Qiuhui Li

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Zhiyong Zhang, Jing Lu, R. Quhe, 2021, Reports on progress in physics. Physical Society.

---

Performance Limit of Ultrathin GaAs Transistors.

R. Quhe, Jinbo Yang, Qiuhui Li, 2022, ACS applied materials & interfaces.

---

Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors

Zhiyong Zhang, Jing Lu, R. Quhe, 2021, Advanced Theory and Simulations.

---

Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

Zhiyong Zhang, Chenguang Qiu, Weijun Zhou, 2021, ACS applied materials & interfaces.

---

Sub-5 nm Gate Length Monolayer MoTe2 Transistors

Xiaotian Sun, Qiuhui Li, Jie Yang, 2021, The Journal of Physical Chemistry C.

---

Scaling Behavior of Magnetoresistance with the Layer Number in CrI3 Magnetic Tunn

R. Quhe, Jinbo Yang, Qiuhui Li, 2022, Physical Review Applied.

---

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation

Jinbo Yang, Qiuhui Li, Jie Yang, 2022, Physical Review Applied.

---

2D fin field-effect transistors

Jing Lu, R. Quhe, Qiuhui Li, 2023, Science Bulletin.

---

Sub 10 nm Bilayer Bi2O2Se Transistors

Zhiyong Zhang, Jing Lu, R. Quhe, 2019, Advanced Electronic Materials.

---

High-Performance FexGeTe2

Jie Yang, Jinbo Yang, Qiuhui Li, 2023, Physical Review Applied.

---

Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

Y. Ang, Jing Lu, R. Quhe, 2023, 2308.14045.

---

Polarization tunable bidirectional photoresponse in Van der Waals α−In2Se3

Jie Yang, K. Tang, Qiuhui Li, 2023, PHYSICAL REVIEW MATERIALS.

---

Device Performance and Strain Effect of Sub-5 nm Monolayer InP Transistors

Jie Yang, R. Quhe, Jinbo Yang, 2022, Journal of Materials Chemistry C.

---