C. Harrison

Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

M. S. Skolnick, M. Hopkinson, Huiyun Liu, 2003 .

Temperature dependence of avalanche multiplication in submicron Al0.6Ga0.4As diodes

M. Hopkinson, J. David, G. Rees, 2002 .

Temperature dependence of breakdown voltage in AlxGa1−xAs

J. David, C. Groves, G. Rees, 2004 .

Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity

M. S. Skolnick, M. Hopkinson, Huiyun Liu, 2003 .

High pressure study of BaFe2As2—the role of hydrostaticity and uniaxial stress

X. H. Chen, X. F. Wang, P. G. Niklowitz, 2009, Journal of physics. Condensed matter : an Institute of Physics journal.

Laterally modulated 2D electron system in the extreme quantum limit.

M. Berciu, Chenggang Zhou, P. Chaikin, 2003, Physical review letters.

High pressure study of magnetic quantum phase transitions in transition metal materials

C. Harrison, 2013 .

Low-power microwave-generated helium microplasma for molecular and atomic spectrometry

J. Hopwood, C. Harrison, A. Hoskinson, 2011 .

Negative temperature dependence of electron multiplication in In0.53Ga0.47As

J. David, P. Houston, C. Harrison, 2003 .

Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes

Tao Wang, John P. R. David, Jin-Ping Ao, 2005 .