O. Esame

Diamond semiconductor technology for RF device applications

I. Tekin, W. Kang, Y. Gurbuz, 2005 .

Realization of a Low Noise Amplifier using 0.35 μm SiGe-BiCMOS Technology for IEEE 802.11a Applications

Y. Gurbuz, O. Esame, A. Ergintav, 2006 .

Design of a 4.2-5.4 GHz Differential LC VCO using 0.35 μm SiGe BiCMOS Technology

I. Tekin, Y. Gurbuz, O. Esame, 2006, IEEE Sarnoff Symposium.

GHz Differential LC VCO using 0 . 35 μ m SiGe BiCMOS Technology

I. Tekin, Y. Gurbuz, O. Esame, 2006 .

Design of a 4.2–5.4 GHz differential LC VCO using 0.35 μm SiGe BiCMOS technology for IEEE 802.11a applications

Yasar Gurbuz, Ibrahim Tekin, Ayhan Bozkurt, 2007 .

Realization of a VCO for WLAN applications using 0.35 μm-siGe BICMOS technology

I. Tekin, Y. Gurbuz, O. Esame, 2008 .

Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP

Yasar Gurbuz, Ibrahim Tekin, Ayhan Bozkurt, 2004, Microelectron. J..