P. Kotara

Techniques towards GaN power transistors with improved high voltage dynamic switching properties

Eldad Bahat Treidel, M. Weyers, J. Wurfl, 2013, 2013 IEEE International Electron Devices Meeting.

Normally-off GaN Transistors for Power Applications

Eldad Bahat Treidel, A. Knauer, O. Hilt, 2014 .

Enhancement of channel conductivity in AlGaN/GaN heterostructure field effect transistors by AlGaN:Si back barrier

M. Weyers, F. Brunner, J. Würfl, 2011 .

Breakdown and dynamic effects in GaN power switching devices

Eldad Bahat Treidel, M. Weyers, O. Hilt, 2013 .

Vertical Blocking Voltage Improvement of GaN HEMT Structures on n-SiC by Pre-Epitaxial Substrate Implantation

Eldad Bahat Treidel, O. Hilt, A. Thies, 2013 .

Normally-Off GaN Transistors for Power Switching Applications

Eldad Bahat Treidel, A. Knauer, O. Hilt, 2013 .

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

Frank Brunner, Joachim Wurfl, Arne Knauer, 2013, IEEE Transactions on Electron Devices.