L. C. Markert

发表

Growth of single-crystal TiN/VN strained-layer superlattices with extremely high mechanical hardness

S. Barnett, U. Helmersson, J. Greene, 1987 .

Incorporation probabilities and depth distributions of aluminum co-evaporated during Si(100) molecular beam epitaxy

M. Hasan, J. Greene, J. Sundgren, 1990 .

Indium Ion Doping During Si Molecular Beam Epitaxy

A. Rockett, J. Knall, J. Greene, 1987 .

Ar and excess N incorporation in epitaxial TiN films grown by reactive bias sputtering in mixed Ar/N2 and pure N2 discharges

L. Hultman, J. Greene, J. Sundgren, 1989 .

Crystal growth and electronic properties of ultrahigh vacuum ion‐beam sputter deposited Sb‐doped Si(001)2×1

N. Lee, J. Greene, G. Tomasch, 1994 .

Growth of homoepitaxial Ge(001)2×1 by ultrahigh vacuum ion beam sputter deposition

N. Lee, young-Seok Kim, J. Greene, 1993 .

Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2 discharges

L. Hultman, J. Greene, B. Johansson, 1988 .

Concentration transient analysis of antimony surface segregation during Si(001) molecular beam epitaxy

J. Greene, J. Sundgren, L. C. Markert, 1991 .

DOPANT INCORPORATION KINETICS AND ABRUPT PROFILES DURING SILICON MOLECULAR BEAM EPITAXY

J. Knall, M. Hasan, J. Greene, 1989 .

Incorporation of accelerated low-energy (50-500 eV) In + ions in Si(100) films during growth by molecular-beam epitaxy

A. Rockett, J. Knall, S. Barnett, 1989 .

Incorporation of in by recoil implantation during MBE growth of Si(100)

J. Knall, J. Greene, J. Sundgren, 1989 .

Electrical properties of Si films doped with 200‐eV In+ ions during growth by molecular‐beam epitaxy

J. Knall, young-Seok Kim, M. Hasan, 1989 .

Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy

P. Fons, J. Knall, young-Seok Kim, 1988 .

Phase‐selective chemical vapor deposition of boron carbide by nucleation control on patterned substrates

U. Jansson, J. Carlsson, J. Greene, 1989 .

Low-Energy Accelerated-Ion Doping of Si during Molecular Beam Epitaxy: Incorporation Probabilities, Depth Distributions, and Electrical Properties

J. Knall, M. Hasan, J. Greene, 1990 .