W. Jia

发表

Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale

Christopher C. S. Chan, B. P. Reid, R. Taylor, 2013 .

Strain and Thermal Effects on Magnetic Hysteresis of a Modified JA-SW Model

W. Jia, Chudong Xu, Zi-zheng Guo, 2018 .

Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes

G. Wang, Hao Jiang, B. Fan, 2012 .

Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers

G. Wang, Hao Jiang, B. Fan, 2012 .

Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure

Gang Wang, G. Wang, W. Jia, 2012 .

Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale

Christopher C. S. Chan, M. Holmes, J. Alexander-Webber, 2013 .

Quantum dot-like excitonic behavior in individual single walled-carbon nanotubes

Christopher C. S. Chan, M. Holmes, S. Stranks, 2016, Scientific Reports.

Contrary luminescence behaviors of InGaN/GaN light emitting diodes caused by carrier tunneling leakage

Gang Wang, Hao Jiang, Bingfeng Fan, 2011 .

Current-induced magnetization switching in a chemically disordered A1 CoPt single layer

Shunpu Li, Peigang Han, Z. Ye, 2021, Applied Physics Express.

Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers

Gang Wang, Hao Jiang, Zhisheng Wu, 2011 .

Spin–orbit torques in heavy metal/ferrimagnetic insulator bilayers near compensation

Shunpu Li, Peigang Han, Zhixiang Ye, 2021, Applied Physics Letters.

High power GaN-based LEDs with nano-structured Ga-doped ZnO (GZO) transparent conductive layer (TCL)

Hao Jiang, Yang Liu, Zhisheng Wu, 2010, SPIE/OSA/IEEE Asia Communications and Photonics.