M. Krishnamurthy

发表

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

S. Denbaars, P. Petroff, C. M. Reaves, 1993 .

Nucleation and Pattern Formation of Coherent Islands During Epitaxial Growth of Ge on Si(110) Surfaces

M. Krishnamurthy, C. G. Slough, J. Weil, 1996 .

Microstructural evolution during the epitaxial growth of Ag/InP (100)

M. Krishnamurthy, J. Drucker, 1994 .

Microstructural evolution during the heteroepitaxy of Ge on vicinal Si(100)

J. Venables, M. Krishnamurthy, J. Drucker, 1991 .

Preferential nucleation of Ge islands at self-organized pits formed during the growth of thin Si buffer layers on Si(110)

M. Krishnamurthy, X. Deng, J. Weil, 1998 .

InP islands on GaAs substrates: MOCVD growth of quantum-sized structures

W. H. Weinberg, S. Denbaars, P. Petroff, 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

Study of temperature dependent hydrogenation on near‐surface strained quantum wells

J. Merz, Y. Chang, P. Petroff, 1993 .

Low-temperature epitaxial growth of Ge-rich Ge–Si–C alloys: Microstructure, Raman studies, and optical properties

W. Weber, M. Krishnamurthy, Bi-Ke Yang, 1998 .

The Ge–C local mode in epitaxial GeC and Ge-rich GeSiC alloys

W. Weber, M. Krishnamurthy, Bi-Ke Yang, 1998 .

Evidence for Substitutional C, Ordering Effects and Interdiffusion in Epitaxial GE-C and GE-RICH GE-SI-C Alloys

W. Weber, M. Krishnamurthy, Bi-Ke Yang, 1998 .

The Effect of Si Additions on the Epitaxial Growth of Ge l−x C x Alloys on Si(100)

M. Krishnamurthy, J. Weil, Bi-Ke Yang, 1996 .

Role Of Surface Instability And Anisotropy On Strain Relaxation Of Sige On Si(110)

M. Krishnamurthy, X. Deng, 1998 .

Heterogeneous nucleation of coherently strained islands during epitaxial growth of Ge on Si(110)

M. Krishnamurthy, C. G. Slough, J. Weil, 1997 .

Incorporation and stability of carbon during low-temperature epitaxial growth of Ge1−xCx (x<0.1) alloys on Si(100): Microstructural and Raman studies

W. Weber, M. Krishnamurthy, Bi-Ke Yang, 1997 .

Biassed secondary electron imaging in a UHV-STEM

J. M. Cowley, J. Venables, P. Crozier, 1989 .

Microstructural development and optical properties of epitaxial Ge1−xCx alloys on Si(100)

W. Weber, M. Krishnamurthy, Bi-Ke Yang, 1996 .

Studies of Surface Diffusion and Crystal Growth by SEM and STEM

J. Venables, M. Krishnamurthy, J. Drucker, 1990 .

Epitaxial growth and characterization of Ge1−xCx alloys on Si(100)

M. Krishnamurthy, J. Drucker, A. Challa, 1995 .

Step equalization in epitaxial growth: A noise limited process

M. Krishnamurthy, David Williams, 1993 .

Nucleation and Growth Mechanisms in Hetero-Epitaxial Films

J. Venables, M. Krishnamurthy, J. Drucker, 1990 .

SELF-ASSEMBLY OF QUANTUM-DOT MOLECULES : HETEROGENEOUS NUCLEATION OF SIGE ISLANDS ON SI(100)

M. Krishnamurthy, M. Krishnamurthy, X. Deng, 1998 .

Biassed secondary electron imaging of monatomic surface steps on vicinal Si(100) in a UHV STEM

M. Krishnamurthy, G. Hembree, J. Drucker, 1991 .

Periodic faceting on vicinal GaAs(110) surfaces during epitaxial growth

P. Petroff, M. Krishnamurthy, M. Wassermeier, 1993 .

Role of surface instability and anisotropy in strain relaxation of epitaxial SiGe on Si (110)

M. Krishnamurthy, X. Deng, 1999 .

Microstructural evolution during epitaxial growth of Ag on vicinal InP(100) surfaces

M. Krishnamurthy, M. Krishnamurthy, Jeffery Drucker, 1996 .

p on n heterostructures in HgCdTe on GaAs analyzed by transmission electron microscopy

P. Petroff, M. Krishnamurthy, J. Arias, 1993 .

Structure of serpentine superlattice quantum‐wire arrays determined by transmission electron microscopy

Pierre Petroff, M. Krishnamurthy, P. Petroff, 1992 .

TEMPERATURE DEPENDENCE OF SIGE COHERENT ISLAND FORMATION ON SI(100) : ANOMALOUS REENTRANT BEHAVIOR

M. Krishnamurthy, X. Deng, J. Weil, 1998 .

Auger electron spectroscopy and microscopy with probe‐size limited resolution

J. Venables, M. Krishnamurthy, G. Hembree, 1991 .

Molecular Beam Epitaxial Growth of (Al,Ga)As Tilted Superlattices on Vicinal GaAs (110)

J. Merz, H. Weman, M. Krishnamurthy, 1991 .

Self-organized lateral superlattice formation by vertical exchange reactions

P. Petroff, A. Lorke, M. Krishnamurthy, 1994 .

Dynamics of Periodic Step-Bunching During Growth on Vicinal GaAs(110) Surfaces: Computer Simulations and Experiments

P. Petroff, M. Krishnamurthy, David Williams, 1993 .

Growth and characterization of serpentine superlattices in the GaSb‐AlSb system

H. Kroemer, J. English, K. Wong, 1993 .

Molecular‐beam epitaxial growth mechanisms of (Al,Ga)As on vicinal GaAs surfaces: Self‐organization and step bunching

P. Petroff, A. Lorke, M. Krishnamurthy, 1993 .

The Role of Vertical Exchange in the Growth of GaAs/AlAs Lateral and Vertical Superlattices

P. Petroff, A. Lorke, M. Krishnamurthy, 1993 .

Epitaxial Growth of GaAs-AIGaAs Quantum Wire Superlattices on Vicinal Surfaces.

J. Merz, P. Petroff, H. Kroemer, 1991 .

Formation of nanoscale trenches and wires as a pathway to phase-separation in strained epitaxial Ge-Sn alloys

S. Hackney, J. Zhang, D. Swenson, 1999 .

Formation of Self-Assembled Quantum Wires during Epitaxial Growth of Strained GeSn Alloys on Ge(100): Trench Excavation by Migrating Sn Islands

D. Williams, S. Hackney, M. Krishnamurthy, 1998 .

Molecular‐beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs

James L. Merz, Simon Fafard, Pierre Petroff, 1994 .