J. Song

发表

Photoluminescence Characterization of Vertically Coupled Low Density InGaAs Quantum Dots for the application to Quantum Information Processing Devices

S. Ha, J. Song, J. Song, 2015 .

The effect of post‐growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy

J. D. Lee, J. S. Kim, P. Moon, 2012, 1208.4408.

Growth of catalyst-free GaAs nanowire with As pulse injection for full zinc-blende structure

M. H. Bae, Sang-Hyuck Kim, J. Song, 2014 .

Thermal conductivity of IPA-CuCl 3 : Evidence for ballistic magnon transport and the limited applicability of the Bose-Einstein condensation model

X. G. Liu, X. Zhao, X. Sun, 2015, 1504.01465.

Dielectric functions and interband transitions of InxAl1 - xP alloys

Tae Jung Kim, Young Dong Kim, J. S. Byun, 2014 .

Magnetic property (Tc ∼ 300 K) originated from InZnP:Ag nano-rods fabricated with noble metal Ag using ion milling method

Hyungsang Kim, H. Im, T. Kang, 2017 .

Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

J. Song, Junghun Lee, Y. J. Park, 2007 .

Optical characterization of digital alloy In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-wells grown by molecular beam epitaxy

Jong Min Kim, Yong-Tak Lee, J. Song, 2006 .

Digital Alloy InGaAs/InAlAs Laser Structures Studied by Cross‐Sectional Scanning Tunneling Micropscopy

M. Beck, J. Faist, P. Offermans, 2003 .

Parametric study on optical properties of digital-alloy In(Ga1−zAlz)As/InP grown by molecular-beam epitaxy

I. Han, Jong Min Kim, Yong-Tak Lee, 2004 .

Optical properties of digital-alloy In0.49(Ga1−zAlz)0.51P/GaAs and InGaP/In0.49(Ga1−zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy

Yong-Tak Lee, Y. T. Lee, J. Song, 2005 .

Intermixing behavior in InGaAs/InGaAsP multiple quantum wells with dielectric and InGaAs capping layers

Y. T. Lee, Hye Jin Lim, J. Yu, 2001 .

New optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with Cr

C. Yoon, T. Kang, H. Koo, 2014 .

Theoretical Study for the ITO/Si based High Contrast Grating Structure with Focusing Capability and its Fabrication

Y. D. Kim, T. J. Kim, W. Cho, 2015 .

Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells electroabsorption modulator structure

Y. T. Lee, J. Yu, J. Song, 2005 .

Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer

W. Choi, J. Song, Y. Jang, 2013 .

Effect of InxGa1−xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots

I. Han, C. Park, W. Choi, 2005 .

Excited exciton and biexciton localised states in a single quantum ring

K. Kyhm, A. Nicolet, G. Nogues, 2013, 1309.5741.

Effect of growth parameters on the formation of three‐dimensional InAs islands on (001) silicon substrate

H. Yang, J. Song, W. Choi, 2010 .

Observation of new critical point in InxAl1 xAs alloy using spectroscopic ellipsometry

J. S. Byun, Y. D. Kim, Y. Chang, 2009 .

Coherent frequency-conversion of quantum dot photons to the telecommunication C-band for quantum communication applications

A. Kar, B. Gerardot, A. Fedrizzi, 2021, 2021 Conference on Lasers and Electro-Optics (CLEO).

Optical properties of AlAsxSb1−x alloys determined by in situ ellipsometry

Tae Jung Kim, Yia-Chung Chang, Yup Kim, 2013 .

Dielectric functions and interband transitions of In1-XAlXSb alloys

Tae Jung Kim, Y. D. Kim, D. Aspnes, 2010 .