B. Song

发表

Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment.

D. Muller, S. Xiao, Mingda Li, 2015, Nano letters.

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Xiang Gao, Zongyang Hu, Tian Fang, 2012, IEEE Electron Device Letters.

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

Yu Cao, A. Verma, Ronghua Wang, 2013, IEEE Electron Device Letters.

Design and optimization of GaN lateral polarization-doped super-junction (LPSJ): An analytical study

D. Jena, H. Xing, K. Nomoto, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Steep Sub-Boltzmann Switching in AlGaN/GaN Phase-FETs With ALD VO2

D. Jena, H. Xing, V. Wheeler, 2018, IEEE Transactions on Electron Devices.

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

D. Jena, H. Xing, P. Fay, 2015 .

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

D. Jena, H. Xing, Pei Zhao, 2016, 1611.08914.

Electron mobility in polarization-doped Al0-0.2GaN with a low concentration near 1017 cm−3

D. Jena, H. Xing, Xiang Gao, 2017, 1704.03001.

Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs

D. Jena, H. Xing, Zongyang Hu, 2014 .

Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts

Yu Cao, D. Jena, H. Xing, 2016, IEEE Electron Device Letters.

Evolution of strain in aluminum gallium nitride/gallium nitride high electron mobility transistors under on-state bias

H. Xing, M. Taheri, Q. Qiao, 2013 .

High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

D. Jena, H. Xing, P. Fay, 2015, 2015 73rd Annual Device Research Conference (DRC).

Comparing buffer leakage in PolarMOSH on SiC and free-standing GaN substrates

D. Jena, H. Xing, Xiang Gao, 2016, 2016 Lester Eastman Conference (LEC).

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

D. Jena, H. Xing, V. Protasenko, 2015, 1502.00072.

Demonstration of GaN HyperFETs with ALD VO2

D. Meyer, D. Jena, H. Xing, 2016, 2016 74th Annual Device Research Conference (DRC).

GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

Huili Grace Xing, Kazuki Nomoto, T. Mishima, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Investigation of forward transient characteristics of vertical GaN-on-GaN p-n diodes

J. Liou, H. Xing, J. Salcedo, 2016, 2016 IEEE International Nanoelectronics Conference (INEC).

1.7-kV and 0.55- $\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Huili Grace Xing, Kazuki Nomoto, Zongyang Hu, 2016, IEEE Electron Device Letters.

Vertical Ga2O3 Schottky barrier diodes on single-crystal β-Ga2O3 (−201) substrates

D. Jena, H. Xing, A. Verma, 2016, 2016 74th Annual Device Research Conference (DRC).

Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits

D. Jena, H. Xing, M. Qi, 2015, 2015 73rd Annual Device Research Conference (DRC).

Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz

Xiang Gao, P. Saunier, A. Ketterson, 2013, IEEE Electron Device Letters.

THz devices based on 2D electron systems

Huili Grace Xing, Debdeep Jena, Bo Song, 2015, Defense + Security Symposium.

GaN lateral PolarSJs: Polarization-doped super junctions

D. Jena, H. Xing, Zongyang Hu, 2014, Device Research Conference.

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

E. Beam, D. Jena, H. Xing, 2014, IEEE Transactions on Electron Devices.

Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation

Huili Grace Xing, Ronghua Wang, O. Laboutin, 2013, 2013 IEEE International Electron Devices Meeting.

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

G. Snider, D. Jena, H. Xing, 2013 .

Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

Yu Cao, Zongyang Hu, Ronghua Wang, 2013, IEEE Electron Device Letters.

Monolithically integrated E/D-mode InAlN HEMTs with ƒt/ƒmax > 200/220 GHz

E. Beam, D. Jena, H. Xing, 2012, Device Research Conference.

Source-drain distance scaling and its effect on fringing capacitance in ultra-high speed GaN HEMTs

E. Beam, D. Jena, H. Xing, 2013 .

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

D. Jena, H. Xing, V. Protasenko, 2014 .

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Yu Cao, Huili Grace Xing, Kazuki Nomoto, 2015, IEEE Electron Device Letters.

First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC

D. Jena, H. Xing, P. Fay, 2016, Device Research Conference.

AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz

D. Jena, H. Xing, W. Hwang, 2014 .

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Zexuan Zhang, D. Jena, H. Xing, 2022, Applied Physics Letters.

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Huili Grace Xing, Xiang Gao, Kazuki Nomoto, 2015 .

Electron mobility in polarization-doped Al0-0.2GaN with a low concentration near 1017 cm−3

D. Jena, H. Xing, Xiang Gao, 2017, 1704.03001.

Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases

Huili Grace Xing, Patrick Fay, Berardi Sensale-Rodriguez, 2014 .