W. Hirasawa

High performance RF power LDMOSFETs for cellular handsets formed in thick-strained-Si/relaxed-SiGe structure

S. Kamohara, N. Sugii, S. Kimura, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Strained-silicon MOSFETs for analog applications: utilizing a supercritical-thickness strained Layer for low leakage current and high breakdown Voltage

Y. Hoshino, Y. Kondo, N. Sugii, 2006, IEEE Transactions on Electron Devices.

Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets

S. Kamohara, N. Sugii, S. Kimura, 2006, IEEE Transactions on Electron Devices.

Generation of misfit dislocations and stacking faults in supercritical thickness strained-Si∕SiGe heterostructures

N. Sugii, S. Kimura, W. Hirasawa, 2006 .