Ranee W. Kwong

发表

Rational design in cyclic olefin resists for sub-100-nm lithography

Hiroshi Ito, Hoa D. Truong, Robert D. Allen, 2003, SPIE Advanced Lithography.

Evolution of a 193-nm bilayer resist for manufacturing

William R. Brunsvold, Phillip J. Brock, David R. Medeiros, 2002, SPIE Advanced Lithography.

High-contrast positive resists for e-beam mask making

Hiroshi Ito, Marie Angelopoulos, Karen Petrillo, 1998, Photomask Technology.

Benzyloxypropene-protected PHS resist system for e-beam applications

Marie Angelopoulos, David R. Medeiros, Wu-Song Huang, 1999, Advanced Lithography.

High-performance 193-nm photoresist materials based on a new class of polymers containing spaced ester finctionalities

Eiichi Kobayashi, Pushkara Rao Varanasi, Margaret C. Lawson, 2003, SPIE Advanced Lithography.

Structure and property relationships of fractionated novolac resins

George M. Jordhamo, Robert D. Allen, Ranee W. Kwong, 1997, Advanced Lithography.

Photoresists using tetrahydropyranyl- and tetrahydrofuranyl-protected styrene maleic anhydride half-ester polymers

Ratnam Sooriyakumaran, Wu-Song Huang, Ranee W. Kwong, 1998, Advanced Lithography.

Acid amplifiers: proton transfer or direct acid formation

Wu-Song Huang, Ranee W. Kwong, Wayne M. Moreau, 2000, Advanced Lithography.

High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask and device making

Marie Angelopoulos, Karen Petrillo, David R. Medeiros, 2001, SPIE Advanced Lithography.

Chemically amplified negative resist for e-beam fabrication of x-ray masks

Donald K. Bailey, Ranee W. Kwong, Ahmad D. Katnani, 1994, Advanced Lithography.

Acid diffusion in a chemically amplified negative i-line photoresist

Margaret C. Lawson, Ranee W. Kwong, K. Rex Chen, 1998, Advanced Lithography.

193nm single layer photoresists: defeating tradeoffs with a new class of fluoropolymers

Wenjie Li, Takashi Chiba, Pushkara Rao Varanasi, 2005, SPIE Advanced Lithography.

Sensitivity enhancers for chemically amplified resists

William R. Brunsvold, Warren Montgomery, Ranee W. Kwong, 1990, Advanced Lithography.

Evaluation of a new environmentally stable positive tone chemically amplified deep-UV resist

Wu-Song Huang, Ranee W. Kwong, Ahmad D. Katnani, 1994, Advanced Lithography.

Impact of thin resist processes on post-etch LER

Hiroshi Ito, Martha I. Sanchez, Gregory M. Wallraff, 2003, SPIE Advanced Lithography.

CA resist with high sensitivity and sub-100-nm resolution for advanced mask and device making

John G. Hartley, Marie Angelopoulos, Wu-Song Huang, 2000, Advanced Lithography.

Extending the performance of KRS-XE for high-throughput electron-beam lithography for advanced mask making

Marie Angelopoulos, Karen Petrillo, Wenjie Li, 2002, SPIE Photomask Technology.

Process optimization of a positive-tone chemically amplified resist for 0.25-um lithography using a vector scan e-beam tool

Charles A. Sauer, Wu-Song Huang, Ranee W. Kwong, 1995, Advanced Lithography.

Method to improve setup and overlay performance on an excimer laser stepper using a unique DUV resist: KRS

Karen Petrillo, Wu-Song Huang, Ranee W. Kwong, 1997, Advanced Lithography.

CA resist with high sensitivity and sub-100-nm resolution for advanced mask making

John G. Hartley, Marie Angelopoulos, Wu-Song Huang, 2000, Photomask Japan.

Applicaton of blends and side chain Si-O copolymers as high-etch-resistant sub-100-nm e-beam resists

Marie Angelopoulos, Karen Petrillo, Qinghuang Lin, 2002, SPIE Advanced Lithography.

IBM 193-nm bilayer resist: materials, lithographic performance, and optimization

George M. Jordhamo, Phillip J. Brock, Arpan P. Mahorowala, 2001, SPIE Advanced Lithography.

Reactive ion etch studies of DUV resists

Ranee W. Kwong, Wayne M. Moreau, W. Yan, 1999, Advanced Lithography.

Highly etch-selective spin-on bottom antireflective coating for use in 193-nm lithography and beyond

Scott Halle, Marie Angelopoulos, Karen Petrillo, 2003, SPIE Advanced Lithography.

Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes

Gregg M. Gallatin, Dario L. Goldfarb, Marie Angelopoulos, 2004 .