W. Han

发表

Shallow ohmic contact to both n‐ and p‐GaAs

Yicheng Lu, M. Cole, K. Jones, 1993 .

Metallurgical interactions at the contacts GaAs interface

M. Cole, L. Casas, W. Han, 2006 .

THE MECHANISMS OF FORMATION OF OHMIC CONTACTS TO ALGAAS : A MICROSTRUCTURAL, ELEMENTAL DIFFUSION AND ELECTRICAL INVESTIGATION

M. Cole, L. Casas, W. Han, 1996 .

The Effects of Thermal Processing on Interfacial Microstructure for Thin Multilayered Metal Ohmic Contacts to p+-AlGaAs

M. Cole, W. Han, K. A. Jones, 1995 .

A materials study of PtTiGePd ohmic contacts to p + -AlGaAs as a function of annealing temperature

M. Cole, K. Jones, L. Casas, 1995 .

Ohmic Contacts To p+-GaAs and Al0.26Ga0.74As

Yicheng Lu, M. Cole, K. Jones, 1994 .

Microstructure and contact-resistance temperature dependence of Pt/Ti/Ge/Pd ohmic contacts to GaAs

M. Cole, L. Casas, W. Han, 1994 .

Comparison of PdGeTiPt and NiGeAu ohmic contacts to n-GaAs and PdGeTiPt and TiPd contacts to p+-GaAs

K. Hilton, K. Jones, M. Cole, 1997 .

Thermal stability of W ohmic contacts to n‐type GaN

F. Ren, S. Pearton, Yicheng Lu, 1996 .

Annealing effects on heavily carbon‐doped GaAs

Yicheng Lu, M. Cole, W. Han, 1992 .

Absence of localized $5d^1$ electrons in KTaO$_3$ interface superconductors

C. Zou, Yanwu Xie, M. M. Sala, 2023, 2303.01811.

Effects of annealing conditions on heavily carbon‐doped InGaAs

Yicheng Lu, J. Flemish, W. Han, 1993 .