Y. Kimura

发表

High performance RF power LDMOSFETs for cellular handsets formed in thick-strained-Si/relaxed-SiGe structure

S. Kamohara, N. Sugii, S. Kimura, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Strained-silicon MOSFETs for analog applications: utilizing a supercritical-thickness strained Layer for low leakage current and high breakdown Voltage

Y. Hoshino, Y. Kondo, N. Sugii, 2006, IEEE Transactions on Electron Devices.

High electron mobility in strained Si channel of heterostructure with abrupt interface

K. Nakagawa, N. Sugii, S. Yamaguchi, 1998 .

Modeling of local dielectric charging induced by line scan during SEM observation

H. Shinada, Y. Kimura, Zhouyueyang Cheng, 2015 .

P‐50: Distinguished Poster Paper: Arrays of Large Si Grains Grown at Room Temperature for x‐Si TFTS

M. Matsumura, H. Ogawa, Y. Kimura, 2004 .

Importance of Pure Si Films in Pulsed-Laser-Induced Lateral Growth

M. Matsumura, H. Ogawa, Y. Kimura, 2006 .

Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets

S. Kamohara, N. Sugii, S. Kimura, 2006, IEEE Transactions on Electron Devices.

Optimum Light Intensity Distribution for Growing Large Si Grains by Phase-Modulated Excimer-Laser Annealing

Masayuki Jyumonji, Masakiyo Matsumura, Masato Hiramatsu, 2004 .

Effects of Light Intensity Distribution on Phase Modulated Excimer Laser Crystallization Characteristics

M. Matsumura, Y. Kimura, Masato Hiramatsu, 2004 .

Polymer Adsorption Effects on Structures and Rheological Properties of Silica Suspensions

M. Kawaguchi, S. Funahashi, Y. Kimura, 1995 .

Compatibility between carbon fibre and binary aluminium alloys

Tomoo Suzuki, Y. Mishima, S. Umekawa, 1984 .

Surfactant epitaxy of Si on Si(111) surface mediated by a Sn layer II. Critical step flow of the growth with and without mediate

K. Takayanagi, Y. Kimura, S. Iwanari, 1992 .

In situ high-temperature STM study of the restructuring process on the Si(111)7×7 surface upon Ag deposition

K. Takayanagi, Y. Kimura, A. Shibata, 1994 .

On the restructured layer of the Si(111)3 × 3-Ag structure studied by scanning tunneling microscopy

K. Takayanagi, Y. Kimura, A. Shibata, 1992 .

Suppression of Ge surface segregation during Si molecular beam epitaxy by atomic and molecular hydrogen irradiation

K. Nakagawa, Y. Kimura, A. Nishida, 1995 .

Si(111)√3 × √3-Au growing on a 7 × 7 surface

K. Takayanagi, Y. Kimura, A. Shibata, 1992 .

Freezing of the 2 × 1 structure at commensurate Ag(100)Si(100) interface

K. Takayanagi, Y. Kimura, 1992 .

Restructuring process of the Si(111) surface upon Ag deposition studied by in situ high‐temperature scanning tunneling microscopy

K. Takayanagi, Y. Kimura, A. Shibata, 1994 .

The effect of surface segregation on the light-emission intensity of Si/SiGe/Si heterostructures

K. Nakagawa, M. Miyao, Y. Kimura, 1998 .

Modification of desorption phenomenon of Sb on Si surfaces by atomic hydrogen termination

K. Nakagawa, M. Miyao, Y. Kimura, 1996 .

Generation of misfit dislocations and stacking faults in supercritical thickness strained-Si∕SiGe heterostructures

N. Sugii, S. Kimura, W. Hirasawa, 2006 .

Incommensurate phase of Sn/Si(100) studied by HR-REM

K. Takayanagi, Y. Kimura, 1993 .

Analysis of charging effects on highly resistive materials under electron irradiation by using transient-absorbed-current method

Hiroshi Makino, Hiroyuki Shinada, Hiroya Ohta, 2011 .

Local-symmetry effect on light emissivity from SiGe quantum wells

K. Nakagawa, M. Hirao, M. Miyao, 1997 .

Ultrahigh Electron Mobilities in Si1-xGex/Si/Si1-xGex Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy

Nobuyuki Sugii, Shinya Yamaguchi, Masanobu Miyao, 1998 .