T. Fujimori

Reliability improvement of 980 nm laser diodes with a new facet passivation process

H. Horie, H. Ohta, T. Fujimori, 1998, Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130).

Weakly Index Guided Buried-Stripe Type 980 nm Laser Diodes Grown by a Combination of Gas Source Molecular Beam Epitaxy and Metalorganic Vapor Phase Epitaxy with an AlGaAs/InGaP/GaAs Double Etch Stop Structure

K. Shimoyama, S. Nagao, H. Horie, 1999 .

Layer-by-layer growth mechanism of AlxGa1-xP grown by gas-source MBE

H. Gotoh, S. Nagao, T. Fujimori, 1993 .

Radiative decay in type-II GaP/AlP/GaP quantum wells

H. Gotoh, Hiroshi Ito, K. Fujii, 1997 .

Type-II photoluminescence from GaP/AlP/GaP quantum wells

H. Gotoh, Hiroshi Ito, S. Koshihara, 1997 .

Reliability improvement of 980-nm laser diodes with a new facet passivation process

T. Fujimori, Hideyoshi Horie, H. Horie, 1999 .