So Tanaka

Novel Designed SiC Devices for High Power and High Efficiency Systems

K. Wada, K. Hiratsuka, Y. Mikamura, 2015, IEEE Transactions on Electron Devices.

150 A SiC V-groove trench gate MOSFET with 6 × 6 mm2 chip size on a 150 mm C-face in-house epitaxial wafer

Y. Saitoh, K. Wada, M. Sakai, 2016 .

Significant Improvement of Switching Characteristics in a 1.2‐kV SiC SWITCH‐MOS by the Application of Kelvin Source Connection

H. Yano, S. Harada, N. Iwamuro, 2022, IEEJ Transactions on Electrical and Electronic Engineering.

Demonstration of the Surge Current Capability of Embedded SBDs in SiC SBD-Integrated Trench MOSFETs with a Thick Cu Block

F. Kato, H. Yano, S. Harada, 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).