M. Agostinelli

A 32nm low power RF CMOS SOC technology featuring high-k/metal gate

J. Rizk, K. Soumyanath, P. VanDerVoorn, 2010, 2010 Symposium on VLSI Technology.

Reliability studies of a 32nm System-on-Chip (SoC) platform technology with 2nd generation high-k/metal gate transistors

M. Agostinelli, G. Curello, H. Deshpande, 2011, 2011 International Reliability Physics Symposium.

Transistor aging and reliability in 14nm tri-gate technology

M. Agostinelli, S. Natarajan, S. Ramey, 2015, 2015 IEEE International Reliability Physics Symposium.

RF CMOS technology scaling in High-k/metal gate era for RF SoC (system-on-chip) applications

J. Rizk, K. Soumyanath, P. VanDerVoorn, 2010, 2010 International Electron Devices Meeting.

6-T cell circuit dependent GOX SBD model for accurate prediction of observed vccmin test voltage dependency

M. Agostinelli, S. Gupta, S. Pae, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

PMOS NBTI-induced circuit mismatch in advanced technologies

M. Agostinelli, S. Jacobs, S. Pae, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

PMOS thin gate oxide recovery upon negative bias temperature stress

Sangwoo Pae, M. Agostinelli, M.S. Akbar, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Self-heat reliability considerations on Intel's 22nm Tri-Gate technology

S. Natarajan, M. Agostinelli, C. Tsai, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Erratic fluctuations of sram cache vmin at the 90nm process technology node

J. Jopling, M. Jones, M. Agostinelli, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Effects of Hot Carrier Stress on Reliability of Strained-Si Mosfets

M. Agostinelli, C. Prasad, S. Dey, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Dielectric breakdown in a 45 nm high-k/metal gate process technology

J. Jopling, M. Agostinelli, C. Prasad, 2008, 2008 IEEE International Reliability Physics Symposium.

Low-k interconnect stack with multi-layer air gap and tri-metal-insulator-metal capacitors for 14nm high volume manufacturing

S. Natarajan, S. Sivakumar, M. Agostinelli, 2015, 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).

PMOS NBTI-induced circuit mismatch in advanced technologies

M. Agostinelli, S. Jacobs, S. Pae, 2004 .