L. Pang

High-$f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ Passivation

Kevin J. Chen, Sen Huang, Q. Jiang, 2014, IEEE Electron Device Letters.

Electric field dependent drain current drift of AlGaN/GaN HEMT

W. Luo, Sen Huang, Xinyu Liu, 2013, 2013 IEEE International Integrated Reliability Workshop Final Report.

Comparative Study of AlGaN / GaN HEMTs with LPCVD-and PECVD-SiN x Passivation

Weijun, Sen Huang, Junfeng Li, 2014 .

AlGaN/GaN Based Diodes for Liquid Sensing

W. Luo, Xinyu Liu, L. Pang, 2013 .

Degradation of GaN high-electron mobility transistors in voltage step stress

W. Luo, Xinyu Liu, Xinhua Wang, 2012, 2012 IEEE International Integrated Reliability Workshop Final Report.

High voltage degradation of GaN high electron mobility transistors with AlGaN back barrier on SiC substrate

W. Luo, Xinyu Liu, Xinhua Wang, 2012, The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology.

Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

Xinyu Liu, Xinhua Wang, L. Pang, 2012, The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology.

Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer

W. Luo, Sen Huang, Junfeng Li, 2015, IEEE Electron Device Letters.

SEMICONDUCTOR DEVICES: Noise performance in AlGaN/GaN HEMTs under high drain bias

Pu Yan, Lei Pang, Jian Liu, 2009 .

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

Xiao-hua Ma, Xinyu Liu, Xinhua Wang, 2015 .