K. Matsushita

An X-band 250W solid-state power amplifier using GaN power HEMTs

K. Kanto, A. Satomi, Y. Asahi, 2008, 2008 IEEE Radio and Wireless Symposium.

Diffusion Bonding of Tungsten to Copper.

Takehiko Watanabe, O. Ohashi, K. Matsushita, 1998 .

Effects of Field Plate and Epitaxial Wafer on AlGaN/GaN HEMTs with Active Harmonic Tuning

K. Matsushita, H. Sakurai, Aki Miyao, 2013 .

Developing GaN HEMTs for high efficiency

Y. Takada, K. Tsuda, H. Kawasaki, 2011, 2011 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications.

Effects of via layout on AlGaN/GaN HEMTs at Ka-band

Y. Takada, K. Tsuda, H. Kawasaki, 2011 .

GaN HEMTs with pre-match for Ka-band with 18W

Y. Takada, K. Tsuda, H. Kawasaki, 2011, 2011 IEEE MTT-S International Microwave Symposium.

Numerical Device Model for Reliable AlGaN/GaN HEMT Structure Design Based on Shear Stress

K. Tsuda, K. Matsushita, K. Takagi, 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Low-Damage SF6 Plasma-Etching Condition for Planar GaN HEMTs

H. Kawasaki, K. Matsushita, JeoungChill Shim, 2009 .

Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band Applications

Cheng-Kuo Lin, Yu-Syuan Lin, K. Matsushita, 2022, 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Ku-band AlGaN/GaN HEMT with over 30W

K. Takagi, Y. Kashiwabara, H. Kawasaki, 2007, 2007 European Microwave Integrated Circuit Conference.

X-band AlGaN/GaN HEMT with over 80W Output Power

K. Takagi, Y. Kashiwabara, H. Kawasaki, 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.