D. Débarre

发表

Enhanced photoluminescence of heavily n-doped germanium

O. Kermarrec, D. Bensahel, J. Damlencourt, 2009 .

Single-Shot Excimer Laser Annealing and In Process Ellipsometry Analysis for Ultra Shallow Junctions

C. Laviron, T. Noguchi, D. Zahorski, 2002 .

Cars study of vibrationally excited H2 produced in formaldehyde dissociation

C. Moore, D. Débarre, M. Péalat, 1983 .

On the formation of self-assembled Ge/Si(0 0 1) quantum dots

D. Bouchier, V. L. Thanh, J. Lourtioz, 1999 .

Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition

D. Bouchier, V. L. Thanh, J. Lourtioz, 1998 .

Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments

C. Laviron, D. Zahorski, J. Santailler, 2003 .

Aspects of Ge/Si self-assembled quantum dots

V. Yam, D. Bouchier, V. L. Thanh, 2002 .

Tunable Ti:Al2O3 oscillator optimized for high-repetition-rate and short pulses

W. Denk, D. Débarre, J. Sawinski, 2007, 0705.2281.

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

L. Largeau, N. Cherkashin, D. Bouchier, 2012 .

Effect of the bimodal size distribution on the optical properties of self-assembled Ge/Si(001) quantum dots

V. Yam, D. Bouchier, V. L. Thanh, 2000 .

Pseudomorphic SiGe∕Si(001) layers synthesized by gas immersion laser doping

D. Bouchier, V. Mathet, F. Fossard, 2008 .

Laser modifications of Si(100) : Cl surfaces induced by surface melting : etching and cleaning

B. Bourguignon, B. Dragnea, J. Boulmer, 1995 .

Mechanism of vertical correlation in Ge/Si(001) islands multilayer structures by chemical vapor deposition

V. Yam, D. Bouchier, D. Débarre, 2007 .

Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(0 0 1) surfaces

V. Yam, D. Bouchier, H. Strunk, 2004 .

Planarization of rough silicon surfaces by laser annealing

A. Bosseboeuf, J. Boulmer, D. Débarre, 1997 .

Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser

I. Sagnes, O. Kermarrec, D. Bensahel, 2009, 2009 6th IEEE International Conference on Group IV Photonics.

Intraband absorption in Ge/Si self-assembled quantum dots

D. Bouchier, V. L. Thanh, S. Sauvage, 1999 .

NUCLEATION AND GROWTH OF SELF-ASSEMBLED GE/SI(001) QUANTUM DOTS

D. Bouchier, V. L. Thanh, J. Lourtioz, 1998 .

UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si.

E. Cassan, C. Clerc, V. Yam, 2005 .

Superconductivity in doped cubic silicon

X. Blase, L. Ortega, É. Bustarret, 2006, Nature.

Characterization of W Films on Si and SiO2/Si Substrates by X-Ray Diffraction, AFM and Blister Test Adhesion Measurements

Tarik Bourouina, Alain Bosseboeuf, Daniel Bouchier, 1997 .

Realization of Si1−x−yGexCy/Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)

K. Nugent, S. Prawer, D. Bouchier, 1995 .

Photofragmentation dynamics of formaldehyde: H2(v, J) distributions

C. Moore, D. Débarre, D. Bamford, 1985 .

Study of surface roughening of tensily strained Si1−x−yGexCy films grown by ultra high vacuum-chemical vapor deposition

C. Clerc, D. Bouchier, V. L. Thanh, 2003 .

Surface roughening of tensilely strained Si1−x−yGexCy films grown by ultrahigh vacuum chemical vapor deposition

C. Clerc, D. Bouchier, D. Débarre, 2002 .

Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

D. Mangelinck, C. Dubois, É. Bustarret, 2011, 1103.4409.

Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition

M. Halbwax, Mourad Benamara, Lam H. Nguyen, 2005 .

Kinetics of the heteroepitaxial growth of Ge on Si(001)

V. Yam, D. Bouchier, V. L. Thanh, 2002 .

High-luminosity visible and near-IR Fourier-transform photoacoustic spectrometer.

A. Boccara, D. Fournier, D. Débarre, 1981, Applied Optics.

Photoacoustic Fourier Transform Spectroscopy for the Visible and the Near Infrared

A. Boccara, D. Fournier, D. Débarre, 1984 .

Laser doping for microelectronics and microtechnology

Tarik Bourouina, Kuniyuki Kakushima, Elisabeth Dufour-Gergam, 2004, SPIE High-Power Laser Ablation.

The Superconducting Transition in Boron Doped Silicon Films

B. Gautier, L. Ortega, C. Dubois, 2010 .

Influence of adsorbates on UV-pulsed laser melting of Si in ultra-high vacuum

B. Bourguignon, B. Dragnea, J. Boulmer, 2001 .

Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon

D. Bouchier, C. Dubois, F. Fossard, 2008 .

Optical characterization of laser processed ultra-shallow junctions

C. Laviron, D. Zahorski, M. Semeria, 2003 .

Gas Immersion Laser Doping for superconducting nanodevices

F. Chiodi, F. Fossard, D. Débarre, 2014 .

Resonance-enhanced coherent anti-Stokes Raman scattering in C2

D. Débarre, K. Müller-Dethlefs, J. Taran, 1983 .

STEM analysis of deformation and B distribution In nanosecond laser ultra-doped Si1−x B x

G. Patriarche, F. Chiodi, D. Débarre, 2022, Semiconductor Science and Technology.

Optical and electrical properties of laser doped Si:B in the alloy range

F. Fossard, T. Kociniewski, J. Boulmer, 2012 .

Growth of a SiC layer on Si(100) from adsorbed propene by laser melting

B. Bourguignon, B. Dragnea, J. Boulmer, 2001 .

Ablation with a single micropatterned KrF laser pulse: quantitative evidence of transient liquid microflow driven by the plume pressure gradient at the surface of polyesters

F. Weisbuch, D. Débarre, V. Tokarev, 2003 .

Room temperature magneto-optic effect in silicon light-emitting diodes

R. Friend, F. Chiodi, A. Chepelianskii, 2017, Nature Communications.

Formation and properties of selectively grown Ge/Si quantum dots

V. Yam, D. Bouchier, V. L. Thanh, 2004 .

Kinetics of Si capping process of Ge/Si(0 0 1) quantum dots

V. Yam, D. Bouchier, V. L. Thanh, 2004 .

Laser thermal processing using an optical coating for ultra shallow junction formation

C. Laviron, J. Santailler, T. Sarnet, 2004 .

Neutron transmutation as a method to calibrate the infrared absorption of indium in silicon

D. Débarre, B. Pajot, D. Roche, 1981 .

Gas immersion laser doping (GILD) for ultra-shallow junction formation

C. Laviron, G. Kerrien, Jacques Boulmer, 2004 .

Fabrication of heavily boron doped mechanical resonators

H. Fujita, H. Kawakatsu, T. Bourouina, 2003, TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664).

Selective Si growth on partially desorbed SiO2/Si(001) surfaces

V. Yam, D. Bouchier, F. Fossard, 2008 .

Quantitative Determination of B and P in Silicon by IR Spectroscopy

D. Débarre, B. Pajot, 1981 .

Formation and optical properties of Ge quantum dots selectively grown on patterned Si(001) substrates

V. Yam, D. Bouchier, V. L. Thanh, 2004 .

PULSED LASER ETCHING OF SILICON : DOPANT PROFILE MODIFICATION AND DOPANT DESORPTION INDUCED BY SURFACE MELTING

Jacques Boulmer, J.-B. Ozenne, Bernard Bourguignon, 1994 .

Vertical ordering in multilayers of self-assembled Ge/Si(001) quantum dots

V. Yam, D. Bouchier, V. L. Thanh, 2002 .

Laser-induced structural or compositional modifications of Si or IV-IV surface: planarization, pulsed-laser-induced epitaxy, carbon incorporation, and chemical etching

Alain Bosseboeuf, B. Bourguignon, Jacques Boulmer, 1998, Other Conferences.

Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

B. Gautier, L. Ortega, C. Dubois, 2009, 0910.5378.

Viscosity of transient melt layer on polymer surface under conditions of KrF laser ablation

F. Weisbuch, S. Lazare, D. Débarre, 2002 .

Model-based Aberration Correction in a Closed-loop Wavefront-sensor-less Adaptive Optics System References and Links

A. Greenaway, M. Verhaegen, A. Rukosuev, 2022 .

Selective growth of Ge quantum dots on chemically prepared SiO2/Si(001) surfaces

V. Yam, D. Bouchier, V. L. Thanh, 2003 .