H. Saito

Wavelength modulation over 500 kHz of micromechanically tunable InP-based VCSELs with Si-MEMS technology

N. Nishiyama, T. Hirata, T. Yano, 2009, 2008 IEEE 21st International Semiconductor Laser Conference.

Wavelength modulation over 500 kHz of micromechanically tunable InP-based VCSELs with Si-MEMS technology

N. Nishiyama, T. Hirata, T. Yano, 2009, 2008 IEEE 21st International Semiconductor Laser Conference.

Device characteristics of GaAlAs buried-multiquantum-well lasers fabricated by Zn-diffusion-induced disordering

T. Kuroda, Keisuke L. I. Kobayashi, H. Saito, 1985 .

Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix

Xiaodong Wang, A. Yoshikawa, S. Che, 2008 .

Cathodoluminescence Study on Spatial Luminescence Properties of InN/GaN Multiple Quantum Wells Consisting of 1-Monolayer-Thick InN Wells/GaN Matrix

Xiaodong Wang, A. Yoshikawa, S. Che, 2008 .

Fundamental Properties of Wide Bandgap Semiconductors

I. Suemune, H. Amano, K. Hiramatsu, 2007 .

Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

Akihiko Yoshikawa, Xiaodong Wang, Xiaodong Wang, 2007 .

Low threshold current GaInAsP/InP DFB lasers

Y. Tohmori, Yoshio Itaya, G. Motosugi, 1987 .