Rui Li

Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V

A. Seabaugh, J. Kuo, H. Xing, 2012, 2012 International Electron Devices Meeting.

Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

Rui Li, Chen Chen, Qin Zhang, 2011, IEEE Electron Device Letters.

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

P. Fay, Qin Zhang, A. Seabaugh, 2012, IEEE Electron Device Letters.