Fan Zhang

发表

Hexagonal-based pyramid void defects in GaN and InGaN

H. Morkoç, A. Yankovich, A. Kvit, 2012 .

GaN-Based Vertical Cavities with All Dielectric Reflectors by Epitaxial Lateral Overgrowth

H. Morkoç, V. Avrutin, Ü. Özgür, 2013 .

Impact of active layer design on InGaN radiative recombination coefficient and LED performance

H. Morkoç, V. Avrutin, Ü. Özgür, 2012 .

Modulated Photoluminescence Mapping of Long-Wavelength Infrared InAs / GaSb Type-II Superlattice: In-Plane Optoelectronic Uniformity

Xiren Chen, J. Shao, Shumin Wang, 2021 .

Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelback channel

H. Morkoç, V. Avrutin, Ü. Özgür, 2012 .

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

B. Guizal, H. Morkoç, T. Bretagnon, 2014 .

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

B. Guizal, H. Morkoç, T. Bretagnon, 2014 .

Suspended photonic crystal membranes in AlGaAs heterostructures for integrated multi-element optomechanics

W. Wieczorek, P. Tassin, Fan Zhang, 2020, 2004.12454.

Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

Hadis Morkoç, Ümit Özgür, Fan Zhang, 2015, Photonics West - Optoelectronic Materials and Devices.

Thickness Variations and Absence of Lateral Compositional Fluctuations in Aberration-Corrected STEM Images of InGaN LED Active Regions at Low Dose

H. Morkoç, A. Yankovich, A. Kvit, 2014, Microscopy and Microanalysis.

First-principle calculation of the electronic structures and optical properties of the metallic and nonmetallic elements-doped ZnO on the basis of photocatalysis

Zhuoyuan Chen, Xiang-bo Li, Fan Zhang, 2019, Physica B: Condensed Matter.

Ultrafast carbon nanotube photodetectors with a zero bias bandwidth over 30 GHz

Wei Wu, Sheng Wang, Fan Yang, 2022, ArXiv.

Temperature dependent distinct coupling and dispersions of heavy- and light-hole excitonic polaritons in ZnO

C. Che, J. Ning, C. Zheng, 2012 .

The conduction mechanism of large on/off ferroelectric diode currents in epitaxial (111) BiFeO3 thin film

A. Jiang, Boyuan Zhao, Fan Zhang, 2013 .

Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

H. Morkoç, C. Zhu, V. Avrutin, 2013 .

Characterization of phase, structure, and photoelectric properties of CISSe film and CISSe/CdS heterojunctions

J. Wen, Fan Zhang, Yue Zhao, 2022, Applied Physics A.

InGaN light-emitting diodes: Efficiency-limiting processes at high injection

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2013 .

Determination of carrier diffusion length in GaN

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2015 .

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2015, Photonics West - Optoelectronic Materials and Devices.

Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration

C. Che, Dongshan Zhao, Huali Yang, 2012 .

Optical properties of light-hole excitons in GaN epilayers

C. Che, H. Yang, Dongshan Zhao, 2010 .

Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

J. Shao, Shumin Wang, Yuxin Song, 2016, 1606.04657.

Zero-phonon line and fine structure of the yellow luminescence band in GaN

H. Morkoç, M. Reshchikov, A. Usikov, 2016 .

Parametric and cascaded parametric interactions in a quasiperiodic optical superlattice

Shi-ning Zhu, P. Xu, N. Ming, 2002 .

Guided modes in graphene waveguides

Fan Zhang, Fan-Ming Zhang, Ying He, 2009 .

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2015, Photonics West - Optoelectronic Materials and Devices.

Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films

Xiren Chen, J. Shao, Lijuan Wang, 2018 .

Strong carrier localization in stacking faults in semipolar (11-22) GaN

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2015, Photonics West - Optoelectronic Materials and Devices.

Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2013 .

Correlated Band-Edge Emissions of ZnO Nanorods and GaN Underlying Substrate

S. Chua, Rongxin Wang, J. Ning, 2009 .

Structural and optical properties of high Bi content GaSbBi films grown by molecular beam epitaxy

Lijuan Wang, L. Yue, Fan Zhang, 2016, 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects

Hadis Morkoç, Xiang Li, Ümit Özgür, 2012 .

Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2016, SPIE OPTO.

Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2013 .

Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyed ohmic contacts

H. Yang, Rongxin Wang, Jianping Liu, 2023, Journal of Applied Physics.

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

H. Morkoç, V. Avrutin, Ü. Özgür, 2015 .