J. Boulmer

发表

Enhanced photoluminescence of heavily n-doped germanium

O. Kermarrec, D. Bensahel, J. Damlencourt, 2009 .

Single-Shot Excimer Laser Annealing and In Process Ellipsometry Analysis for Ultra Shallow Junctions

C. Laviron, T. Noguchi, D. Zahorski, 2002 .

Ultraviolet optogalvanic laser spectroscopy of iron for reference wavelengths.

P. Pillet, J. Boulmer, F. Babin, 1987, Optics letters.

Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments

C. Laviron, D. Zahorski, J. Santailler, 2003 .

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

L. Largeau, N. Cherkashin, D. Bouchier, 2012 .

Bulk and surface structural properties of Si1−x−yGexCy layers processed on Si(001) by pulsed laser induced epitaxy

C. Clerc, D. Bouchier, F. Houzé, 1996 .

Multiphoton double ionisation of Ba from 280 to 700 nm

Y. Zhu, W. Sandner, P. Pillet, 1989 .

Pseudomorphic SiGe∕Si(001) layers synthesized by gas immersion laser doping

D. Bouchier, V. Mathet, F. Fossard, 2008 .

Local strains in Si1-x-yGexCy alloys as deduced from vibrational frequencies

J. Regolini, S. Prawer, D. Bouchier, 1997 .

Laser modifications of Si(100) : Cl surfaces induced by surface melting : etching and cleaning

B. Bourguignon, B. Dragnea, J. Boulmer, 1995 .

Planarization of rough silicon surfaces by laser annealing

A. Bosseboeuf, J. Boulmer, D. Débarre, 1997 .

Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser

I. Sagnes, O. Kermarrec, D. Bensahel, 2009, 2009 6th IEEE International Conference on Group IV Photonics.

Associative ionisation rate constants as a function of quantum numbers n and l in Na*(nl)+Na(3s) collisions for 17<=n=2

J. Weiner, J. Boulmer, 1986 .

Superconductivity in doped cubic silicon

X. Blase, L. Ortega, É. Bustarret, 2006, Nature.

Raman spectroscopy of Si1 − x − yGexCy layers obtained by pulsed laser induced epitaxy

K. Nugent, S. Prawer, D. Bouchier, 1996 .

Realization of Si1−x−yGexCy/Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)

K. Nugent, S. Prawer, D. Bouchier, 1995 .

Low-Temperature Rare-Gas Stationary Afterglows

J. Boulmer, J. Delpech, J. Stevefelt, 1976 .

Collisional-radiative recombination in cold plasmas

J. Boulmer, J. Delpech, J. Stevefelt, 1975 .

Collisional-radiative transfer between Rydberg states of helium and electronic recombination of He +

J. Boulmer, J. Delpech, J. Stevefelt, 1977 .

Electronic Recombination of He + 2

J. Gauthier, J. Boulmer, J. Delpech, 1973 .

Collisional depopulation cross sections of high-Rydberg Na s states by Ar

J. Gauthier, K. Safinya, J. Boulmer, 1981 .

Excitation Exchange and Collisional Relaxation of Rydberg Levels of Helium

J. Boulmer, J. Delpech, F. Devos, 1980 .

Transitions between Rydberg levels of helium induced by electron and neutral collisions

J. Boulmer, J. Delpech, F. Devos, 1979 .

Temperature dependence of depopulation rates in transitions between Rydberg levels of helium induced by electron collisions

J. Gauthier, J. Boulmer, F. Devos, 1977 .

Direct measurement of diffusion cooling in an afterglow plasma

J. Gauthier, J. Boulmer, C. Sol, 1972 .

Determination of the absolute rate constant for associative ionization in crossed-beam collisions between Na 3/sup 2/P/sub 3/2/ atoms

J. Weiner, J. Boulmer, R. Bonanno, 1983 .

Crossed-beam measurements of absolute rate coefficients in associative ionisation collisions between Na*(np) and Na(3s) for 5⩽n⩽15

J. Weiner, J. Boulmer, R. Bonanno, 1983 .

Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

D. Mangelinck, C. Dubois, É. Bustarret, 2011, 1103.4409.

Collisional angular momentum mixing of very high (20≤n≤46) Rydberg d states of Na by Ar, Kr and Xe

J. Gauthier, J. Boulmer, M. Chapelet, 1982 .

Spectroscopic studies of 9dn'd doubly excited autoionising states of neutral barium

P. Pillet, J. Boulmer, P. Camus, 1985 .

Limitation of sequential laser excitation for double-Rydberg autoionizing states of barium and quantum-defect approach

J. Lecomte, P. Pillet, J. Boulmer, 1988 .

Highly Excited Double-Rydberg States in Barium

J. Lecomte, P. Pillet, J. Boulmer, 1990 .

Double Rydberg Spectroscopy of Barium Atom

P. Camus, P. Pillet, J. Boulmer, 1987, Topical Meeting on Multiple Excitations of Atoms.

Laser-microwave ionisation mass spectroscopy of ion Rydberg states: Ba+ spectrum

P. Pillet, J. Boulmer, P. Camus, 1987 .

Laser Spectroscopy of Double-Rydberg States of Barium

P. Pillet, J. Boulmer, P. Camus, 1987 .

Laser doping for microelectronics and microtechnology

Tarik Bourouina, Kuniyuki Kakushima, Elisabeth Dufour-Gergam, 2004, SPIE High-Power Laser Ablation.

Integration of a long pulse laser thermal process for ultra shallow junction formation of CMOS devices

C. Laviron, K. Huet, T. Sarnet, 2004, 12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004..

Influence of adsorbates on UV-pulsed laser melting of Si in ultra-high vacuum

B. Bourguignon, B. Dragnea, J. Boulmer, 2001 .

Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon

D. Bouchier, C. Dubois, F. Fossard, 2008 .

Optical characterization of laser processed ultra-shallow junctions

C. Laviron, D. Zahorski, M. Semeria, 2003 .

Optical and electrical properties of laser doped Si:B in the alloy range

F. Fossard, T. Kociniewski, J. Boulmer, 2012 .

Theoretical prediction and experimental observation of (n+1)p→nl (1≥2) transitions in excited sodium-rare-gas collisions

J. Boulmer, F. Masnou-Seeuws, P. Valiron, 1982 .

Growth of a SiC layer on Si(100) from adsorbed propene by laser melting

B. Bourguignon, B. Dragnea, J. Boulmer, 2001 .

Laser thermal processing using an optical coating for ultra shallow junction formation

C. Laviron, J. Santailler, T. Sarnet, 2004 .

Gas immersion laser doping (GILD) for ultra-shallow junction formation

C. Laviron, G. Kerrien, Jacques Boulmer, 2004 .

Fabrication of heavily boron doped mechanical resonators

H. Fujita, H. Kawakatsu, T. Bourouina, 2003, TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664).

PULSED LASER ETCHING OF SILICON : DOPANT PROFILE MODIFICATION AND DOPANT DESORPTION INDUCED BY SURFACE MELTING

Jacques Boulmer, J.-B. Ozenne, Bernard Bourguignon, 1994 .

Laser-induced structural or compositional modifications of Si or IV-IV surface: planarization, pulsed-laser-induced epitaxy, carbon incorporation, and chemical etching

Alain Bosseboeuf, B. Bourguignon, Jacques Boulmer, 1998, Other Conferences.

Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

B. Gautier, L. Ortega, C. Dubois, 2009, 0910.5378.

Production of Na 2 + by crossed-beam collisions in the presence of intense, nonresonant radiation

J. Weiner, J. Boulmer, 1983 .