S. Yamaguchi, J. Yamazaki, 2006 .

Thermoelectric devices using InN and Al1−xInxN thin films prepared by reactive radio-frequency sputtering

A. Yamamoto, S. Yamaguchi, Ryohei Izaki, 2004 .

Thermal diffusivity and thermoelectric figure of merit of Al1−xInxN prepared by reactive radio-frequency sputtering

Atsushi Yamamoto, Ryohei Izaki, Shigeo Yamaguchi, 2003 .

The Optical Properties of Rb

S. Yamaguchi, T. Hanyu, 1973 .

Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn0.80Cd0.20Se-ZnS0.08Se0.92 Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy

Yi-hong Wu, Y. Kawakami, K. Ichino, 1991 .

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

Shigeru Nakagawa, Isamu Akasaki, Hiroshi Amano, 1998 .

Cl− L23 absorption spectra of alkali chlorides obtained at 80°K with synchrotron radiation

T. Oshio, Shigeru Sato, Makoto Watanabe, 1968 .

Vacuum Ultraviolet Absorption Spectra of La, Ce, Sm, Eu and Gd Metals

H. Ohkuma, S. Yamaguchi, T. Miyahara, 1982 .

Soft X-Ray Absorption Spectra of Alkali Halides. I. KCl and NaCl

T. Oshio, S. Yamaguchi, Taizo Sasaki, 1966 .

Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

Isamu Akasaki, Hiroshi Amano, Shugo Nitta, 1999 .

Optical band gap in Ga1−xInxN (0

Isamu Akasaki, Hiroshi Amano, Christian Wetzel, 1998 .

Absorption spectra of KCl and RbCl in the extreme ultraviolet region

H. Saito, Shigeru Sato, Makoto Watanabe, 1970 .

Crystal Growth of High‐Quality AlInN/GaN Superlattices and of Crack‐Free AlN on GaN: Their Possibility of High Electron Mobility Transistor

H. Amano, I. Akasaki, Tetsuya Nakamura, 2001 .

Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano, 1998 .

Anomaly of L23 absorption edges in Al and Mg metals

M. Saruwatari, S. Yamaguchi, A. Ejiri, 1970 .

Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant

J. Bergman, H. Amano, I. Akasaki, 2000 .

Extreme Ultraviolet Absorption Spectra of K-Rb and K-Cs alloys

T. Ishii, Shigeru Sato, S. Yamaguchi, 1980 .

Fabrication of a unipolar Peltier device using a pair of N-type thermoelectric materials

S. Yamaguchi, H. Homma, 2014 .

Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

Satoshi Kamiyama, Isamu Akasaki, Takayuki Sota, 2003 .

Soft X-Ray Absorption and Electronic Structure of Al-Based 3d-Transition Metal Alloys

Shigeru Sato, S. Yamaguchi, T. Hanyu, 1979 .

Time-resolved spectroscopy of biexciton luminescence in wide-bandgap II-VI quantum wells

Y. Masumoto, Y. Kawakami, S. Fujita, 1994 .

The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy

H. Amano, I. Akasaki, S. Nitta, 2000 .

Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy.

H. Amano, I. Akasaki, S. Nitta, 2000 .

Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy

H. Amano, I. Akasaki, S. Nitta, 1999 .

Crystalline and Electrical Properties of AlInN/GaN and AlN/GaN superlattices on GaN Grown by Metalorganic Vapor Phase Epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2001 .

Mosaic Structure of Ternary Al 1-xInxN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy

H. Amano, I. Akasaki, S. Nitta, 1999 .

Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2002 .

Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant

J. Bergman, H. Amano, I. Akasaki, 2001 .

Control of crystalline quality of MOVPE-grown GaN and (Al, Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas

H. Amano, I. Akasaki, T. Kashima, 2000 .

On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Control of strain in GaN using an In doping-induced hardening effect

H. Amano, I. Akasaki, T. Kashima, 2001 .

Optical Properties of Cs

S. Yamaguchi, T. Hanyu, 1974 .

Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy

Y. Kawakami, S. Yamaguchi, H. Kurusu, 1996 .

Thermoelectric properties and a device based on n-InSb and p-InAs

A. Yamamoto, S. Yamaguchi, Takayuki Matsumoto, 2007 .

Thermoelectric properties of and devices based on free-standing GaN

A. Yamamoto, S. Yamaguchi, Ryohei Izaki, 2005 .

Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers

H. Amano, I. Akasaki, S. Yamaguchi, 2002 .

Structural Properties of Nitrides Grown by Omvpe on Sapphire Substrate

H. Amano, I. Akasaki, T. Takeuchi, 1997 .

Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy

Isamu Akasaki, Hiroshi Amano, Shugo Nitta, 2000 .

Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

S. Yamaguchi, T. Ishiguro, Y. Iwamura, 2003 .

GaN Based Laser Diode with Focused Ion Beam Etched Mirrors

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

The Optical Absorption of Heat Treated Very Thin Silver Films and Its Dependence on the Angle of Incidence

S. Yamaguchi, 1962 .

Characterization of local structures around In atoms in Ga1−xInx layers by fluorescence EXAFS measurements

H. Amano, I. Akasaki, S. Yamaguchi, 2002 .

MOVPE growth and characterization of Al1−xInxN/GaN multiple layers

H. Amano, I. Akasaki, Tetsuya Nakamura, 2002 .

Structural characterization of Al1−xInxN lattice-matched to GaN

H. Amano, I. Akasaki, T. Kashima, 2000 .

GaN Based Laser Diode with Focused Ion Beam Etched Mirrors

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Intrinsic luminescence excitation spectrum around the Cl 1s absorption edge in KCl

Y. Kondo, M. Yanagihara, S. Yamaguchi, 1991 .