H. Bae

发表

GaInNAs(Sb) Long-Wavelength VCSELs

J. Harris, T. Sarmiento, H. Bae, 2013 .

Monolithic 1.55-μm GaInNAsSb Quantum Well Mode-Locked Lasers

S. Bank, L. Lester, J.S. Harris, 2007, 2007 Conference on Lasers and Electro-Optics (CLEO).

Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs

Lynford L. Goddard, Seth R. Bank, Mark A. Wistey, 2006 .

MBE Growth and Characterization of Long Wavelength Dilute Nitride III–V Alloys

J. Harris, S. Bank, M. Wistey, 2005 .

Long-wavelength Dilute Nitride-Antimonide Lasers

J. Harris, S. Bank, M. Wistey, 2005 .

Monolithic GaInNAsSb vertical cavity surface emitting lasers at 1534nm

S. Bank, J.S. Harris, M. Wistey, 2006, 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference.

Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb∕GaAsN∕GaAs quantum well tailored at 1.5μm: The energy level structure and the Stokes shift

J. Harris, S. Bank, J. Misiewicz, 2005 .

The Fermi level position in as‐grown GaInNAs(Sb) quantum wells and layers studied by contactless electroreflectance

J. Harris, S. Bank, J. Misiewicz, 2008 .

Nitrogen Plasma Optimization for High-Quality Dilute Nitrides

James S. Harris, Seth R. Bank, Mark A. Wistey, 2005 .

The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance

J. Harris, S. Bank, J. Misiewicz, 2007 .

Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content

J. Harris, S. Bank, J. Misiewicz, 2007 .

The role of antimony on properties of widely varying GaInNAsSb compositions

J. Harris, S. Bank, M. Wistey, 2006 .

Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 μm

J. Harris, S. Bank, M. Wistey, 2005 .

Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11∕GaAs single quantum wells

J. Harris, S. Bank, J. Misiewicz, 2005 .

Optical Gain in GaInNAs and GaInNAsSb Quantum Wells

J. Harris, P. Smowton, L. Mawst, 2011, IEEE Journal of Quantum Electronics.

GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm

James S. Harris, Lynford L. Goddard, Seth R. Bank, 2006 .

Band-gap discontinuity in GaN0.02As0.87Sb0.11∕GaAs single-quantum wells investigated by photoreflectance spectroscopy

J. Harris, S. Bank, J. Misiewicz, 2005 .

GaAs-based 1.53 μm GaInNAsSb vertical cavity surface emitting lasers

J. Harris, T. Sarmiento, T. O’Sullivan, 2009 .

Recent Progress on 1.55- $\mu{\hbox {m}}$ Dilute-Nitride Lasers

R. Kudrawiec, Hopil Bae, J.S. Harris, 2007, IEEE Journal of Quantum Electronics.

Overannealing effects in GaInNAs"Sb… alloys and their importance to laser applications

James S. Harris, Seth R. Bank, Mark A. Wistey, 2006 .

Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells

J. Harris, S. Bank, M. Wistey, 2006 .

Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

J. Harris, S. Bank, M. Wistey, 2007 .

Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes

James S. Harris, Seth R. Bank, Mark A. Wistey, 2006 .

Differential gain and non-linear gain compression of GaInNAsSb/GaAs lasers at 1.5/spl mu/m

S. Bank, M. Wistey, H. Yuen, 2005, (CLEO). Conference on Lasers and Electro-Optics, 2005..

Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 /spl mu/m

M. Wistey, H. Yuen, L. Goddard, 2004, The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004..

Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5–1.65 μm: Broadening of the fundamental transition

J. Harris, S. Bank, J. Misiewicz, 2009 .

Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers

James S. Harris, Seth R. Bank, Mark A. Wistey, 2007 .

Contactless electroreflectance of GaInNAsSb/GaAs single quantum wells with indium content of 8%-32%

J. Harris, S. Bank, J. Misiewicz, 2007 .

On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%–32%

J. Harris, S. Bank, J. Misiewicz, 2008 .

Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells

J. Harris, S. Bank, J. Misiewicz, 2007 .

Fermi level shift in GaInNAsSb∕GaAs quantum wells upon annealing studied by contactless electroreflectance

J. Harris, S. Bank, J. Misiewicz, 2007 .

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

James S. Harris, Seth R. Bank, Mark A. Wistey, 2006 .

Band gap discontinuity in Ga0.9In0.1N0.027As0.973-xSbx/GaAs single quantum wells with 0≤x<0.06 studied by contactless electroreflectance spectroscopy

J. Harris, S. Bank, J. Misiewicz, 2006 .

Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms

J. Harris, S. Bank, J. Misiewicz, 2006 .

Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 μm

J. Harris, S. Bank, J. Misiewicz, 2006 .

GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 μm

James S. Harris, Hopil Bae, Tomas Sarmiento, 2008, SPIE OPTO.

Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures

J. Harris, S. Bank, H. Yuen, 2007 .

Conduction band offset for Ga0.62In0.38NxAs0.991−xSb0.009∕GaNyAs1−y∕GaAs systems with the ground state transition at 1.5–1.65μm

J. Harris, S. Bank, J. Misiewicz, 2007 .

Effects of growth temperature on the structural and optical properties of 1.55μm GaInNAsSb quantum wells grown on GaAs

J. Harris, S. Bank, M. Wistey, 2005 .

Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy

J. Harris, S. Bank, M. Wistey, 2005 .

High-performance 1.5 [micro sign]m GaInNAsSb lasers grown on GaAs

James S. Harris, Lynford L. Goddard, Seth R. Bank, 2004 .