Tadao Hashimoto

发表

A GaN bulk crystal with improved structural quality grown by the ammonothermal method.

S. Nakamura, J. Speck, Feng Wu, 2007, Nature materials.

Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia

S. Nakamura, K. Fujito, J. Speck, 2005 .

Ammonothermal Growth of GaN on an over-1-inch Seed Crystal

S. Nakamura, M. Saito, K. Fujito, 2005 .

Seeded growth of GaN by the basic ammonothermal method

S. Nakamura, M. Saito, K. Fujito, 2007 .

Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production

R. Dupuis, Chuan-Wei Tsou, S. Shen, 2019, Materials.

Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method

Benjamin S. Jordan, Tadao Hashimoto, D. Key, 2019, Japanese Journal of Applied Physics.

X-ray characterization technique for the assessment of surface damage in GaN wafers

Benjamin S. Jordan, Yimeng Sun, Tadao Hashimoto, 2018, Journal of Crystal Growth.

Reduction of crack density in ammonothermal bulk GaN growth

Tadao Hashimoto, D. Key, E. Letts, 2016 .

Development of GaN wafers via the ammonothermal method

Tadao Hashimoto, D. Key, E. Letts, 2014 .

Development of GaN wafers for solid-state lighting via the ammonothermal method

Tadao Hashimoto, E. Letts, M. Ikari, 2012 .

Improvement of structural quality in the initial stage of GaN growth by basic ammonothermal method

Tadao Hashimoto, E. Letts, M. Ikari, 2011 .

Growth of AlN by the Chemical Vapor Reaction Process

S. Nakamura, K. Fujito, J. Speck, 2005 .

Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates

S. Nakamura, K. Fujito, J. Speck, 2004 .

Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth

Tadao Hashimoto, E. Letts, 2011 .

In-situ RHEED observation on surface reactions in laser-triggered chemical beam epitaxy of GaP

H. Matsunami, P. Vaccaro, M. Yoshimoto, 1994 .

In-situ reflection high-energy electron diffraction observation of laser-triggered GaP growth in chemical beam epitaxy

H. Matsunami, P. Vaccaro, M. Yoshimoto, 1994 .

Laser decomposition of surface adsorbed metalorganics in MOMBE growth of GaP

H. Matsunami, P. Vaccaro, M. Yoshimoto, 1994 .

Reflection high‐energy electron diffraction observation of surface reaction triggered by pulsed laser irradiation during GaP growth in chemical beam epitaxy

H. Matsunami, P. Vaccaro, M. Yoshimoto, 1993 .

Status and perspectives of the ammonothermal growth of GaN substrates

S. Nakamura, M. Saito, K. Fujito, 2008 .

Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient

S. Nakamura, J. Speck, Feng Wu, 2007 .

Structural investigation of sapphire surface after nitridation

M. Ishida, Tadao Hashimoto, O. Imafuji, 1998 .

Characterization of hydrogenated amorphous silicon-carbon films deposited by hybrid-plasma CVD

T. Fuyuki, H. Matsunami, T. Fujii, 1994 .

Defect structure of a free standing GaN wafer grown by the ammonothermal method

H. Jussila, H. Lipsanen, S. Sintonen, 2014 .

Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition

M. Ishida, Tadao Hashimoto, O. Imafuji, 1999 .

GaN Substrate development through the near equilibrium ammonothermal (NEAT) method and its application to higher performance GaN-based devices

Eric Shang, Benjamin Jordan, Tadao Hashimoto, 2019, OPTO.

A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method

S. Nakamura, Tadao Hashimoto, 2010 .

Growth of Bulk GaN Crystals by the Basic Ammonothermal Method

James S. Speck, Shuji Nakamura, Feng Wu, 2007 .

Phase selection of microcrystalline GaN synthesized in supercritical ammonia

James S. Speck, Shuji Nakamura, Tadao Hashimoto, 2006 .

Growth of gallium nitride via fluid transport in supercritical ammonia

S. Nakamura, K. Fujito, J. Speck, 2005 .

Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method

James S. Speck, Shuji Nakamura, Feng Wu, 2007 .

Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy

M. Ishida, Tadao Hashimoto, O. Imafuji, 1999 .

Ammonothermal growth of bulk GaN

James S. Speck, Shuji Nakamura, Feng Wu, 2008 .

Inheritance of zinc-blende structure from 3CSiCSi(001) substrate in growth of GaN by MOCVD

M. Ishida, Tadao Hashimoto, O. Imafuji, 1996 .

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

T. Laurence, R. Dupuis, Matthias A. Daeumer, 2023, IEEE Transactions on Electron Devices.

Evaluation of GaN substrates grown in supercritical basic ammonia

D. S. Kamber, S. Denbaars, S. Nakamura, 2009 .

Studies on lactate dehydrogenase in adult female rabbit genital organs

Tadao Hashimoto, 1975 .