Jerry G. Fossum

发表

On the Feasibility of Nanoscale Triple-Gate

Ji-Woon Yang, Jerry G. Fossum, 2005 .

Process/physics-based threshold voltage model for nano-scaled double-gate devices

Ching-Te Chuang, Keunwoo Kim, Jerry G. Fossum, 2004 .

Physical subthreshold MOSFET modeling applied to viable design of deep-submicrometer fully depleted SOI low-voltage CMOS technology

Jerry G. Fossum, Ping Chin Yeh, J. Fossum, 1995 .

Computer-aided performance assessment of fully depleted SOI CMOS VLSI circuits

Jerry G. Fossum, P.-C. Yeh, J.-Y. Choi, 1993 .

Double-gate CMOS: symmetrical- versus asymmetrical-gate devices

Keunwoo Kim, Jerry G. Fossum, J. Fossum, 2001 .

A charge-based large-signal bipolar transistor model for device and circuit simulation

Jerry G. Fossum, Hanggeun Jeong, 1989 .

Multi-Gate Device Architectures for GaN based Power Switching Devices

Sanjay K. Banerjee, Jerry G. Fossum, Leo Mathew, 2013 .

Multiple independent gate field effect transistors : Device, process, applications

Aaron Thean, Jerry G. Fossum, Raghaw Rai, 2005 .

Physical Modeling Needed for Reliable SOI Circuit Design (Special Issue on SOI Devices and Their Process Technologies)

Jerry G. Fossum, Srinath Krishnan, 1997 .

SOI versus bulk-silicon nanoscale FinFETs

Zhenming Zhou, Bich-Yen Nguyen, Jerry G. Fossum, 2010 .

A SIMULATION-BASED PREVIEW OF EXTREMELY SCALED DOUBLE-GATE CMOS DEVICES AND CIRCUITS

Jerry G. Fossum, 2002 .

Achieving the ballistic-limit current in Si MOSFETs

Keunwoo Kim, Jerry G. Fossum, 2003 .

Compact non-local modeling of impact ionization in SOI MOSFETs for optimal CMOS device/circuit design

Jerry G. Fossum, S Krishnan, 1996 .

Speed superiority of scaled double-gate CMOS

Meng-Hsueh Chiang, Jerry G. Fossum, Lixin Ge, 2002 .

Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs: Introduction

Jerry G. Fossum, Vishal P. Trivedi, 2013 .

Simulation and assessment of non-quasi-static current crowding in scaled bipolar circuits

Jerry G. Fossum, Joo-hyun Jin, 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

Optimal double-gate MOSFETs: symmetrical or asymmetrical gates?

Keunwoo Kim, Jerry G. Fossum, J. Fossum, 1999, 1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345).

Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs

Jerry G. Fossum, Vishal P. Trivedi, V. Trivedi, 2013 .

MMSPICE: A semi-numerical mixed-mode device/circuit simulator for advanced bipolar technology CAD

Jerry G. Fossum, H. Jeong, D. K. FitzPatrick, 1990 .

Simulation-based assessment of 50 nm double-gate SOI CMOS performance

Jerry G. Fossum, Y. Chong, J. Fossum, 1998, 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).

A SIMULATION-BASED PREVIEW OF EXTREMELY SCALED DOUBLE-GATE CMOS DEVICES AND CIRCUITS

Jerry G. Fossum, J. Fossum, 2002 .

A process/physics-based compact model for nonclassical CMOS device and circuit design

G. O. Workman, V. P. Trivedi, Meng-Hsueh Chiang, 2004 .

On the Suitability of a High- $k$ Gate Dielectric in Nanoscale FinFET CMOS Technology

Jerry G. Fossum, S. Agrawal, 2008 .

Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs: Planar fully depleted SOI MOSFETs

Jerry G. Fossum, Vishal P. Trivedi, 2013 .

Analytic accounting for carrier velocity overshoot in advanced BJT's for circuit simulation

Jerry G. Fossum, J. Jin, 1993 .

Physical modeling of temperature dependences of SOI CMOS devices and circuits including self-heating

M. M. Pelella, Jerry G. Fossum, S. Krishnan, 1998 .

Extremely scaled fully depleted SOI CMOS

Jerry G. Fossum, Vishal P. Trivedi, V. Trivedi, 2002, 2002 IEEE International SOI Conference.

Design issues and insights for low-voltage high-density SOI DRAM

Meng-Hsueh Chiang, Jerry G. Fossum, T. W. Houston, 1998 .

A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon

Jerry G. Fossum, J. Fossum, D. S. Lee, 1982 .

Floating-body kinks and dynamic effects in fully depleted SOI MOSFETs

O. Faynot, Sorin Cristoloveanu, Jerry G. Fossum, 1995, 1995 IEEE International SOI Conference Proceedings.

Simplified energy-balance model for pragmatic multi-dimensional device simulation

Jerry G. Fossum, Duckhyun Chang, 1997 .

Low-voltage transient bipolar effect induced by dynamic floating-body charging in PD/SOI MOSFETs

M. M. Pelella, K. A. Jenkins, Jerry G. Fossum, 1995, 1995 IEEE International SOI Conference Proceedings.

Nanoscale CMOS: potential nonclassical technologies versus a hypothetical bulk-silicon technology

Jerry G. Fossum, Seung-Hwan Kim, 2005 .

Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's

Jerry G. Fossum, J. Fossum, J. Choi, 1991 .

A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits

Jerry G. Fossum, J. Fossum, Dongwoo Suh, 1995 .

Extremely scaled double-gate CMOS performance projections, including GIDL-controlled off-state current

Jerry G. Fossum, K. Kim, Y. Chong, 1999 .

A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits

Ji-Woon Yang, Jerry G. Fossum, Cheng-Liang Huang, 2004 .

Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations

Sorin Cristoloveanu, Olivier Faynot, Jerry G. Fossum, 1998 .

A simple two-dimensional model for subthreshold channel-length modulation in short-channel MOSFETs

Jerry G. Fossum, J. Fossum, K. Green, 1993 .

A study of floating-body effects on inverter chain delay

Jerry G. Fossum, S. Krishnan, R. Rajgopal, 1995, 1995 IEEE International SOI Conference Proceedings.

Silicon-On-Insulator Technology and Devices XII

Sorin Cristoloveanu, Jerry G. Fossum, Francisco Gamiz, 2003 .

Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels

Jerry G. Fossum, J. Fossum, Weimin Zhang, 2003 .

Dynamic floating-body instabilities in partially depleted SOI CMOS circuits

Jerry G. Fossum, J. Fossum, Dongwoo Suh, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

Current-drive enhancement limited by carrier velocity saturation in deep-submicrometer fully depleted SOI MOSFETs

Jerry G. Fossum, S. Krishnan, J. Fossum, 1993 .

Short-channel effects in SOI MOSFETs

S. Veeraraghavan, Jerry G. Fossum, J. Fossum, 1989 .

SOI design for competitive CMOS VLSI

Jerry G. Fossum, R. Sundaresan, J. Fossum, 1990 .

Control of off-state current in scaled PD/SOI CMOS digital circuits

M. M. Pelella, Jerry G. Fossum, S. Krishnan, 1998, 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).

The effect of body resistance on the breakdown characteristics of SOI MOSFET's

Jerry G. Fossum, Dongwook Suh, 1994 .