T. Kociniewski

发表

Enhanced photoluminescence of heavily n-doped germanium

O. Kermarrec, D. Bensahel, J. Damlencourt, 2009 .

Hydrogen incorporation, bonding and stability in nanocrystalline diamond films

H. Girard, J. Vigneron, D. Ballutaud, 2008 .

Sp3/sp2 character of the carbon and hydrogen configuration in micro- and nanocrystalline diamond

H. Girard, D. Ballutaud, F. Jomard, 2008 .

MOCVD doping technology for phosphorus incorporation in diamond: Influence of the growth temperature on the electrical properties

J. Barjon, J. Chevallier, F. Jomard, 2007 .

n‐type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation

A. Lusson, D. Ballutaud, J. Barjon, 2006 .

Some Recent Advances on the n-Type Doping of Diamond

J. Butler, R. Kalish, A. Deneuville, 2005 .

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

L. Largeau, N. Cherkashin, D. Bouchier, 2012 .

Formation of deuterium-related shallow donors in boron-doped diamond.

J. Butler, R. Kalish, A. Deneuville, 2004 .

Silicon incorporation in CVD diamond layers

D. Ballutaud, J. Barjon, J. Chevallier, 2005 .

Conversion of p-type to n-type diamond by exposure to a deuterium plasma

J. Butler, R. Kalish, A. Deneuville, 2004 .

The p-to-n-type conversion of boron-doped diamond layers by deuteration: New findings

R. Kalish, A. Deneuville, D. Ballutaud, 2007 .

Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser

I. Sagnes, O. Kermarrec, D. Bensahel, 2009, 2009 6th IEEE International Conference on Group IV Photonics.

Quantitative analysis of electronic absorption of phosphorus donors in diamond

A. Lusson, J. Barjon, I. Stenger, 2017 .

Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

D. Mangelinck, C. Dubois, É. Bustarret, 2011, 1103.4409.

Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy

J. Barjon, J. Chevallier, F. Jomard, 2007 .

Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond

J. Barjon, I. Stenger, F. Jomard, 2021 .

The n-type doping of diamond: Present status and pending questions

J. Barjon, J. Chevallier, F. Jomard, 2007 .

Cathodoluminescence as a tool to determine the phosphorus concentration in diamond

J. Barjon, J. Chevallier, M. Pinault, 2007 .

Impurity-to-band activation energy in phosphorus doped diamond

A. Lusson, J. Barjon, I. Stenger, 2013 .

The Superconducting Transition in Boron Doped Silicon Films

B. Gautier, L. Ortega, C. Dubois, 2010 .

Optical and electrical properties of laser doped Si:B in the alloy range

F. Fossard, T. Kociniewski, J. Boulmer, 2012 .

Different approaches for the n-type doping of diamond

R. Kalish, J. Barjon, J. Chevallier, 2007, 2007 International Workshop on Physics of Semiconductor Devices.

Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy

Z. Remeš, F. Omnès, M. Nesladek, 2009 .

Shallow donor induced n‐type conductivity in deuterated boron‐doped diamond

J. Butler, R. Kalish, J. Chevallier, 2004 .

Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

B. Gautier, L. Ortega, C. Dubois, 2009, 0910.5378.