D. Olego

发表

Plasma dispersion in a layered electron gas: A determination in GaAs-(AlGa) As heterostructures

A. Gossard, W. Wiegmann, A. Pinczuk, 1982 .

Combined PET/MRI: from Status Quo to Status Go. Summary Report of the Fifth International Workshop on PET/MR Imaging; February 15–19, 2016; Tübingen, Germany

V. Sossi, B. Gückel, V. Goh, 2016, Molecular Imaging and Biology.

Local vibrational mode spectroscopy of nitrogen‐hydrogen complex in ZnSe

E. Haller, K. Duxstad, J. Ager, 1993 .

Control of threading dislocations in lattice-mismatched heteroepitaxy

A. P. Taylor, L. Schowalter, D. Olego, 1992 .

Optical properties and Iineshape analysis of II-VI compounds obtained by spectroscopic ellipsometry

J. M. Gaines, D. Olego, J. Petruzzello, 1994, Conference on Lasers and Electro-Optics Europe.

Optoelectronic properties of Cd1−xZnxTe films grown by molecular beam epitaxy on GaAs substrates

P. M. Raccah, S. Sivananthan, D. Olego, 1985 .

Effect of N doping on the structural properties of ZnSe epitaxial layers grown by molecular beam epitaxy

J. M. Gaines, D. Olego, P. Sluis, 1993 .

Raman scattering by coupled LO-phonon—plasmon modes and forbidden TO-phonon Raman scattering in heavily dopedp-type GaAs

M. Cardona, D. Olego, 1981 .

Photoluminescence in heavily doped GaAs. I. Temperature and hole-concentration dependence

M. Cardona, D. Olego, 1980 .

The microscopic structure of bulk amorphous red phosphorus: A Raman scattering investigation

P. M. Raccah, D. Olego, J. A. Baumann, 1984 .

Semiconductor properties of polyphosphides

P. M. Raccah, L. Polgar, W. Spicer, 1984 .

Interfacial properties of InP and phosphorus deposited at low temperature

P. M. Raccah, W. Spicer, D. Olego, 1985 .

Novel Polyphosphide Semiconductors with Good Interfacial Properties to INP

P. M. Raccah, L. Polgar, W. Spicer, 1985 .

Passivation of the GaAs surface by an amorphous phosphorus overlayer

D. Olego, J. A. Baumann, R. Schachter, 1984 .

Structural properties of Hg1−xZnxTe‐CdTe strained layer superlattices and the reduction of threading dislocations from a CdTe buffer layer

D. Olego, J. Petruzzello, J. Faurie, 1989 .

Optical and vibrational properties of doped zinc selenide epitaxial layers

K. Shahzad, D. Olego, J. Petruzzello, 1992 .

Transmission electron microscopy of (001) ZnTe on (001) GaAs grown by molecular‐beam epitaxy

D. Olego, J. Petruzzello, J. Faurie, 1988 .

Effects of ZnSe epitaxial growth on the surface properties of GaAs

D. Olego, 1987 .

Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers

J. M. Gaines, K. Shahzad, D. Olego, 1990 .

Absolute cross section of first-order Raman scattering in GaAs

M. Cardona, M. Grimsditch, D. Olego, 1979 .

Temperature dependence of the optical phonons and transverse effective charge in 3 C -SiC

M. Cardona, D. Olego, 1982 .

Theoretical and Experimental Determinations of Raman Scattering Cross Sections in Simple Solids

M. Cardona, M. Grimsditch, D. Olego, 1979 .

Pressure dependence of the Raman modes and pressure-induced phase changes in CuGa S 2 and AgGa S 2

A. Jayaraman, M. Cardona, D. Olego, 1980 .

Elastic strains in CdTe‐GaAs heterostructures grown by metalorganic chemical vapor deposition

S. Ghandhi, I. Bhat, D. Olego, 1987 .

Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions

E. Haller, Z. Liliental-Weber, E. Weber, 1994 .

Optoelectronic properties of ZnSeGaAs interfaces: Role of interface chemistry and structural defects

D. Olego, D. Cammack, David A. Cammack, 1990 .

Optical characterization of ultra-high-purity Zinc Selenide epilayers

K. Shahzad, D. Olego, D. Cammack, 1990 .

Effects of strain on the optical and vibrational properties of ZnSe-ZnSxSe1-x strained-layer superlattices

C. Walle, K. Shahzad, D. Olego, 1990 .

Spectroscopy of bound and free holes in p-type ZnSe layers

D. Olego, J. Petruzzello, T. Marshall, 1992 .

Raman scattering by LO-phonon-plasmon coupled modes in p-type GaAs: Wave vector non conservation

M. Cardona, D. Olego, 1979 .

Summary Abstract: Passivation of the GaAs surface by an amorphous phosphorus overlayer

D. Olego, J. A. Baumann, R. Schachter, 1985 .

Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP

Aron Pinczuk, A. Pinczuk, T. Chang, 1982 .

Luminescence above the gap in heavily Zn-doped GaAs

M. Cardona, D. Olego, 1979 .

Raman scattering by two LO-phonons near Γ in GaAs

M. Cardona, D. Olego, 1981 .

Optical vibrational modes of ZnSe-ZnS x Se 1-x strained-layer superlattices

K. Shahzad, H. Cornelissen, D. Olego, 1988 .

Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition

S. Ghandhi, I. Bhat, D. Olego, 1987 .

Photoluminescence and Raman scattering investigations of implanted and thermally annealed InP

D. Olego, H. Serreze, 1985 .

Photoluminescence in heavily doped GaAs. II. Hydrostatic pressure dependence

M. Cardona, H. Müller, D. Olego, 1980 .

Self-energy effects of the optical phonons of heavily doped p − G a A s and p − G e

M. Cardona, D. Olego, 1981 .

Pressure dependence of Raman phonons of Ge and 3C-SiC

Manuel Cardona, M. Cardona, D. Olego, 1982 .

The microscope structures of amorphous phosphorus

D. Olego, J. A. Baumann, R. Schachter, 1985 .

Vibrational and electronic properties ofMP15polyphosphides: CrystallineRbP15,KP15, andNaP15

D. Olego, 1985 .

Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs Superlattice

Gerhard Abstreiter, H. Kuenzel, Klaus H. Ploog, 1981 .

Resonant inelastic light scattering by free electrons in InP

A. Pinczuk, A. Ballman, D. Olego, 1983 .

Structural properties of nitrogen-doped ZnSe epitaxial layers grown by MBE

D. Olego, P. Sluis, J. Petruzzello, 1993 .

ZnSe(100): The surface and the formation of Schottky barriers with Al and Au

A. Kahn, W. Chen, P. Soukiassian, 1994 .

Strains in Si‐on‐SiO2 structures formed by oxygen implantation: Raman scattering characterization

H. Baumgart, G. Celler, D. Olego, 1988 .

Effects of II–VI epitaxy on III–V surfaces: A study of ZnSe on GaAs

D. Olego, 1988 .

Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates

D. J. Olego, Y. Okuno, T. Kawano, 1992 .

InP metal-insulator-semiconductor field-effect transistors utilizing an amorphous phosphorus gate insulator

D. Olego, H. Serreze, R. Schachter, 1987, IEEE Transactions on Electron Devices.

Optoelectronic and structural properties of sputter etched surfaces of InP

D. Olego, L. A. Bunz, R. Schachter, 1986 .

Thickness dependence of strains in strained‐layer superlattices

K. Shahzad, D. Olego, D. Cammack, 1988 .

Free hole gas and its coupling to phonons in ZnSe:Li layers

John Petruzzello, D. J. Olego, D. Olego, 1991 .

Electronic Raman scattering from acceptors and correlation with transport properties in Li‐doped ZnSe layers

K. Shahzad, D. Olego, J. Petruzzello, 1991 .