Wenhan Zhou

发表

High-performance monolayer Na3Sb shrinking transistors: a DFT-NEGF study.

H. Zeng, Shengli Zhang, B. Cai, 2020, Nanoscale.

Ultrathin Bismuth Nanosheets for Stable Na-Ion Batteries: Clarification of Structure and Phase Transition by in Situ Observation.

H. Zeng, Kan Zhang, Chongyang Zhu, 2019, Nano letters.

CsPbBr3 Quantum Dots 2.0: Benzenesulfonic Acid Equivalent Ligand Awakens Complete Purification

H. Zeng, Dandan Yang, Shengli Zhang, 2019, Advanced materials.

Modulating tunneling width and energy window for high-on-current two-dimensional tunnel field-effect transistors

H. Zeng, Jiang Cao, Shengli Zhang, 2021 .

Design of gear-type microstrip circular antenna for orbital angular momentum generation

Shengli Zhang, Wenhan Zhou, Jia-jun Liang, 2016, 2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT).

Cobalt nanoparticles embedded in the N-doped carbon nanospheres as efficient oxygen catalysis for rechargeable flexible Zn-air batteries

Jun Liu, Hongwei Wu, Juan Gao, 2021, Journal of Nanoparticle Research.

A class of Pb-free double perovskite halide semiconductors with intrinsic ferromagnetism, large spin splitting and high Curie temperature

Jinlong Yang, H. Zeng, Shengli Zhang, 2018 .

Mechanistic Understanding of Two-Dimensional Phosphorus, Arsenic, and Antimony High-Capacity Anodes for Fast-Charging Lithium/Sodium Ion Batteries

H. Zeng, Shengli Zhang, Kan Zhang, 2018, The Journal of Physical Chemistry C.

Ballistic Transport in High-Performance and Low-Power Sub-5 nm Two-Dimensional ZrNBr MOSFETs

H. Zeng, Shengli Zhang, Wenhan Zhou, 2020, IEEE Electron Device Letters.

Highly Efficient Synthesis of Carbon-Based Molybdenum Phosphide Nanoparticles for Electrocatalytic Hydrogen Evolution

L. Cai, Qilin Huang, Wenhan Zhou, 2020, Nanoscale Research Letters.

Band engineering realized by chemical combination in 2D group VA–VA materials

H. Zeng, Kan Zhang, B. Cai, 2019, Nanoscale Horizons.

First-principles study of SO 2 sensors based on phosphorene and its isoelectronic counterparts: GeS, GeSe, SnS, SnSe

Xuhai Liu, S. Zhang, Xiufeng Song, 2017 .

Topologically protected states and half-metal behaviors: Defect-strain synergy effects in two-dimensional antimonene

H. Zeng, Jijun Zhao, Ziyu Hu, 2019, Physical Review Materials.

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

H. Zeng, Jing Lu, Yangyang Wang, 2020 .

A highly sensitive and selective SnS2 monolayer sensor in detecting SF6 decomposition gas

H. Zeng, Shengli Zhang, Xiufeng Song, 2020 .

Modulating Epitaxial Atomic Structure of Antimonene through Interface Design

H. Zeng, H. Fuchs, Kan Zhang, 2019, Advanced materials.

Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

H. Zeng, Shengli Zhang, Wenhan Zhou, 2020, Advanced Electronic Materials.

Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator.

H. Zeng, Zhongfang Chen, Shengyuan A. Yang, 2017, Nano letters.

Recent progress in 2D group IV–IV monochalcogenides: synthesis, properties and applications

Ziyu Hu, S. Zhang, Xuechao Yu, 2019, Nanotechnology.

Two-dimensional SiP: an unexplored direct band-gap semiconductor

H. Zeng, Zhen Zhu, B. Cai, 2016 .

Ultrascaled Double-Gate Monolayer SnS2 MOSFETs for High-Performance and Low-Power Applications

H. Zeng, Xuhai Liu, Shengli Zhang, 2020 .

First-principle study of puckered arsenene MOSFET

H. Zeng, Shengli Zhang, Xiufeng Song, 2020, Journal of Semiconductors.

Two-Dimensional Pnictogen for Field-Effect Transistors

H. Zeng, Shengli Zhang, Xiufeng Song, 2019, Research.

Stability enhancement and electronic tunability of two-dimensional SbIV compounds via surface functionalization

Xuhai Liu, Zhen Zhu, B. Cai, 2018 .

Electronic band structures and optical properties of atomically thin AuSe: first-principle calculations

H. Zeng, S. Zhang, Wenhan Zhou, 2019, Journal of Semiconductors.

Ultrathin tellurium dioxide: emerging direct bandgap semiconductor with high-mobility transport anisotropy.

H. Zeng, Kan Zhang, Zhen Zhu, 2018, Nanoscale.

Layer-controlled band alignment, work function and optical properties of few-layer GeSe

Xuhai Liu, S. Zhang, Xiufeng Song, 2017 .

Two-dimensional GeS with tunable electronic properties via external electric field and strain

H. Zeng, Ning Wang, Shiping Huang, 2016, Nanotechnology.

Robust two-dimensional topological insulators in derivatives of group-VA oxides with large band gap: Tunable quantum spin Hall states

H. Zeng, Shengli Zhang, B. Cai, 2019, Applied Materials Today.

DFT coupled with NEGF study of a promising two-dimensional channel material: black phosphorene-type GaTeCl.

H. Zeng, Kan Zhang, Xuhai Liu, 2018, Nanoscale.

Porous Fe-Co-P nanowire arrays through alkaline etching as self-supported electrodes for efficient hydrogen production

Hongwei Wu, Juan Gao, Wenhan Zhou, 2021, Journal of Solid State Electrochemistry.

Narrow‐Band QD‐Enhanced PIN Metal‐Oxide Heterostructure Phototransistor with the Assistance of Printing Processes

Chi Li, Hai Hu, Qing Dai, 2019, Advanced Optical Materials.

Quantum Transport in Monolayer α‐CS Field‐Effect Transistors

H. Zeng, Shengli Zhang, Xiufeng Song, 2021, Advanced Electronic Materials.

Unusual Electronic Transitions in Two-dimensional Layered SnSb2Te4 Driven by Electronic State Rehybridization

H. Zeng, Shengli Zhang, Zhen Zhu, 2019, Physical Review Applied.

Band offsets in new BN/BX (X = P, As, Sb) lateral heterostructures based on bond-orbital theory.

H. Zeng, C. Zhi, Xuhai Liu, 2018, Nanoscale.

Infrared Phototransistor Induced by MoS2 Quantum Dots Encapsulated in Lead Iodide Perovskite

W. Lei, Zhi Tao, Wenhan Zhou, 2019, IEEE Electron Device Letters.

Ballistic Quantum Transport of Sub‐10 nm 2D Sb2Te2Se Transistors

Shengli Zhang, Wenhan Zhou, Shiying Guo, 2019, Advanced Electronic Materials.

DFT coupled with NEGF study of a promising two-dimensional channel material: black phosphorene-type GaTeCl.

H. Zeng, Kan Zhang, Xuhai Liu, 2018, Nanoscale.

Ultrathin tellurium dioxide: emerging direct bandgap semiconductor with high-mobility transport anisotropy.

H. Zeng, Kan Zhang, Zhen Zhu, 2018, Nanoscale.