S. Nagao

发表

High‐quality nonpolar m ‐plane GaN substrates grown by HVPE

K. Fujito, K. Kiyomi, Tae Mochizuki, 2008 .

K. Fujito, S. Kubo, H. Nagaoka, 2009 .

Weakly Index Guided Buried-Stripe Type 980 nm Laser Diodes Grown by a Combination of Gas Source Molecular Beam Epitaxy and Metalorganic Vapor Phase Epitaxy with an AlGaAs/InGaP/GaAs Double Etch Stop Structure

K. Shimoyama, S. Nagao, H. Horie, 1999 .

Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

T. Kimoto, J. Suda, K. Shimoyama, 2010 .

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

A. Uedono, K. Fujito, S. Chichibu, 2012 .

Layer-by-layer growth mechanism of AlxGa1-xP grown by gas-source MBE

H. Gotoh, S. Nagao, T. Fujimori, 1993 .

Selective-area growth of GaN on non- and semi-polar bulk GaN substrates

K. Hiramatsu, H. Miyake, S. Nagao, 2014 .

Selective Area Growth of Semipolar (202̄1) and (202̄1̄) GaN Substrates by Metalorganic Vapor Phase Epitaxy

K. Hiramatsu, H. Miyake, S. Nagao, 2013 .

Radiative decay in type-II GaP/AlP/GaP quantum wells

H. Gotoh, Hiroshi Ito, K. Fujii, 1997 .

Reflection High-Energy Electron Diffraction Intensity Oscillation — An Effective Tool of Si and GexSi1-x Molecular Beam Epitaxy

Y. Bando, G. Hashiguchi, K. Sakamoto, 1987 .

Reflection High-Energy Electron Diffraction Intensity Oscillations during GexSi1-x MBE Growth on Si(001) Substrates

Y. Bando, T. Sakamoto, S. Nagao, 1987 .

High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds

H. Matsumoto, K. Fujito, S. Kubo, 2016 .

The effect of oxygen incorporation on interfacial recombination in GaInP/AlGaInP double heterostructures grown by molecular beam epitaxy using a solid phosphorus valved cell

H. Gotoh, Hiroshi Ito, T. Kuroda, 1999 .

Room temperature growth of semipolar AlN (1$ \bar 1 $02) films on ZnO (1$ \bar 1 $02) substrates by pulsed laser deposition

H. Fujioka, J. Ohta, K. Ueno, 2009 .

Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers

H. Fujioka, J. Ohta, K. Ueno, 2007 .

Spatio-Time-Resolved Cathodoluminescence Studies on Freestanding GaN Substrates Grown by Hydride Vapor Phase Epitaxy

A. Uedono, K. Fujito, S. Chichibu, 2013 .

Possible origin of double-peak emission in InGaN quantum wells on m-plane free-standing GaN substrates

A. Yamaguchi, S. Nagao, K. Kurihara, 2016 .

Abruptness of GaAs/AlInP hetero-interfaces grown by GS-MBE

H. Gotoh, S. Nagao, M. Takashima, 1991 .

Observation of Si(001) Vicinal Surfaces on RHEED

K. Miki, K. Sakamoto, T. Sakamoto, 1989 .

Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer

K. Fujito, Hyun-Yong Lee, J. Ha, 2009 .

Residual impurities originating from AsH3 in GS-MBE grown GaAs

H. Gotoh, S. Nagao, Yuichi Inoue, 1991 .

Growth of a-plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer

Hideyoshi Horie, Satoru Nagao, Jitsuo Ohta, 2007 .

Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun

K. Fujito, S. Chichibu, K. Furusawa, 2013 .

Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

Kentaro Furusawa, Satoru Nagao, K. Hazu, 2012 .

Type-II photoluminescence from GaP/AlP/GaP quantum wells

H. Gotoh, Hiroshi Ito, S. Koshihara, 1997 .

InAs/GaInP self-assembled quantum dots: molecular beam epitaxial growth and optical properties

H. Sakaki, S. Nagao, H. Amanai, 2001 .

Fabrication of quantum wire structures by in-situ gas etching and selective-area metalorganic vapor phase epitaxy regrowth

H. Gotoh, K. Fujii, K. Kiyomi, 1994 .

Room‐temperature epitaxial growth of high‐quality m ‐plane InGaN films on ZnO substrates

Masaharu Oshima, Hideyoshi Horie, Satoru Nagao, 2009 .