Yuanyuan Shi

发表

A Novel Kilovolts GaN Vertical Superjunction MOSFET With Trench Gate: Approach for Device Design and Optimization

Qi Zhou, D. Wei, Wanjun Chen, 2019, IEEE Journal of Emerging and Selected Topics in Power Electronics.

Carrier Transport Mechanisms Underlying the Bidirectional ${V}_{\mathrm{{TH}}}$ Shift in p-GaN Gate HEMTs Under Forward Gate Stress

B. Zhang, Bo Zhang, Qi Zhou, 2019, IEEE Transactions on Electron Devices.

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

Qi Zhou, D. Wei, Changxu Dong, 2017 .

A variable nanotrench structure for electric field modulation in AlGaN/GaN devices

B. Zhang, Bo Zhang, Zhaoji Li, 2019, Japanese Journal of Applied Physics.

Observation of self-recoverable gate degradation in p-GaN AlGaN/GaN HEMTs after long-term forward gate stress: The trapping & detrapping dynamics of hole/electron

Bo Zhang, Xin Ming, Zhaoji Li, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode

Chao Yang, Bo Zhang, Zhaoji Li, 2019, Nanoscale Research Letters.

AlGaN/GaN Lateral CRDs With Hybrid Trench Cathodes

Bo Zhang, Zhaoji Li, Qi Zhou, 2018, IEEE Transactions on Electron Devices.

A novel AlGaN/GaN hybrid-anode current regulating diode (CRD) with step-graded Schottky-Ohmic cathode

Qi Zhou, D. Wei, Changxu Dong, 2018, Superlattices and Microstructures.

High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

Bo Zhang, Bowen Chen, Qi Zhou, 2015, IEEE Electron Device Letters.

Novel AlGaN/GaN SBDs with nanoscale multi-channel for gradient 2DEG modulation

Tong Liu, Chao Yang, Zhaoji Li, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

0.3 VT/1.1 kV AlGaN/GaN lateral power diode with MIS-gated hybrid anode on silicon substrate

Bo Zhang, Qi Zhou, Wanjun Chen, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection

Qi Zhou, B. Zhang, A. Zhang, 2015 .

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

Zhaoji Li, Qi Zhou, Wanjun Chen, 2017, Nanoscale Research Letters.

Enhancement-mode AlGaN/GaN HFET with buried-junction-barrier for breakdown improvement and threshold-voltage modulation

Qi Zhou, D. Wei, Changxu Dong, 2018, Superlattices and Microstructures.

High performance AlGaN/GaN power diode with edge-terminated hybrid anode

B. Zhang, Bo Zhang, Qi Zhou, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Vertical GaN Power Transistor With Intrinsic Reverse Conduction and Low Gate Charge for High-Performance Power Conversion

Qi Zhou, D. Wei, Wanjun Chen, 2019, IEEE Journal of Emerging and Selected Topics in Power Electronics.

Intranasal delivery of replicating mRNA encoding hACE2-targeting antibody against SARS-CoV-2 Omicron infection in the hamster

Yuanyuan Shi, B. Zhu, Jing Wang, 2022, Antiviral Research.

Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection

Qi Zhou, Qian Cheng, Wanjun Chen, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg

I. Radu, S. Sutar, Q. Smets, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering

Bo Zhang, Bowen Chen, Qi Zhou, 2016, IEEE Electron Device Letters.