A. Bastard

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

A. Toffoli, O. Cueto, A. Roule, 2010, IEEE Electron Device Letters.

Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications

A. Toffoli, A. Roule, S. Maitrejean, 2011 .

Carbon-doped GeTe: A promising material for Phase-Change Memories

G. Reimbold, Sylvain Maitrejean, D. Blachier, 2011 .

Study of Ge 2 Sb 2 Te 5 , GeTe and N-doped GeTe for application in the Phase-Change Random Access Memories ( PCRAM )

J. Rocherullé, A. Bastard, J. Bastien, 2010 .

N-doped GeTe as performance booster for embedded Phase-Change Memories

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 International Electron Devices Meeting.

On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 IEEE International Memory Workshop.