Jie Fan

发表

A large-signal Pspice modeling of GaN-based MIS-HEMTs

W. Luo, Xiao-hua Ma, Sen Huang, 2019, Superlattices and Microstructures.

Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier

Sen Huang, Xinyu Liu, Xinhua Wang, 2021, IEEE Transactions on Electron Devices.

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

Kevin J. Chen, Sen Huang, Xinyu Liu, 2018, IEEE Transactions on Electron Devices.

Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess

Xinyu Liu, Sen Huang, Q. Jiang, 2021, Journal of Semiconductors.

Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates

Kevin J. Chen, Sen Huang, Shu Yang, 2019, Applied Physics Express.

Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure

Sen Huang, Xinyu Liu, Xinhua Wang, 2021, IEEE Transactions on Electron Devices.

Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

Sen Huang, Xinyu Liu, Xinhua Wang, 2021 .

Room Temperature GaN-Si Bonding via an Intermediate Atomic-Layer-Deposition Al2O3 Layer by Using O Ion Beam

Shengli Zhu, Sen Huang, Xinyu Liu, 2019, 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).

Investigation of Dynamic-QGD on Enhancement-Mode AlGaN/GaN MIS-HEMTs with SiNx Passivation Dielectric

Xinyu Liu, Sen Huang, Q. Jiang, 2022, International Symposium on Power Semiconductor Devices and IC's.

Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors

Kevin J. Chen, Xinyu Liu, Sen Huang, 2019, Journal of Applied Physics.

Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

Xinyu Liu, Sen Huang, Q. Jiang, 2022, Journal of Semiconductors.

Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures

Sen Huang, Wenwu Wang, Xinyu Liu, 2021 .

Interface charge engineering in down-scaled AlGaN (<6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs

Sen Huang, Xinyu Liu, Xinhua Wang, 2020 .

Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiNx Passivation

Xinyu Liu, Sen Huang, Q. Jiang, 2022, IEEE Transactions on Electron Devices.

Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing.

Sen Huang, Wenwu Wang, Xuebang Wu, 2021, ACS applied materials & interfaces.

Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking

Sen Huang, Shu Yang, Xinyu Liu, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Xinyu Liu, Sen Huang, Q. Jiang, 2023, Applied Surface Science.

Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal-Insulator-Semiconductor Electronic Devices.

Xinyu Liu, Sen Huang, Q. Jiang, 2023, ACS applied materials & interfaces.

Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

Xinyu Liu, Sen Huang, Q. Jiang, 2022, IEEE Electron Device Letters.

High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer

Q. Jiang, Xinhua Wang, K. Wei, 2024, IEEE Electron Device Letters.

Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS

Sen Huang, Shu Yang, Wenwu Wang, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).