K. Courouble

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives

P. Chevalier, Y. Campidelli, D. Gloria, 2014, 2014 IEEE International Electron Devices Meeting.

Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer

M. Gros-Jean, N. Rochat, F. Bertin, 2018 .

A Highly Reliable Back Side Illuminated Pixel against Plasma Induced Damage

P. Magnan, V. Goiffon, K. Courouble, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Hidden surface photovoltages revealed by pump probe KPFM

B. Grévin, R. Demadrille, K. Courouble, 2021, Nanotechnology.

Correlative analysis of embedded silicon interface passivation by Kelvin probe force microscopy and corona oxide characterization of semiconductor.

M. Gros-Jean, K. Courouble, Ł. Borowik, 2021, Review of Scientific Instruments.