F. Sfigakis

发表

All-electric all-semiconductor spin field-effect transistors.

H. Beere, D. Ritchie, M. Pepper, 2015, Nature nanotechnology.

Temperature dependent angular dispersions of surface acoustic waves on GaAs

Na Young Kim, F. Sfigakis, Mats Powlowski, 2019, Japanese Journal of Applied Physics.

Benefits of using undoped GaAs/AlGaAs heterostructures: A case study of the zero-bias bias anomaly in quantum wires

K. D. Gupta, D. Ritchie, M. Pepper, 2010 .

Growth variations and scattering mechanisms in metamorphic In0.75Ga0.25As/In0.75 Al0.25As quantum wells grown by molecular beam epitaxy

H. Beere, D. Ritchie, I. Farrer, 2015 .

Spin effects in one-dimensional systems

D. Ritchie, M. Pepper, C. Ford, 2008 .

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas

K. D. Gupta, H. Beere, D. Ritchie, 2011, 1112.5150.

One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure.

Hyun Ho Kim, A. W. Tsen, Bowen Yang, 2018, Nano letters.

Landau level spin diode in a GaAs two dimensional hole system

K. D. Gupta, H. Beere, D. Ritchie, 2014, 1406.3883.

Linear non-hysteretic gating of a very high density 2DEG in an undoped metal–semiconductor–metal sandwich structure

K. D. Gupta, H. Beere, D. Ritchie, 2011, 1111.4310.

Temporal characteristics of surface-acoustic-wave-driven luminescence from a lateral p-n junction

D. Ritchie, A. Shields, C. Barnes, 2007, cond-mat/0701689.

Surface-acoustic-wave-driven luminescence from a lateral p-n junction

D. Ritchie, A. Shields, C. Barnes, 2006 .

Orientation of hole quantum Hall nematic phases in an out-of-plane electric field

D. Ritchie, I. Farrer, F. Sfigakis, 2019, Physical Review B.

Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

K. D. Gupta, D. Ritchie, A. Micolich, 2012, 1204.0827.

vice on AIGaAs/GaAs Heterostructures

D. Reuter, O. Klochan, F. Sfigakis, 2010 .

Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures

K. D. Gupta, H. Beere, D. Ritchie, 2010, 1007.1019.

Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells

J. Baugh, Z. Wasilewski, G. Nichols, 2022, Applied Physics Letters.

Controlled electroplating and electromigration in nickel electrodes for nanogap formation

S. Khondaker, C. Barnes, T. Mitrelias, 2010, Nanotechnology.

Near-infrared refractive index of thick, laterally oxidized AlGaAs cladding layers

T. Tiedje, C. Nicoll, F. Sfigakis, 2000, Journal of Lightwave Technology.

Kondo effect from a tunable bound state within a quantum wire.

D. Ritchie, M. Pepper, M. Simmons, 2008, Physical Review Letters.

Quantum transport in In0.75Ga0.25As quantum wires

H. Beere, D. Ritchie, M. Pepper, 2008 .

Molecular beam epitaxy of high mobility In0.75Ga0.25As for electron spin transport applications

H. Beere, D. Ritchie, M. Pepper, 2009 .

Vortex detection and quantum transport in mesoscopic graphene Josephson-junction arrays

L. Covaci, V. Narayan, J. Griffiths, 2014, 1404.0998.

Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device

K. D. Gupta, H. Beere, D. Ritchie, 2015, 1511.08701.

Suppression of spin-splitting in Al0.33Ga0.67As/AlyGa1−yAs heterostructures with y varying from 0.10 to 0.15

D. Maude, F. Sfigakis, S. Holmes, 2007 .

Effects of biased and unbiased illuminations on two-dimensional electron gases in dopant-free GaAs/AlGaAs

H. Beere, J. Baugh, M. Pepper, 2022, Physical Review B.

Non-adiabatic single-electron pumps in a dopant-free GaAs/AlGaAs 2DEG

M. C. Tam, J. Baugh, M. Reimer, 2021, Applied Physics Letters.

N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: application to ambipolar FETs

K. D. Gupta, V. Narayan, I. Farrer, 2016 .

Demonstration and characterization of an ambipolar high mobility transistor in an undoped GaAs/AlGaAs quantum well

K. D. Gupta, H. Beere, D. Ritchie, 2013 .

Few-electrode design for silicon MOS quantum dots

J. Baugh, F. Sfigakis, E. B. Ramirez, 2018, Semiconductor Science and Technology.

Evidence of Novel Quasiparticles in a Strongly Interacting Two-Dimensional Electron System: Giant Thermopower and Metallic Behaviour

H. Beere, M. Pepper, V. Narayan, 2012, 1208.2285.

Evolution of interlayer and intralayer magnetism in three atomically thin chromium trihalides

Kai Sun, David G. Cory, Siwen Li, 2019, Proceedings of the National Academy of Sciences.

Unconventional metallicity and giant thermopower in a strongly interacting two-dimensional electron system

H. Beere, D. Ritchie, M. Pepper, 2012, 1206.1549.

Microwave spectroscopy of a carbon nanotube charge qubit

M. R. Buitelaar, M. Buitelaar, F. Sfigakis, 2017, 1706.01096.

Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs

India., Canada., London, 2020, 2012.14370.

Hillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBE

J. Baugh, Z. Wasilewski, F. Sfigakis, 2019, Journal of Crystal Growth.

Bychkov–Rashba dominated band structure in an In0.75Ga0.25As–In0.75Al0.25As device with spin-split carrier densities of <1011 cm−2

H. Beere, D. Ritchie, P. Simmonds, 2008 .

Evolution of interlayer and intralayer magnetism in three atomically thin chromium trihalides

Hyun Ho Kim, J. Shan, D. Cory, 2019, Proceedings of the National Academy of Sciences.