J. Fricke

发表

650-nm InGaP Broad Area Lasers With 5000-h Reliable Operation at 600 mW

B. Sumpf, M. Weyers, M. Zorn, 2007, IEEE Photonics Technology Letters.

Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers

P. Leisher, P. Crump, R. Deri, 2020 .

Novel 1064 nm DBR lasers combining active layer removal and surface gratings

A. Wicht, O. Brox, A. Maassdorf, 2021, Electronics Letters.

Coherent beam combining progress on diode lasers and tapered amplifiers at 808 nm

G. Tränkle, K. Paschke, G. Blume, 2022, LASE.

Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1.2-W continuous-wave operation at 735 nm

B. Sumpf, G. Trankle, A. Knauer, 2001, IEEE Photonics Technology Letters.

High-power, spectrally stabilized, near-diffraction-limited 970 nm laser light source based on truncated-tapered semiconductor optical amplifiers with low confinement factors

G. Tränkle, Paul Crump, Bernd Eppich, 2012 .

100,000 h estimated lifetime of 100-μm-stripe width 650 nm broad area lasers at an output power of 1.2 W

G. Tränkle, Bernd Sumpf, Götz Erbert, 2012, OPTO.

1060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality

P. Adamiec, G. Tränkle, Bernd Sumpf, 2009, OPTO.

High power single mode 980nm DBR tapered diode lasers with integrated sixth order surface gratings based on simplified fabrication process

Katrin Paschke, Götz Erbert, J. Behrendt, 2006, SPIE Photonics Europe.

Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm

Andrea Knigge, Andreas Klehr, Günther Tränkle, 2018, OPTO.

High-power broad-area 808 nm DFB lasers for pumping solid state lasers

G. Tränkle, Andreas Klehr, Frank Bugge, 2006, SPIE OPTO.

Improving the modulation efficiency of high-power distributed Bragg reflector tapered diode lasers

P. Adamiec, G. Tränkle, Bernd Sumpf, 2011 .

Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers

Andreas Klehr, Hans Wenzel, Götz Erbert, 2012 .

980-nm DBR lasers using higher order gratings defined by i-line lithography

Andreas Klehr, Hans Wenzel, Götz Erbert, 2005 .

High-power 980 nm quantum dot broad area lasers

Johann Peter Reithmaier, Bernd Sumpf, Günther Tränkle, 2003 .

Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers

G. Tränkle, P. Leisher, P. Crump, 2022, OPTO.

High-power ridge-wavequide broad-area lasers with a DFB resonator in the wavelength range 760- to 790-nm

Andreas Klehr, Frank Bugge, M. Braun, 2005, SPIE OPTO.

Generation of picosecond pulses and optical frequency combs with multi-section 1065nm ridge waveguide diode lasers

G. Tränkle, Andreas Klehr, Armin Liero, 2012, OPTO.

Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization

Andreas Klehr, Olaf Brox, Götz Erbert, 2013 .

Conductively Cooled 637-nm InGaP Broad-Area Lasers and Laser Bars With Conversion Efficiencies Up to 37% and a Small Vertical Far Field of 30$^{\circ}$

M. Weyers, K. Paschke, B. Sumpf, 2008, IEEE Photonics Technology Letters.

Influence of lateral patterning geometry on lateral carrier confinement in strain-modulated InGaAs-nanostructures

U. Zeimer, G. Tränkle, U. Pietsch, 2003 .

Optimised two layer overgrowth of a lateral strain-modulated nanostructure

U. Zeimer, U. Pietsch, J. Grenzer, 2005 .

3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

B. Sumpf, K. Paschke, M. Weyers, 2006, IEEE Journal of Selected Topics in Quantum Electronics.

High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths

Paul Crump, Bernd Sumpf, Olaf Brox, 2012 .