A. Fily

Brightness Scaling of High Power Laser Diode Bars

N. Lichtenstein, S. Weiss, Y. Manz, 2007, 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference.

1 Watt 14xy InGaAsP/InP ridge waveguide pump laser diodes with low vertical farfield and high efficiency

C. Harder, N. Zayer, N. Lichtenstein, 2003, OFC 2003 Optical Fiber Communications Conference, 2003..

Indium surface segregation in strained GaInAs quantum wells grown on (1̄ 1̄ 1̄) GaAs substrates by MBE

J. Nagle, J. Olivier, S. Collin, 1999 .

Chemical beam epitaxy growth of tensile-strained GaAsP/GaAlAs quantum well heterostructures for laser application

J. C. Garcia, J. Massies, M. Leroux, 1997 .

High temperature and high peak-power 808nm QCW bars and stacks

S. D. McDougall, B. Qiu, G. Bacchin, 2010, LASE.

Local channel temperature measurements on pseudomorphic high electron mobility transistors by photoluminescence spectroscopy

J. P. Landesman, P. Braun, A. Fily, 1998 .

A new method for temperature mapping on GaAs field effect transistors

E. Martin, J. P. Landesman, P. Braun, 1998 .